Data processing device and method for operating data processing device
A data device with a small circuit area and reduced power consumption is used. The data processing device includes a NAND memory portion and a controller. The memory portion includes a first string and a second string in different blocks. The first string includes a first memory cell, and the second string includes a second memory cell. On reception of first data and a signal including an instruction to write the first data, the controller writes the first data to the first memory cell. Then, the controller reads the first data from the first memory cell and writes the first data to the second memory cell.
1. A data processing device comprising:
a NAND memory portion; and
a controller,
wherein the NAND memory portion comprises a first string and a second string in different blocks,
wherein the first string and the second string each comprise a transistor comprising a metal oxide in a channel formation region,
wherein the first string comprises a first memory cell,
wherein the second string comprises a second memory cell, and
wherein the controller is configured to write first data to the first memory cell, read the first data from the first memory cell, and write the first data to the second memory cell.
2. The data processing device according to claim 1 ,
wherein the NAND memory portion comprises a third string,
wherein the second string comprises a third memory cell,
wherein the third string comprises a fourth memory cell, and
wherein the controller is configured to read third data retained in the third memory cell and write the third data to the fourth memory cell,
delete second data retained in the second memory cell and the third data retained in the third memory cell, and
read the third data retained in the fourth memory cell and write the third data to the third memory cell.
3. A method for operating a data processing device comprising a NAND memory portion and a controller, the method comprising:
a first step; a second step; and a third step,
wherein the first step comprises:
a step in which the controller receives first data and a signal including an instruction to write the first data; and
a step in which the first data is written to a first memory cell by the controller,
wherein the second step comprises a step in which the first data is read from the first memory cell by the controller,
wherein the third step comprises a step in which the first data read in the second step is written to a second memory cell by the controller,
wherein the NAND memory portion comprises a first string and a second string in different blocks,
wherein the first string and the second string each comprise a transistor comprising a metal oxide in a channel formation region,
wherein the first string comprises the first memory cell, and
wherein the second string comprises the second memory cell.
4. A method for operating a data processing device comprising a NAND memory portion and a controller, the method comprising:
a first step; a second step; a third step; a fourth step; a fifth step; a sixth step; a seventh step; and an eighth step,
wherein the first step comprises:
a step in which the controller receives first data and a signal including an instruction to rewrite second data retained in a second memory cell to the first data; and
a step in which the first data is written to a first memory cell by the controller,
wherein the second step comprises a step in which third data retained in a third memory cell is read by the controller,
wherein the third step comprises a step in which the third data read in the second step is written to a fourth memory cell by the controller,
wherein the fourth step comprises a step in which the second data retained in the second memory cell and the third data retained in the third memory cell are deleted by the controller,
wherein the fifth step comprises a step in which the first data retained in the first memory cell is read by the controller,
wherein the sixth step comprises a step in which the first data read in the fifth step is written to the second memory cell by the controller,
wherein the seventh step comprises a step in which the third data retained in the fourth memory cell is read by the controller,
wherein the eighth step comprises a step in which the third data read in the seventh step is written to the third memory cell by the controller,
wherein the NAND memory portion comprises a first string, a second string, and a third string in different blocks,
wherein the first string, the second string, and the third string each comprise a transistor comprising a metal oxide in a channel formation region,
wherein the first string comprises the first memory cell,
wherein the second string comprises the second memory cell and the third memory cell, and
wherein the third string comprises the fourth memory cell.
5. A method for operating a data processing device comprising an arithmetic processing unit, a memory device, and wirings, the method comprising:
converting first data input by serial transmission into a plurality of second data;
distributing the plurality of second data to the wirings; and
supplying the plurality of second data to strings at the same time in response to a trigger signal,
wherein the memory device comprises the strings, and
wherein one of the strings is electrically connected to the arithmetic processing unit through one of the wirings.
6. The method for operating the data processing device according to claim 5 ,
wherein the one of the strings comprises memory cells, and
wherein the one of the memory cells comprises a transistor comprising a metal oxide in an oxide semiconductor.
7. The method for operating the data processing device according to claim 5 ,
wherein the memory device is a NAND memory device.
8. The method for operating the data processing device according to claim 6 , wherein the memory device is a NAND memory device.