Stacking structure, package structure and method of fabricating the same
A package structure includes a plurality of stacked die units and an insulating encapsulant. The plurality of stacked die units is stacked on top of one another, where each of the plurality of stacked die units include a first semiconductor die, a first bonding chip. The first semiconductor die has a plurality of first bonding pads. The first bonding chip is stacked on the first semiconductor die and has a plurality of first bonding structure. The plurality of first bonding structures is bonded to the plurality of first bonding pads through hybrid bonding. The insulating encapsulant is encapsulating the plurality of stacked die units.
1. A structure, comprising:
a first stacked die unit, comprising:
a first base die having a plurality of bonding pads;
a first chip having a plurality of bonding structures, wherein the first chip is bonded to the first base die in a way that two or more of the plurality of bonding pads are joined with one of the plurality of bonding structures;
a second stacked die unit stacked on the first stacked die unit, and comprising a second base die and a second chip stacked on the second base die; and
bonding wires electrically connected to the first base die and the second base die.
2. The structure according to claim 1 , wherein the second based die have a plurality of bonding pads, the second chip have a plurality of bonding structures, and the plurality of bonding pads of the second base die faces the plurality of bonding structures of the second chip so that they are physically bonded with one another.
3. The structure according to claim 2 , wherein the second stacked die unit further comprises an auxiliary chip stacked on the second base die aside the second chip, wherein the auxiliary chip is physically separated from the second chip.
4. The structure according to claim 1 , further comprising an insulating encapsulant encapsulating the first stacked die unit and the second stacked die unit, wherein the insulating encapsulant fills into a space in between the first base die and the second base die.
5. The structure according to claim 1 , further comprising an adhesive layer joining the first stacked die unit to the second stacked die unit.
6. The structure according to claim 1 , further comprising a semiconductor substrate, wherein the first stacked die unit or the second stacked die unit is attached to the semiconductor substrate through an adhesive layer.
7. The structure according to claim 1 , wherein sidewalls of the first base die of the first stacked die unit are aligned with sidewalls of the second base die of the second stacked die unit.
8. A stacking structure, comprising:
a first stacked die unit and a second stacked die unit stacked on top of one another, wherein each of the first stacked die unit and the second stacked die unit comprises:
a first semiconductor die having first bonding pads;
a first bonding chip stacked on the first semiconductor die and having first bonding structures, wherein the first bonding structures are physically attached to the first bonding pads;
a second bonding chip stacked on the first semiconductor die and having second bonding structures, wherein the second bonding structures are physically attached to the first bonding pads; and
an insulating encapsulant encapsulating the first stacked die unit and the second stacked die unit and filling into a space between the first bonding chip and the second bonding chip.
9. The stacking structure according to claim 8 , further comprising a redistribution layer, wherein the first stacked die unit or the second stacked die unit is attached to the redistribution layer through an adhesive layer.
10. The stacking structure according to claim 8 , further comprising a plurality of conductive wires electrically connected to the first bonding pads of the first stacked die unit and the second stacked die unit.
11. The stacking structure according to claim 10 , wherein at least one of the plurality of conductive wires is directly connecting the first bonding pads of the first stacked die unit to the first bonding pads of the second stacked die unit.
12. The stacking structure according to claim 8 , wherein the first stacked die unit further comprises a second semiconductor die having a plurality of second bonding pads, wherein the first semiconductor die is attached to the second semiconductor die through an adhesive layer, and the adhesive layer cover portions of the plurality of second bonding pads.
13. The stacking structure according to claim 8 , further comprising a third stacked die unit stacked on top of the first stacked die unit and the second stacked die unit, wherein the third stacked die unit comprises:
a base die having conductive pads; and
a controller chip having conductive structures, wherein the conductive structures of the controller chip is physically attached to the conductive pads of the base die.
14. The stacking structure according to claim 13 , wherein two of the conductive pads of the base die are joined with one of the conductive structures of the controller chip.
15. A semiconductor package, comprising:
a first stacked die unit comprising:
a first base die; and
a first controller chip disposed on the first base die, wherein the first controller chip comprises a plurality of bonding structures located on a first surface of the first controller chip, and a plurality of auxiliary bonding structures located on a second surface of the first controller chip, the first controller chip is bonded to the first base die through the plurality of bonding structures at the first surface, and wherein the second surface is opposite to the first surface;
a second stacked die unit disposed on the first stacked die unit, and comprising:
a second base die disposed on the second surface of the first controller chip, wherein the second base die comprises a plurality of second bonding pads and a plurality of auxiliary bonding pads, wherein the plurality of auxiliary bonding structures is physically attached to the plurality of auxiliary bonding pads; and
a second controller chip disposed on the second base die and comprising a plurality of second bonding structures, wherein the plurality of second bonding structures is physically attached to the plurality of second bonding pads.
16. The semiconductor package according to claim 15 , further comprising:
a third stacked die unit disposed on the second stacked die unit, and comprising:
a third base die disposed on the second controller chip, wherein the third base die comprises a plurality of third bonding pads; and
a third controller chip disposed on the third base die and comprising a plurality of third bonding structures, wherein the plurality of third bonding structures is physically attached to the plurality of third bonding pads.
17. The semiconductor package according to claim 15 , further comprising a semiconductor substrate, wherein the plurality of stacked die units is attached to the semiconductor substrate through an adhesive layer.
18. The semiconductor package according to claim 17 , further comprising a plurality of conductive wires electrically connected to the semiconductor substrate, the first base die and the second base die.
19. The semiconductor package according to claim 15 , further comprising an insulating encapsulant encapsulating the first stacked die unit and the second stacked die unit, wherein the insulating encapsulant fills into a space in between the first base die and the second base die.
20. The semiconductor package according to claim 15 , wherein the first controller chip is sandwiched in between and in physical contact with the first base die and the second base die, while the second base die is sandwiched in between and in physical contact with the first controller chip and the second controller chip.