Stacked semiconductor device and semiconductor system including the same
A memory device includes a first data strobe pad; a strobe signal generation circuit suitable for generating a read data strobe signal based on a read timing signal; a monitoring receiver suitable for receiving the read data strobe signal fed back through the first data strobe pad according to a monitoring enable signal; a sampler suitable for generating a sampling clock by sampling the fed back read data strobe signal according to a random clock; a first counter suitable for generating a first counting signal by counting the random clock; a second counter suitable for generating a second counting signal by counting the sampling clock; and a duty detector suitable for generating a duty ratio detection signal based on the first counting signal and the second counting signal.
1. A semiconductor device, comprising:
a first data strobe pad;
a strobe signal generation circuit suitable for generating a read data strobe signal based on a read timing signal;
a monitoring receiver suitable for receiving the read data strobe signal which is fed back through the first data strobe pad according to a monitoring enable signal;
a sampler suitable for generating a sampling clock by sampling the fed back read data strobe signal according to a random clock;
a first counter suitable for generating a first counting signal by counting the random clock;
a second counter suitable for generating a second counting signal by counting the sampling clock; and
a duty detector suitable for generating a duty ratio detection signal based on the first counting signal and the second counting signal.
2. The semiconductor device of claim 1 , further comprising:
a second data strobe pad; and
a timing control circuit suitable for generating the read timing signal according to a write data strobe signal inputted through the second data strobe pad during a read operation.
3. The semiconductor device of claim 2 , further comprising:
a base chip in which a plurality of data pads, the first data strobe pad, and the second data strobe pad are disposed; and
at least one core chip stacked on the base chip and electrically connected to the base chip through a through electrode formed by vertically penetrating an inside of the core chip.
4. The semiconductor device of claim 1 , further comprising a transmitter suitable for outputting the read data strobe signal which is generated by the strobe signal generation circuit, to the first data strobe pad.
5. The semiconductor device of claim 1 ,
further comprising a random oscillator suitable for generating the random clock having a random period,
wherein the random oscillator is activated according to the monitoring enable signal and deactivated according to a full-counting signal which is transferred from the first counter when the first counting signal is fully counted to reach a maximum.
6. The semiconductor device of claim 1 , wherein the sampler includes:
a flip-flop suitable for latching the fed back read data strobe signal at a rising edge of the random clock to output a pre-sampling clock; and
a filter suitable for filtering the pre-sampling clock according to the random clock to output the sampling clock.
7. The semiconductor device of claim 1 ,
further comprising a multiplexer suitable for outputting, as an operational clock, one of an internal clock and the sampling clock according to the monitoring mode signal,
wherein the second counter includes a multiple input signature register (MISR) circuit for performing a function of a linear feedback shift register (LFSR) according to the operational clock.
8. A stacked semiconductor device, comprising:
a base chip including:
a first data strobe pad,
a strobe signal generation circuit suitable for generating a read data strobe signal based on a read timing signal, and
a monitoring circuit suitable for:
generating a sampling clock by sampling the read data strobe signal which is fed back through the first data strobe pad according to a random clock, and
monitoring a duty ratio of the read data strobe signal based on first and second counting signals which are generated by respectively counting the random clock and the sampling clock during a monitoring operation; and
at least one core chip stacked over the base chip.
9. The stacked semiconductor device of claim 8 , wherein the base chip includes:
a second data strobe pad; and
a timing control circuit suitable for generating the read timing signal according to a write data strobe signal inputted through the second data strobe pad during a read operation.
10. The stacked semiconductor device of claim 8 , wherein the base chip includes a transmitter suitable for outputting the read data strobe signal which is generated by the strobe signal generation circuit, to the first data strobe pad.
11. The stacked semiconductor device of claim 8 , wherein the monitoring circuit includes:
a monitoring receiver suitable for receiving the read data strobe signal which is fed back through the first data strobe pad, according to a monitoring enable signal;
a sampler suitable for generating the sampling clock by sampling the fed back read data strobe signal according to the random clock;
a first counter suitable for generating the first counting signal by counting the random clock;
a second counter suitable for generating the second counting signal by counting the sampling clock; and
a duty detector suitable for detecting the duty ratio of the read data strobe signal based on the first counting signal and the second counting signal.
12. The stacked semiconductor device of claim 11 ,
wherein the monitoring circuit further includes a random oscillator suitable for generating the random clock having a random period, and
wherein the random oscillator is activated according to the monitoring enable signal and deactivated according to a full-counting signal which is transferred from the first counter when the first counting signal is fully counted to reach a maximum.
13. The stacked semiconductor device of claim 11 , wherein the sampler includes:
a flip-flop suitable for latching the fed back read data strobe signal at a rising edge of the random clock to output a pre-sampling clock; and
a filter suitable for filtering the pre-sampling clock according to the random clock to output the sampling clock.
14. The stacked semiconductor device of claim 11 ,
wherein the monitoring circuit further includes a multiplexer suitable for outputting, as an operational clock, one of an internal clock and the sampling clock according to the monitoring mode signal, and
wherein the second counter includes a multiple input signature register (MISR) circuit for performing a function of a linear feedback shift register (LFSR) according to the operational clock.
15. A semiconductor device comprising:
a sampler suitable for generating a sampling clock by sampling a data strobe signal according to a random clock;
a first counter suitable for generating a first counting signal by counting the random clock;
a second counter suitable for generating a second counting signal by counting the sampling clock; and
a duty detector suitable for detecting a duty ratio of the data strobe signal based on the first and second counting signals.
16. The semiconductor device of claim 15 , wherein the second counter is a multiple input signature register (MISR) circuit suitable for performing a function of a linear feedback shift register (LFSR) according to the sampling clock.