Semiconductor device

1. A semiconductor device, comprising:

a semiconductor member including

a first semiconductor region of a first conductivity type,

a second semiconductor region of the first conductivity type, and

a third semiconductor region provided between the first semiconductor region and the second semiconductor region, the third semiconductor region being of a second conductivity type;

a first electrode electrically connected to the first semiconductor region;

a second electrode electrically connected to the second semiconductor region;

a gate electrode;

a gate terminal electrically connected to the gate electrode;

a first conductive member electrically insulated from the first electrode, the second electrode, and the gate electrode, a first distance between the gate electrode and the third semiconductor region being less than a second distance between the first conductive member and the third semiconductor region;

a first terminal electrically connected to the first conductive member; and

a first insulating member including

a first insulating region between the third semiconductor region and the gate electrode, and

a second insulating region between the gate electrode and the first conductive member;

a second signal being inputtable to the first terminal and being switched at a different timing from a first signal input to the gate terminal; and

a second conductive member,

wherein

a direction from the first electrode toward the second electrode is along a first direction,

the first semiconductor region includes a first partial region a second partial region, and a third partial region,

a direction from the first partial region toward t second partial region is along a second direction crossing the first direction,

the second direction is along a face of the first electrode opposite to the first semiconductor region,

the third partial region is between the first partial region and the second semiconductor region in the first direction,

the third semiconductor re on is between the third partial region and the second semiconductor region in the first direction,

a direction from the third semiconductor region toward the gate electrode is along the second direction,

at least a portion of the gate electrode is between the second partial region and the second electrode in the first direction,

in the second direction, the gate electrode is between the third partial region and the first conductive member,

a direction from a portion of the third partial region toward the second conductive member is along the second direction,

in the first direction, the second conductive member is between the second partial region avid the gate electrode,

in the first direction, the second conductive member is between the second partial region and the first conductive member,

the first insulating member includes a third insulating region and a fourth insulating region,

the third insulating region is between the third partial region and the second conductive member in the second direction,

the fourth insulating region is between the second partial region and the second conductive member in the first direction,

the second conductive member is electrically connected to the second electrode or electrically connectable to the second electrode, and

at least a portion of the gate electrode is located between the third semiconductor region and the first conductive member in the second direction.

2. The device according to claim 1 , wherein

a first electrical capacitance between the gate electrode and the first electrode is less than a second electrical capacitance between the gate electrode and the first conductive member.

3. The device according to claim 1 , wherein

at least a portion of the first conductive member is between the first electrode and the second electrode.

4. The device according to claim 1 , wherein

the third insulating region is between the third partial region and at least a portion of the first conductive member in the second direction.