Solid-state imaging device, method for manufacturing solid-state imaging device and electronic apparatus having a multi-pixel having a back side separating part

Inventors: Shunsuke Tanaka (Tokyo, JP); Saswatee Banerjee (Tokyo, JP)

Assignee: BRILLNICS SINGAPORE PTE. LTD.

H01L27/14627 H01L27/1463 H01L27/1464 H01L27/14623 H01L27/14685 H01L27/14621 H01L27/14645 H01L27/14649

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Quick Facts

Patent No.: US 11,784,203
App. No.: 16/911,266
Granted: Oct 10, 2023
Kind: B2

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Abstract

Provided are a solid-state imaging device, a method for manufacturing a solid-state imaging device and an electronic apparatus that produce little crosstalk between adjacent sub-pixels, can reduce the influence of the luminance shading, and can even prevent degradation in the sensitivity at the optical center. A multi-pixel includes a back-side separating part separating a plurality of adjacent sub-pixels from each other, and a lens part including a single microlens allowing light to enter photoelectric converting regions of sub-pixels. Here, the optical center of the microlens is positioned on the location where the back side separating part is formed, and the back side separating part is formed such that at least the optical center region thereof exhibits lower reflection than the other region of the back side separating part.

Claims (69)

1. A solid-state imaging device comprising:

a multi-pixel including at least four sub-pixels, each sub-pixel having a photoelectric converting region, wherein the at least four sub-pixels comprise at least one green sub-pixel, at least one red sub-pixel, at least one blue sub-pixel, and at least one near-infrared sub-pixel,

a back side separating part separating a plurality of adjacent sub-pixels from each other at least in a light entering portion of the photoelectric converting region thereof;

a trench-shaped back side separating part formed in the photoelectric converting region, the trench-shaped back side separating part aligned with the back side separating part in a depth direction of the photoelectric converting region;

an anti-reflective film formed between the back side separating part and the trench-shaped back side separating part; and

a lens part allowing light to enter the photoelectric converting region of at least four of the plurality of adjacent sub-pixels, wherein:

the lens part is arranged such that an optical center thereof is positioned at a location where the back side separating part is formed, and

the back side separating part is formed such that at least an optical center region thereof exhibits low reflection.

2. The solid-state imaging device according to claim 1 , wherein the back side separating part is formed such that the optical center region thereof exhibits lower reflection than the other region of the back side separating part.

3. The solid-state imaging device according to claim 1 , wherein the back side separating part is formed such that the optical center region and the other region of the back side separating part exhibit low reflection.

4. The solid-state imaging device according to claim 1 , wherein a low reflection part of the back side separating part exhibiting lower reflection is made of a material exhibiting low reflection within a specific wavelength range.

5. The solid-state imaging device according to claim 1 , wherein, from the back side separating part, a material forming the back side separating part is removed so that the lower reflection is achieved.

6. The solid-state imaging device according to claim 1 , wherein the trench-shaped back side separating part exhibits low reflection.

7. The solid-state imaging device according to claim 1 , wherein, in a vicinity of an optical center of the multi-pixel in which at least one lens part is shared by sub-pixels, the back side separating part, the back side separating part and the trench-shaped back side separating part, or, if the back side separating part is removed, the trench-shaped back side separating part can be alternatively made of a low-reflection material.

8. The solid-state imaging device according to claim 1 , wherein:

in the multi-pixel, a first sub-pixel, a second sub-pixel, a third sub-pixel and a fourth sub-pixel are arranged in a square geometry such that, in a first direction, the first sub-pixel is adjacent to the second sub-pixel and the third sub-pixel is adjacent to the fourth sub-pixel and that, in a second direction orthogonal to the first direction, the first sub-pixel is adjacent to the third sub-pixel and the second sub-pixel is adjacent to the fourth sub-pixel,

the lens part is formed by a single microlens allowing light to enter a first photoelectric converting region of the first sub-pixel, a second photoelectric converting region of the second sub-pixel, a third photoelectric converting region of the third sub-pixel and a fourth photoelectric converting region of the fourth sub-pixel, and

an optical center of the single microlens is positioned in a pixel center region where a boundary of the first sub-pixel, a boundary of the second sub-pixel, a boundary of the third sub-pixel and a boundary of the fourth sub-pixel meet each other.

9. The solid-state imaging device according to claim 1 ,

wherein, in the multi-pixel, a first sub-pixel, a second sub-pixel, a third sub-pixel and a fourth sub-pixel are arranged in a square geometry such that, in a first direction, the first sub-pixel is adjacent to the second sub-pixel and the third sub-pixel is adjacent to the fourth sub-pixel and that, in a second direction orthogonal to the first direction, the first sub-pixel is adjacent to the third sub-pixel and the second sub-pixel is adjacent to the fourth sub-pixel, and