IP Library › Granted Patent US 11,783,874
Granted Patent B2
US 11,783,874 · App. 17/470,579 · Granted Oct 10, 2023

Memory with swap mode

Inventors: Taehyeon Park (Hwaseong-si, KR); Byunghoon Jeong (Hwaseong-si, KR); Chiweon Yoon (Seoul, KR)
Assignee: SAMSUNG ELECTRONICS CO., LTD.
G11C7/1012G11C7/109G11C7/1057G11C7/1063G11C7/1084G11C7/20G11C8/06
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Quick Facts
Patent No.
US 11,783,874
App. No.
17/470,579
Granted
Oct 10, 2023
Kind
B2
Abstract

A memory chip, a memory controller, and an operating method of the memory chip are provided. The memory chip includes a plurality of pins; and an interface circuit configured to receive a swap command set from a memory controller through the plurality of pins, obtain a swap command and a swap address from the swap command set, generate a swap enable signal based on the swap command and the swap address, and swap and output a data signal according to the swap enable signal.

Claims (30)

1. A memory chip comprising:

a plurality of pins; and

an interface circuit configured to receive a swap command set from a memory controller through the plurality of pins, obtain a swap command and a swap address from the swap command set, generate a swap enable signal based on the swap command and the swap address, and swap and output a data signal according to the swap enable signal,

wherein each of the swap command and the swap address comprises a palindrome.

2. The memory chip of claim 1 , wherein the interface circuit is configured to, when obtaining a first data signal comprising a palindrome and then sequentially obtaining a second data signal comprising a palindrome from the swap command set, determine the first data signal as the swap command, and determine the second data signal as the swap address.

3. The memory chip of claim 2 , wherein the swap command sets up the interface circuit for a swap operation of the memory chip, and

wherein the swap address determines whether to swap the data signal.

4. The memory chip of claim 3 , wherein the interface circuit is configured to determine a logic level of the swap enable signal based on the swap address.

5. The memory chip of claim 1 , wherein the swap command and the swap address are obtained between a time when the memory chip receives a power up command and a time when the memory chip receives a reset command or obtained after the time when the memory chip receives the reset command.

6. The memory chip of claim 1 , wherein the interface circuit comprises:

a plurality of multiplexers respectively connected to the plurality of pins to receive the data signal and the swap command set; and

a swap decision circuit configured to receive the swap command set, generate the swap enable signal based on the swap address, and provide the swap enable signal to the plurality of multiplexers as a selection signal, and

wherein data output through the plurality of multiplexers is forward data or swapped data.

7. The memory chip of claim 6 , wherein the plurality of pins comprise first and second pins,

wherein the data signal comprises first and second signals,

wherein the plurality of multiplexers comprise first and second multiplexers,

wherein the first multiplexer is connected to first and second pins to receive first and second signals,

wherein the second multiplexer is connected to the second and first pins to receive the second and first signals, and

wherein the first and second multiplexers are configured to output the first and second signals, respectively, or output the second and first signals, respectively, according to the swap enable signal.

8. An operating method of a memory chip comprising a plurality of pins, the operating method comprising:

receiving a swap command set through the plurality of pins;

obtaining a swap command and a swap address from the swap command set;

generating a swap enable signal based on the swap command and the swap address; and

swapping and outputting a data signal through the plurality of pins according to the swap enable signal,

wherein the plurality of pins comprises a swap mode pin,

wherein the receiving of the swap command set comprises receiving a first signal determining a swap mode of the memory chip through the swap mode pin.

9. The operating method of claim 8 , wherein the generating of the swap enable signal comprises generating the swap enable signal according to the swap address when the swap address indicates a command-type swap mode of the memory chip based on the swap command, the swap address, and the first signal; and

generating the first signal as the swap enable signal when the swap address does not indicate the command-type swap mode of the memory chip.

10. The operating method of claim 9 , wherein the generating of the first signal as the swap enable signal comprises:

generating the first signal as the swap enable signal in response to the swap address indicating any one of a power-off operation, a reset operation, and a pin-type swap mode operation of the memory chip.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 9, 2021
From: PARK, TAEHYEON; JEONG, BYUNGHOON; YOON, CHIWEON
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 057430/0401 →
Priority Claims (2)
KR 10-2020-0127539 · Sep 29, 2020 · national
KR 10-2021-0010358 · Jan 25, 2021 · national
Continuity (1)
Related Publication 20220101893A1 · Mar 31, 2022