IP Library › Granted Patent US 11,778,846
Granted Patent B2
US 11,778,846 · App. 17/521,167 · Granted Oct 3, 2023

Light-emitting element, light-emitting device, display device, electronic device, and lighting device

Inventors: Satoshi Seo (Kanagawa, JP); Shunpei Yamazaki (Tokyo, JP); Takahiro Ishisone (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H10K50/13H10K50/11H10K50/85H10K85/342H10K85/611H10K85/626H10K85/633H10K85/636H10K85/6572H10K85/6576H10K2101/10H10K2101/40H10K2101/90H10K2102/103
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Quick Facts
Patent No.
US 11,778,846
App. No.
17/521,167
Granted
Oct 3, 2023
Kind
B2
Abstract

An object is to provide a light-emitting element which uses a plurality of kinds of light-emitting dopants and has high emission efficiency. In one embodiment of the present invention, a light-emitting device, a light-emitting module, a light-emitting display device, an electronic device, and a lighting device each having reduced power consumption by using the above light-emitting element are provided. Attention is paid to Förster mechanism, which is one of mechanisms of intermolecular energy transfer. Efficient energy transfer by Förster mechanism is achieved by making an emission wavelength of a molecule which donates energy overlap with the longest-wavelength-side local maximum peak of a graph obtained by multiplying an absorption spectrum of a molecule which receives energy by a wavelength raised to the fourth power.

Claims (58)

1. A light-emitting element comprising:

a first electrode;

a first light-emitting layer;

a second light-emitting layer; and

a second electrode,

wherein the first light-emitting layer is between the first electrode and the second light-emitting layer,

wherein the second light-emitting layer is between the first light-emitting layer and the second electrode,

wherein the first light-emitting layer comprising:

a first phosphorescent compound;

a first host material; and

a first organic compound,

wherein the second light-emitting layer comprising:

a second phosphorescent compound; and

a second host material,

wherein the first host material and the first organic compound form an exciplex,

wherein light emitted from the second phosphorescent compound has a longer wavelength than light emitted from the first phosphorescent compound,

wherein a difference between an emission peak wavelength of a photoluminescence spectrum F(λ) of the exciplex and a wavelength of the longest-wavelength-side local maximum of a function ε(λ)λ 4 of the first phosphorescent compound is 0.2 eV or less when converted into energy,

wherein a difference between an emission peak wavelength of a photoluminescence spectrum F(λ) of the first phosphorescent compound and a wavelength of the longest-wavelength-side local maximum of a function ε(λ)λ 4 of the second phosphorescent compound is 0.2 eV or less when converted into energy,

wherein λ denotes a wavelength, and

wherein ε(λ) denotes a molar absorption coefficient at the wavelength λ.

2. The light-emitting element according to claim 1 ,

wherein the first electrode is a cathode, and

wherein the second electrode is an anode.

3. The light-emitting element according to claim 1 , wherein the first light-emitting layer and the second light-emitting layer are in contact with each other.

4. The light-emitting element according to claim 1 ,

wherein the first phosphorescent compound has a photoluminescence peak in a range of 500 nm to 600 nm, and

wherein the second phosphorescent compound has a photoluminescence peak in a range of 600 nm to 700 nm.

5. A light-emitting device comprising the light-emitting element according to claim 1 , and a transistor to control the light-emitting element.

6. An electronic device comprising the light-emitting device according to claim 5 .

7. A light-emitting element comprising:

a first electrode;

a first light-emitting layer;

a second light-emitting layer; and

a second electrode,

wherein the first light-emitting layer is between the first electrode and the second light-emitting layer,

wherein the second light-emitting layer is between the first light-emitting layer and the second electrode,

wherein the first light-emitting layer comprising:

a first iridium complex;

a first host material; and

a first organic compound,

wherein the second light-emitting layer comprising:

a second iridium complex; and

a second host material,

wherein the first host material and the first organic compound form an exciplex,

wherein light emitted from the second iridium complex has a longer wavelength than light emitted from the first iridium complex,

wherein a difference between an emission peak wavelength of a photoluminescence spectrum F(λ) of the exciplex and a wavelength of the longest-wavelength-side local maximum of a function ε(λ)λ 4 of the first iridium complex is 0.2 eV or less when converted into energy,

wherein a difference between an emission peak wavelength of a photoluminescence wherein a difference between an emission peak wavelength of a photoluminescence spectrum F(λ) of the first iridium complex and a wavelength of the longest-wavelength-side local maximum of a function ε(λ)λ 4 of the second iridium complex is 0.2 eV or less when converted into energy,

wherein λ denotes a wavelength, and

wherein ε(λ) denotes a molar absorption coefficient at the wavelength λ.

8. The light-emitting element according to claim 7 ,

wherein the first electrode is a cathode, and

wherein the second electrode is an anode.

9. The light-emitting element according to claim 7 , wherein the first light-emitting layer and the second light-emitting layer are in contact with each other.

10. The light-emitting element according to claim 7 ,

wherein the first iridium complex has a photoluminescence peak in a range of 500 nm to 600 nm, and

wherein the second iridium complex has a photoluminescence peak in a range of 600 nm to 700 nm.

11. A light-emitting device comprising the light-emitting element according to claim 7 , and a transistor to control the light-emitting element.

12. An electronic device comprising the light-emitting device according to claim 11 .

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 8, 2021
From: SEO, SATOSHI; YAMAZAKI, SHUNPEI; ISHISONE, TAKAHIRO
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 058047/0346 →
Priority Claims (2)
JP 2012-096808 · Apr 20, 2012 · national
JP 2013-052791 · Mar 15, 2013 · national
Continuity (8)
Continuation 17038003 · Sep 30, 2020
Continuation 16188527 · Nov 13, 2018
Continuation 16139774 · Sep 24, 2018
Continuation 15612244 · Jun 2, 2017
Continuation 15042564 · Feb 12, 2016
Continuation 14644887 · Mar 11, 2015
Continuation 13863597 · Apr 16, 2013
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