Semiconductor memory device

1. A semiconductor memory device comprising:

a voltage generator which includes a first driver and a second driver;

a plurality of planes including a plurality of blocks each being a set of memory cells, the plurality of planes including a first plane and a second plane to which power is supplied from the first driver, and a third plane and a fourth plane to which power is supplied from the second driver; and

a sequencer configured to execute a first operation and a second operation, a first duration of the first operation being longer than a second duration of the second operation,

wherein:

upon receiving a first command set that instructs execution of the first operation, the sequencer executes the first operation, and upon receiving a second command set that instructs execution of the second operation while the first operation is being executed, the sequencer suspends the first operation and executes the second operation or executes the second operation in parallel with the first operation, based on an address of a block that is a target of the first operation and an address of a block that is a target of the second operation, and

the sequencer, after initiating the first operation and prior to completing the first operation targeted at a block included in the first plane:

suspends the first operation and executes the second operation upon receiving the second command set targeted at a block included in the first plane; and

executes the second operation in parallel with the first operation upon receiving the second command set targeted at a block included in one of the second plane, the third plane, and the fourth plane.

2. The semiconductor memory device of claim 1 , wherein the first operation is an erase operation, and the second operation is a read operation.

3. The semiconductor memory device of claim 2 , wherein a timing at which the sequencer executes the second operation upon receiving the second command set while the first operation is being executed changes based on a timing at which the second command set is received.

4. The semiconductor memory device of claim 2 , wherein the first operation is resumed regardless of an instruction from an external memory controller after data read by the second operation has been output.

5. The semiconductor memory device of claim 2 , wherein the first operation is resumed based on a command that has been externally received, after data read by the second operation has been output.

6. A device comprising:

a first plane including one or more first blocks of memory cells powered by a first driver;

a second plane including one or more second blocks of memory cells powered by a second driver; and

a sequencer configured to:

initiate a first operation on one of the one or more first blocks of memory cells, in response to a first command set,

receive, while executing the first operation, a second command set including an address of a target block to execute a second operation,

determine whether to suspend or continue the first operation while executing the second operation, based on the address of the target block, and

execute the second operation, while suspending or continuing the first operation, according to the determination based on the address of the target block.

7. The device of claim 6 , wherein the sequencer is configured to:

determine to suspend the first operation while executing the second operation, in response to the target block being another one of the one or more first blocks.

8. The device of claim 6 , wherein the sequencer is configured to:

determine to execute the first operation and the second operation in parallel, in response to the target block being one of the one or more second blocks.

9. The device of claim 6 , wherein the first operation is an erase operation, and the second operation is a read operation.

10. A device comprising:

a first plane including one or more first blocks of memory cells powered by a first driver;

a second plane including one or more second blocks of memory cells powered by a second driver; and

a sequencer configured to:

execute, during a first time period, a first portion of a first operation on one of the one or more first blocks of memory cells,

receive, during the first time period, a command set to execute a second operation, the command set including an address of a target block,

suspend, during a second time period after the first time period, the first operation, in response to a determination based on the address that the target block is another one of the one or more first blocks of memory cells,

execute, during the second time period, the second operation, and

execute, during a third time period after the second time period, a second portion of the first operation, in response to completing the second operation.

11. The semiconductor memory device of claim 10 , wherein the first operation is an erase operation, and the second operation is a read operation.

12. The semiconductor memory device of claim 11 , wherein a timing at which the sequencer executes the second operation changes based on a timing at which the command set is received.

13. The semiconductor memory device of claim 11 , wherein the first operation is resumed regardless of an instruction from an external memory controller after data read by the second operation has been output.

14. The semiconductor memory device of claim 11 , wherein the first operation is resumed based on a command that has been externally received, after data read by the second operation has been output.