Semiconductor device and manufacturing method of the semiconductor device
A method of manufacturing a semiconductor device includes forming a first stack, forming a sacrificial structure and a first contact passing through the first stack, forming a second stack on the first stack, forming a first hole through the second stack to expose the sacrificial structure, forming a second hole through the first stack by removing the sacrificial structure, forming a channel structure in the first and second holes, and forming a second contact passing through the second stack and coupled to the first contact.
1. A method of manufacturing a semiconductor device, the method comprising:
forming a first stack in a cell region and a connection region;
forming a sacrificial structure in the cell region and a first contact in the connection region extending in a vertical direction in the first stack, simultaneously;
forming a second stack over the first stack;
forming a first hole through the second stack to expose the sacrificial structure;
forming a second hole through the first stack by removing the sacrificial structure;
forming a channel structure in the first and second holes; and
forming, after forming the channel structure, a second contact extending in the vertical direction in the second stack and coupled to the first contact.
2. The method according to claim 1 , further comprising:
forming a source structure and a first insulating layer disposed on a same level; and
forming a third contact extending in the vertical direction in the source structure and a fourth contact extending in the vertical direction in the first insulating layer,
wherein the fourth contact is coupled to the first contact.
3. The method according to claim 2 , wherein the source structure is coupled to the channel structure.
4. The method according to claim 2 , wherein a height of the third contact is the same as a height of the fourth contact.
5. The method according to claim 1 , wherein a height of the sacrificial structure is greater than a height of the first contact.
6. The method according to claim 1 , wherein a level of a boundary between the first and second contacts is the same as a level of a boundary between the first and second stacks.
7. The method according to claim 1 , further comprising:
replacing a first portion of a sacrificial pattern of the first stack with a conductive pattern, and retaining a second portion of the sacrificial pattern,
wherein the first portion encloses the channel structure, and
wherein the second portion encloses the first contact.
8. The method according to claim 1 , wherein a level of an upper surface of the sacrificial structure is the same as a level of an upper surface of the first contact.
9. A method of manufacturing a semiconductor device, the method comprising:
forming a substrate;
forming an insulating structure over the substrate;
forming a source structure and a first insulating layer over the insulating structure;
forming a first contact extending in the vertical direction in the source structure and a second contact extending in the vertical direction in the first insulating layer;
forming, after forming the first contact and the second contact, a first stack over the first contact, the second contact, the source structure, and the first insulating layer;
forming a third contact extending in the vertical direction in the first stack and coupled to the second contact;
forming a second stack over the first stack; and
forming a fourth contact extending in the vertical direction in the second stack and coupled to the third contact.
10. The method according to claim 9 , further comprising:
forming a channel structure through the first and second stacks.
11. The method according to claim 10 , wherein forming the channel structure comprises:
forming a sacrificial structure through the first stack;
forming a first hole through the second stack to expose the sacrificial structure; and
removing the sacrificial structure.
12. The method according to claim 10 , wherein:
a sum of heights of the second, third, and fourth contacts is greater than a height of the channel structure, and
a sum of heights of the third and fourth contacts is smaller than the height of the channel structure.
13. The method according to claim 9 , wherein a width of an upper surface of the third contact is greater than a width of a lower surface of the fourth contact.
14. The method according to claim 13 , wherein the upper surface of the third contact is in contact with a lower surface of the second stack.
15. The method according to claim 13 , wherein a level of the upper surface of the third contact and a level of the lower surface of the fourth contact are the same as a level of a boundary between the first and second stacks.
16. The method according to claim 9 , further comprising:
forming a memory layer extending in the vertical direction in the first and second stacks,
wherein the memory layer comprises:
a first memory part extending in the vertical direction in the second stack, a second memory part extending in the vertical direction in the first stack, and a third memory part coupling the first memory part and the second memory part, and
wherein a level of an upper surface of the third memory part is the same as a level of a boundary between the third and fourth contacts.
17. The method according to claim 9 , wherein a height of the first contact is the same as a height of the second contact.