FinFET device having flat-top epitaxial features and method of making the same
A semiconductor device and method of forming the same are disclosed. The semiconductor device includes a substrate, an isolation structure over the substrate, a fin extending from the substrate, and an epitaxial feature over the fin. The epitaxial feature comprises a lower portion and an upper portion. The lower portion extends from the fin and extends above the isolation structure. The upper portion is over the lower portion. The upper portion extends partially through the lower portion in a cross section perpendicular to a lengthwise direction of the fin.
1. A semiconductor device, comprising:
a substrate;
an isolation structure over the substrate;
a fin extending from the substrate; and
an epitaxial feature over the fin,
wherein:
the epitaxial feature comprises a lower portion and an upper portion;
the lower portion extends from the fin and extends above the isolation structure;
the upper portion is over the lower portion; and
the upper portion extends partially through the lower portion in a cross section perpendicular to a lengthwise direction of the fin.
2. The semiconductor device of claim 1 , wherein a top surface of the upper portion is substantially flat.
3. The semiconductor device of claim 1 , wherein a top surface of the upper portion has a rhombus-shaped profile.
4. The semiconductor device of claim 3 , wherein a bottom surface of the upper portion is substantially flat.
5. The semiconductor device of claim 1 , wherein sidewalls of the upper portion are substantially vertical to a top surface of the substrate.
6. The semiconductor device of claim 1 , wherein the fin extends partially through the isolation structure.
7. The semiconductor device of claim 1 , further comprising:
a contact feature atop the upper portion, wherein a portion of the contact feature extends downwards below a widest part of the upper portion.
8. The semiconductor device of claim 1 , wherein the upper portion and the lower portion have a same type of dopant at different dopant concentrations.
9. The semiconductor device of claim 8 , wherein the upper portion has a higher dopant concentration than the lower portion.
10. The semiconductor device of claim 1 , further comprising:
a set of dielectric features disposed on the isolation structure and on opposing sides of the fin, wherein the lower portion is sandwiched within the set of dielectric features.
11. The semiconductor device of claim 10 , wherein a part of the lower portion is laterally between the set of dielectric features and the upper portion in the cross section.
12. A semiconductor device, comprising:
a substrate;
first and second fins protruding from the substrate;
an epitaxial feature over the first and second fins;
a first set of dielectric features on opposing sides of the first fin; and
a second set of dielectric features on opposing sides of the second fin,
wherein:
the epitaxial feature comprises first and second lower portions and an upper portion;
the first lower portion extends from the first fin and between the first set of dielectric features;
the second lower portion extends from the second fin and between the second set of dielectric features;
the upper portion is over the first and second lower portions; and
the upper portion extends partially through each of the first and second lower portions in a cross-section perpendicular to a lengthwise direction of the first and second fins.
13. The semiconductor device of claim 12 , wherein the upper portion has a different dopant concentration than the first and second lower portions.
14. The semiconductor device of claim 12 , further comprising:
a contact feature interfacing a top surface of the upper portion, wherein the top surface of the upper portion is substantially flat.
15. The semiconductor device of claim 12 , further comprising:
an isolation feature over the substrate, wherein top surfaces of the first and second fins are below a top surface of the isolation feature.
16. The semiconductor device of claim 12 , wherein the first and second fins have a pitch ranging from about 30 nanometer (nm) to about 50 nm.
17. A semiconductor device, comprising:
a substrate;
first and second fins protruding from the substrate;
a first epitaxial feature over the first fin, wherein the first epitaxial feature comprises a first lower portion and a first upper portion with different dopant concentrations, wherein the first upper portion extends partially through the first lower portion in a cross section perpendicular to a lengthwise direction of the first fin;
a second epitaxial feature over the second fin, wherein the second epitaxial feature comprises a second lower portion and a second upper portion with different dopant concentrations; and
a conductive feature interfacing a top surface of the first upper portion and a top surface of the second upper portion, wherein the top surface of the first upper portion is flat and the top surface of the second upper portion is slanted.
18. The semiconductor device of claim 17 , wherein the first epitaxial feature includes n-type doped silicon and the second epitaxial feature includes p-type doped silicon germanium.
19. The semiconductor device of claim 17 , wherein a topmost portion of the second upper portion is above a topmost portion of the first upper portion.
20. The semiconductor device of claim 17 , wherein the conductive feature includes a portion extending downwards below a widest part of the second upper portion.