Semiconductor package and method of fabricating the same

1. A method of fabricating a semiconductor package, the method comprising:

preparing an interface chip;

preparing a memory chip;

stacking the interface chip on a printed circuit board (PCB); and

stacking the memory chip on the interface chip via a non-conductive film (NCF) by using a temperature-compression bonding (TCB) method,

wherein the interface chip comprises a first test pad provided in an outer portion, a bump pad provided inside the first test pad, and a first TSV provided between the first test pad and the bump pad,

the memory chip comprises a second test pad provided in an outer portion, a dummy pad provided inside the second test pad, and a second TSV provided between the second test pad and the dummy pad,

the interface chip and the memory chip have substantially the same size,

the bump pad and the dummy pad overlap each other, and the first test pad and the second test pad overlap each other, and

a first bump is provided on the bump pad, a second bump is provided on the second TSV, and a first dummy bump is provided on the dummy pad.

2. The method of claim 1 , wherein the preparing of the interface chip comprises:

forming the first TSV in a first wafer;

forming a first wire layer connected to the first TSV;

providing the first bump on the first wafer; and

performing a first singulation for individualizing the first wafer,

the preparing of the memory chip comprises:

forming an integrated device layer on a second wafer;

forming the second TSV in the second wafer;

forming a second wire layer connected to the second TSV;

arranging the second bump and a dummy bump on the second wafer;

attaching an NCF covering the second bump and the dummy bump on the first wafer; and

performing a second singulation for individualizing the second wafer, and

the forming of the first wire layer and the forming of the second wire layer are performed in a substantially same process.

3. The method of claim 2 , wherein the bump pad and the dummy pad are formed through substantially the same process, and

the first test pad and the second test pad are formed through substantially the same process.

4. The method of claim 2 , wherein the forming of the first wire layer connected to the first TSV comprises forming a bump pad and removing a passivation layer covering the bump pad, such that the bump pad has an open structure,

in the providing of the first bump, the first bump is attached onto an exposed bump pad,

the forming of the second wire layer connected to the second TSV comprises forming the dummy pad, wherein a process for removing a passivation layer covering the dummy pad is omitted, such that the dummy pad has a closed structure, and,

in the arranging of the second bump and the dummy bump, the dummy bump is attached onto the passivation layer at a position corresponding to the dummy pad.

5. The method of claim 2 , wherein, before the providing of the first bump, the interface chip is tested by using the first test pad,

before the arranging of the second bump and dummy bump, the memory chip is tested by using the second test pad, and,

in the providing of the first bump and the arranging of the second bump and the dummy bump, no bump is provided on the first test pad and the second test pad.

6. The method of claim 2 , wherein, in the arranging of the second bump and the dummy bump, a second dummy bump is provided on the memory chip between the second test pad and the second bump, and

when a minimum pitch between adjacent second TSVs or adjacent second bumps is denoted as A, a distance between the second bump and the first dummy bump or a second dummy bump is denoted as B, and a distance between the second test pad and the second dummy bump is denoted as C,

in the arranging of the second bump and a dummy bump, the first dummy bump and the second dummy bump are arranged to satisfy A≤B≤2A and A≤C.

7. The method of claim 1 , further comprising:

after the stacking of the memory chip on the interface chip, sequentially stacking at least one additional memory chip on the memory chip via the NCF by using the TCB method; and

forming a sealant covering the interface chip, the memory chip and the at least one memory chip on the PCB.

8. A method of fabricating a semiconductor package, the method comprising:

preparing a printed circuit board (PCB);

stacking an interface chip on the PCB, wherein the interface chip comprises a first test pad provided in an outer portion, a bump pad provided inside the first test pad, and a first TSV provided between the first test pad and the bump pad; and

stacking a memory chip on the interface chip, wherein the memory chip comprises a second test pad provided in an outer portion, a dummy pad provided inside the second test pad, and a second TSV provided between the second test pad and the dummy pad,

wherein a first bump is provided on the bump pad, a second bump is provided on the second TSV, and a dummy bump is provided on the dummy pad, and

the memory chip is stacked on the interface chip via a non-conductive film (NCF) by using a temperature-compression bonding (TCB) method.

9. The method of claim 8 , wherein the bump pad and the dummy pad overlap each other, and the first test pad and the second test pad overlap each other.

10. The method of claim 9 , wherein,

when a minimum pitch between adjacent second TSVs or adjacent second bumps is denoted as A and a distance between the second bump and the dummy bump is denoted as B, the dummy bump is configured to satisfy A≤B≤2A.

11. The method of claim 10 , wherein,

when a distance between the second test pad and the second bump is greater than 2A, the dummy bump is provided on the memory chip between the second test pad and the second bump, and, when a distance between the second test pad and the dummy bump adjacent thereto is denoted as C, the dummy bump is configured to satisfy A≤C.

12. The method of claim 8 , wherein the interface chip and the memory chip have substantially the same size.

13. The method of claim 8 , further comprising:

preparing the interface chip; and

preparing the memory chip,

wherein

the preparing of the interface chip comprises:

forming the first TSV in a first wafer;

forming a first wire layer connected to the first TSV;

providing the first bump on the first wafer; and

performing a first singulation for individualizing the first wafer, and

the preparing of the memory chip comprises:

forming an integrated device layer on a second wafer;

forming the second TSV in the second wafer;

forming a second wire layer connected to the second TSV;

arranging the second bump and the dummy bump on the second wafer;

attaching an NCF covering the second bump and the dummy bump on the first wafer; and

performing a second singulation for individualizing the second wafer.

14. The method of claim 13 , wherein

the bump pad and the dummy pad are formed through substantially the same process, and

the first test pad and the second test pad are formed through substantially the same process.

15. The method of claim 13 , wherein the forming of the first wire layer connected to the first TSV comprises forming a bump pad and removing a passivation layer covering the bump pad, such that the bump pad has an open structure,

in the providing of the first bump, the first bump is attached onto an exposed bump pad,

the forming of the second wire layer connected to the second TSV comprises forming the dummy pad, wherein a process for removing a passivation layer covering the dummy pad is omitted, such that the dummy pad has a closed structure, and,

in the arranging of the second bump and the dummy bump, the dummy bump is attached onto the passivation layer at a position corresponding to the dummy pad.

16. The method of claim 13 , wherein,

before the providing of the first bump, the interface chip is tested by using the first test pad,

before the arranging of the second bump and dummy bump, the memory chip is tested by using the second test pad, and,

in the providing of the first bump and the arranging of the second bump and the dummy bump, no bump is provided on the first test pad and the second test pad.

17. The method of claim 8 , further comprising:

after the stacking of the memory chip on the interface chip, sequentially stacking at least one additional memory chip on the memory chip via the NCF by using the TCB method; and

forming a sealant covering the interface chip, the memory chip and the at least one memory chip on the PCB.

18. A method of fabricating a semiconductor package, the method comprising:

the preparing of an interface chip, wherein the interface chip comprises a first test pad provided in an outer portion, a bump pad provided inside the first test pad, and a first TSV provided between the first test pad and the bump pad;

preparing a memory chip, wherein the memory chip comprises a second test pad provided in an outer portion, a dummy pad provided inside the second test pad, and a second TSV provided between the second test pad and the dummy pad;

preparing a printed circuit board (PCB);

stacking the interface chip on the PCB; and

stacking the memory chip on the interface chip via a non-conductive film (NCF) by using a temperature-compression bonding (TCB) method,

wherein the bump pad and the dummy pad overlap each other, and the first test pad and the second test pad overlap each other,

a first bump is provided on the bump pad, a second bump is provided on the second TSV, and a dummy bump is provided on the dummy pad, and

when a minimum pitch between adjacent second TSVs or adjacent second bumps is denoted as A and a distance between the second bump and the dummy bump is denoted as B, the dummy bump is configured to satisfy A≤B≤2A.

19. The method of claim 18 , wherein

the preparing of the interface chip comprises:

forming the first TSV in a first wafer;

forming a first wire layer connected to the first TSV;

providing the first bump on the first wafer; and

performing a first singulation for individualizing the first wafer, and

the preparing of the memory chip comprises:

forming an integrated device layer on a second wafer;

forming the second TSV in the second wafer;

forming a second wire layer connected to the second TSV;

arranging the second bump and a dummy bump on the second wafer;

attaching an NCF covering the second bump and the dummy bump on the first wafer; and

performing a second singulation for individualizing the second wafer.

20. The method of claim 19 , wherein the forming of the first wire layer connected to the first TSV comprises forming a bump pad and removing a passivation layer covering the bump pad, such that the bump pad has an open structure,

in the providing of the first bump, the first bump is attached onto an exposed bump pad,

the forming of the second wire layer connected to the second TSV comprises forming the dummy pad, wherein a process for removing a passivation layer covering the dummy pad is omitted, such that the dummy pad has a closed structure, and,

in the arranging of the second bump and the dummy bump, the dummy bump is attached onto the passivation layer at a position corresponding to the dummy pad.