Dipole-coupled spin-orbit torque structure

1. A magnetic device, comprising:

at least one magnetic junction including a free layer;

a spin-orbit interaction (SO) line adjacent to the free layer, the SO line carrying a current in-plane and exerting an SO torque on the free layer due to the current passing through the SO line, the free layer being switchable between a plurality of stable magnetic states using the SO torque; and

a dipole-coupled layer, the SO line residing between the free layer and the dipole-coupled layer, the dipole-coupled layer being magnetically coupled to the free layer, at least one of the free layer and the dipole-coupled layer having a damping of greater than 0.02.

2. The magnetic device of claim 1 , wherein the magnetic junction includes a reference layer and a nonmagnetic spacer layer between the reference layer and the free layer, the reference layer includes a first magnetic layer, a second magnetic layer and a nonmagnetic layer between the first magnetic layer and the second magnetic layer, the first magnetic layer and the second magnetic layer being antiferromagnetically coupled.

3. The magnetic device of claim 1 , wherein the free layer has a free layer perpendicular magnetic anisotropy energy greater than a free layer out-of-plane demagnetization energy and wherein the dipole-coupled layer has a dipole-coupled layer perpendicular magnetic anisotropy energy greater than a dipole-coupled layer out-of-plane demagnetization energy.

4. The magnetic device of claim 1 , wherein the free layer is separated from the dipole-coupled layer by a distance of not more than eight nanometers.

5. The magnetic device of claim 4 , wherein the distance is at least three nanometers and not more than five nanometers.

6. The magnetic device of claim 1 , wherein the plurality of stable states of the free layer are in-plane.

7. The magnetic device of claim 6 , wherein the free layer has a partial perpendicular magnetic anisotropy of at least fifty percent of a free layer demagnetizing energy.

8. The magnetic device of claim 6 , wherein the free layer has an in-plane anisotropy at an angle from a direction of the spin polarization of the current, the angle being at least five degrees and not more than thirty degrees.

9. The magnetic device of claim 8 , wherein the free layer has a voltage sensitive perpendicular magnetic anisotropy.

10. The magnetic device of claim 1 , wherein the dipole-coupled layer has a dipole-coupled magnetic anisotropy, the free layer has a free layer magnetic anisotropy, the dipole-coupled magnetic anisotropy being less than the free layer magnetic anisotropy.

11. The magnetic device of 10 , wherein the free layer has a free layer thickness of at least 0.5 nanometers and not more than five nanometers, the dipole-coupled layer having a dipole-coupled thickness within 1.5 nanometer of the free layer thickness.

12. The magnetic device of claim 1 , further comprising:

an antiferromagnetic layer adjacent to the dipole-coupled layer.

13. The magnetic device of claim 12 , further comprising

a ferromagnetic layer between the antiferromagnetic layer and the dipole-coupled layer, the ferromagnetic layer sharing an interface with the antiferromagnetic layer; and

a coupling layer between the ferromagnetic layer and the dipole-coupled layer.

14. The magnetic device of claim 1 , wherein the dipole-coupled layer is configured to provide at least partial flux closure for the free layer during switching between the plurality of stable magnetic states.

15. The magnetic device of claim 14 , wherein the effective energy barrier is at least 1.8 multiplied by the free layer energy barrier.

16. A magnetic device, comprising:

a magnetic junction including a free layer, the free layer having a free layer energy barrier due to a free layer-only configuration;

a spin-orbit interaction (SO) line adjacent to the free layer, the SO line carrying a current in-plane and exerting an SO torque on the free layer due to the current passing through the SO line, the free layer being switchable between a plurality of stable magnetic states using the SO torque; and

a dipole-coupled layer, the SO line residing between the free layer and the dipole-coupled layer, at least one of the free layer and the dipole-coupled layer having a damping of greater than 0.02, the dipole-coupled layer being magnetically coupled to the free layer such that a combination of the dipole-coupled layer and the free layer has an effective energy barrier at least 1.5 multiplied by the free layer energy barrier.

17. The magnetic device of claim 16 , wherein the free layer is separated from the dipole-coupled layer by a distance of not more than eight nanometers.

18. The magnetic device of claim 16 , wherein the distance is at least three nanometers and not more than five nanometers.

19. A method for providing a magnetic device, comprising:

providing a magnetic junction including a free layer;

providing a spin-orbit interaction (SO) line adjacent to the free layer, the SO line carrying a current in-plane and exerting an SO torque on the free layer due to the current passing through the SO line, the free layer being switchable between a plurality of stable magnetic states using the SO torque; and

providing a dipole-coupled layer, the SO line residing between the free layer and the dipole-coupled layer, the dipole-coupled layer being magnetically coupled to the free layer, at least one of the free layer and the dipole-coupled layer having a damping of greater than 0.02.

20. The method of claim 19 , wherein the providing the SO line further includes:

providing an SO line having a thickness of not more than eight nanometers.