Backside illuminated global shutter image sensor
Various embodiments of the present disclosure are directed towards an image sensor. The image sensor includes a photodetector disposed in a semiconductor substrate. An interlayer dielectric (ILD) structure is disposed on a first side of the semiconductor substrate. A storage node is disposed in the semiconductor substrate and spaced from the photodetector, where the storage node is spaced from the first side by a first distance. A first isolation structure is disposed in the semiconductor substrate and between the photodetector and the storage node, where the first isolation structure extends into the semiconductor substrate from a second side of the semiconductor substrate that is opposite the first side, and where the first isolation structure is spaced from the first side by a second distance that is less than the first distance.
1. An image sensor, comprising:
a photodetector disposed in a substrate;
an interlayer dielectric (ILD) structure disposed on a first side of the substrate;
a storage node disposed in the substrate and spaced from the photodetector;
a floating diffusion node extending into the substrate from the first side of the substrate;
a vertical transfer gate extending into the substrate from the first side of the substrate, wherein a bottom of the vertical transfer gate is spaced from the first side of the substrate by a first distance, and wherein the vertical transfer gate is configured to selectively form a first conductive channel between the photodetector and the storage node; and
an isolation structure disposed in the substrate and between the photodetector and the storage node, wherein the isolation structure extends into the substrate from a second side of the substrate opposite the first side of the substrate, and wherein the isolation structure is spaced from the first side of the substrate by a second distance less than the first distance.
2. The image sensor of claim 1 , wherein the storage node is vertically spaced from both the first side of the substrate and the second side of the substrate.
3. The image sensor of claim 1 , further comprising:
a reset gate disposed on the first side of the substrate, wherein the floating diffusion node is disposed laterally between the reset gate and the vertical transfer gate.
4. The image sensor of claim 3 , wherein the isolation structure, the reset gate, the floating diffusion node, and the vertical transfer gate are disposed on a same side of the photodetector.
5. The image sensor of claim 1 , further comprising:
a reflective structure disposed on the second side of the substrate, wherein a first portion of the reflective structure is disposed at least partially between opposite sides of the storage node.
6. The image sensor of claim 5 , wherein a second portion of the reflective structure is disposed in the isolation structure and extends into the substrate from the second side of the substrate.
7. The image sensor of claim 6 , further comprising:
a doped region disposed in the substrate, wherein the doped region extends into the substrate from the first side of the substrate, and wherein the isolation structure is at least partially disposed in the doped region.
8. An image sensor, comprising:
a photodetector disposed in a substrate;
a storage node disposed in the substrate and spaced from the photodetector, wherein the storage node is spaced from a first side of the substrate by a first distance;
a reset gate disposed over the first side of the substrate;
a vertical transfer gate extending into the substrate from the first side of the substrate, wherein a portion of the vertical transfer gate is disposed at least partially over the first side of the substrate, and wherein the vertical transfer gate is configured to selectively form a first conductive channel between the photodetector and the storage node; and
an isolation structure disposed in the substrate and between the photodetector and the storage node, wherein the isolation structure extends into the substrate from a second side of the substrate opposite the first side of the substrate, and wherein the isolation structure is spaced from the first side of the substrate by a second distance less than the first distance.
9. The image sensor of claim 8 , further comprising:
a floating diffusion node disposed in the substrate, wherein the floating diffusion node is disposed laterally between the reset gate and the vertical transfer gate.
10. The image sensor of claim 8 , further comprising:
an anti-blooming gate disposed over the first side of the substrate, wherein the anti-blooming gate is laterally spaced from both the reset gate and the vertical transfer gate.
11. The image sensor of claim 10 , wherein:
the anti-blooming gate is disposed on a first side of the photodetector; and
the vertical transfer gate is disposed on a second side of the photodetector opposite the first side of the photodetector.
12. The image sensor of claim 8 , further comprising:
an interlayer dielectric (ILD) structure disposed on the first side of the substrate.
13. An image sensor, comprising:
a photodetector disposed in a substrate;
an interlayer dielectric (ILD) structure disposed on a first side of the substrate;
a storage node disposed in the substrate and spaced from the photodetector;
a floating diffusion node disposed in the substrate and spaced from both the photodetector and the storage node;
a first vertical transfer gate disposed on the first side of the substrate and at least partially between the photodetector and the storage node, wherein a portion of the first vertical transfer gate extends vertically into the substrate, and wherein the first vertical transfer gate is configured to selectively form a first conductive channel between the photodetector and the storage node; and
a second vertical transfer gate disposed on the first side of the substrate and laterally spaced from the first vertical transfer gate, wherein the second vertical transfer gate is disposed at least partially between the storage node and the floating diffusion node, wherein a portion of the second vertical transfer gate extends vertically into the substrate, and wherein the second vertical transfer gate is configured to selectively form a second conductive channel between the storage node and the floating diffusion node.
14. The image sensor of claim 13 , wherein the storage node is disposed laterally between the photodetector and the floating diffusion node.
15. The image sensor of claim 13 , further comprising:
a reflective structure disposed on a second side of the substrate opposite the first side of the substrate, wherein the reflective structure is disposed at least partially between opposite sides of the storage node.
16. The image sensor of claim 13 , wherein:
the substrate has a second side opposite the first side of the substrate;
the storage node is disposed vertically between the portion of the first vertical transfer gate and the second side of the substrate; and
the storage node is disposed vertically between the portion of the second vertical transfer gate and the second side of the substrate.
17. The image sensor of claim 13 , further comprising:
a doped isolation region disposed in the substrate and laterally between the portion of the first vertical transfer gate and the portion of the second vertical transfer gate, wherein the doped isolation region is disposed vertically between the storage node and the first side of the substrate, and wherein the doped isolation region has an opposite doping type than the floating diffusion node.
18. The image sensor of claim 13 , wherein both the portion of the first vertical transfer gate and the portion of the second vertical transfer gate are at least partially disposed laterally between opposite sides of the storage node.
19. The image sensor of claim 13 , wherein the floating diffusion node is disposed laterally between the first vertical transfer gate and the second vertical transfer gate.
20. The image sensor of claim 13 , further comprising:
a reset gate disposed on the first side of the substrate, wherein the floating diffusion node is disposed laterally between the second vertical transfer gate and the reset gate, and wherein the reset gate is configured to selectively form a third conductive channel between the floating diffusion node and a doped region of the substrate.