Preparation of lanthanide-containing precursors and deposition of lanthanide-containing films
The disclosed lanthanide precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent and at least one bidentate ligand. These precursors are suitable for depositing lanthanide containing films.
1. A chemical having any one of formulae (a)-(c):
La(isopropyl-Cp) 2 (thd), a )
Er(methyl-Cp) 2 (N Et O-DK), or b )
Er(methyl-Cp) 2 (N nPr O-DK), c )
wherein La is Lanthanum, Er is Erbium, Cp is Cyclopentadienyl, N Et O-DK is -(Et)N—C(Me)═CH—C(Me)═O, N nPr O-DK is -(nPr)N—C(Me)═CH—C(Me)═O, Et is ethyl, Me is methyl, nPr is n-propyl.
2. A composition suitable for use in chemical vapor deposition and/or atomic layer deposition for semiconductor manufacturing, the composition comprising the chemical of claim 1 .
3. The composition of claim 2 , wherein the chemical is 99% or more of the composition by weight.
4. A method of depositing a lanthanide-containing film, the method comprising a step of providing a vapor phase of the chemical of claim 1 to a chemical vapor deposition or atomic layer deposition process.
5. The method of claim 4 , wherein the chemical vapor deposition or atomic layer deposition process produces a lanthanide-containing film on a substrate.
6. The method of claim 5 , wherein the substrate is a semiconductor substrate.