Ceramic electronic component

1. A ceramic electronic component comprising:

a body including a dielectric layer and an internal electrode; and

an external electrode disposed on the body and connected to the internal electrode, wherein:

at least a region of the dielectric layer includes tin (Sn) and a lanthanide rare earth element (RE) including dysprosium (Dy),

in the at least a region of the dielectric layer, a molar ratio of tin (Sn) to dysprosium (Dy) is from 0.15 to 0.30,

the dielectric layer further includes a barium titanate-based material as a main component, and

in the at least a region of the dielectric layer, a content of dysprosium (Dy) is from 0.20 mole to 0.80 mole per 100 moles of the barium titanate-based material.

2. The ceramic electronic component of claim 1 , wherein:

in the at least a region of the dielectric layer, a molar ratio (Sn/RE) of tin (Sn) to the lanthanide rare earth element (RE) is from 0.15 to 0.25.

3. The ceramic electronic component of claim 1 , wherein:

in the at least a region of the dielectric layer, a content of tin (Sn) is from 0.05 mole to 0.16 mole per 100 moles of the barium titanate-based material.

4. The ceramic electronic component of claim 1 , wherein:

the lanthanide rare earth element (RE) further includes at least one of terbium (Tb), samarium (Sm), and gadolinium (Gd).

5. The ceramic electronic component of claim 4 , wherein:

the at least a region of the dielectric layer includes an acceptor element (AT) including at least one of manganese (Mn), aluminum (Al), vanadium (V), and magnesium (Mg).

6. The ceramic electronic component of claim 5 , wherein:

the at least a region of the dielectric layer further includes a donor element (DN) including at least one of the lanthanide rare earth element (RE), niobium (Nb), and yttrium (Y).

7. The ceramic electronic component of claim 6 , wherein:

in the at least a region of the dielectric layer, a molar ratio of the donor element (DN) to the acceptor element (AT) is from 0.01 to 0.50.

8. The ceramic electronic component of claim 6 , wherein:

the donor element (DN) consists of the lanthanide rare earth element (RE).

9. The ceramic electronic component of claim 8 , wherein:

the acceptor element (AT) includes manganese (Mn), aluminum (Al), and vanadium (V).

10. The ceramic electronic component of claim 9 , wherein:

the acceptor element (AT) consists of manganese (Mn), aluminum (Al), and vanadium (V), and optionally magnesium (Mg).

11. The ceramic electronic component of claim 1 , wherein:

the internal electrode includes a plurality of internal electrodes;

the body includes an active portion having capacitance, the active portion includes the plurality of internal electrodes in which adjacent internal electrodes are disposed to oppose each other with the dielectric layer interposed between the adjacent internal electrodes; and

the at least a region of the dielectric layer is disposed in the active portion.

12. The ceramic electronic component of claim 1 , wherein:

the external electrode includes a first external electrode and a second external electrode, respectively disposed on opposite end surfaces of the body in a length direction; and

the internal electrode includes a plurality of first internal electrodes and a plurality of second internal electrodes alternately laminated in a thickness direction of the body and respectively connected to the first and second external electrodes.

13. The ceramic electronic component of claim 1 , wherein:

the dielectric layer has a thickness of 0.4 μm or more; and

the internal electrode has a thickness of 0.4 μm or less.

14. The ceramic electronic component of claim 13 , wherein:

in the at least a region of the dielectric layer, a content of tin (Sn) is from 0.05 mole to 0.16 mole per 100 moles of the barium titanate-based material.