Chemical-mechanical polishing particle and polishing slurry composition comprising same
The present disclosure provides chemical-mechanical polishing (CMP) particles exhibiting a high polishing rate and a high polishing quality of generating few defects or scratches due to their modified surface thereof. The present disclosure also provides a polishing slurry composition including the polishing particles.
1. Chemical-mechanical polishing (CMP) particles comprising:
polishing particles; and
at least one aluminum cluster coated on the surface of each of the polishing particles,
wherein the number of pKa peaks of the polishing particles coated with the at least one aluminum cluster, obtained by a back titration method, is one or more, and one or more of pKa values of the peaks range from 4.3 to 4.9, and
wherein the polishing particles coated with the at least one aluminum cluster have a zeta potential of 40 mV or higher.
2. The CMP particles according to claim 1 , wherein the number of the peaks is 3.
3. The CMP particles according to claim 2 , wherein a peak having the highest pKa value among the three peaks has the greatest peak area.
4. The CMP particles according to claim 1 , wherein the polishing particles comprise silica particles.
5. The CMP particles according to claim 1 , wherein the at least one aluminum cluster comprises at least one selected from the group consisting of [Al(OH)] 2+ , [Al(OH) 2 ] + , [Al 2 (OH) 2 (H 2 O) 8 ] 4+ , [Al 13 O 4 (OH) 24 (H 2 O) 12 ] 7+ , and [Al 2 O 8 Al 28 (OH) 56 (H 2 O) 26 ] 18+ .
6. A polishing slurry composition comprising the CMP particles according to claim 1 , a pH adjuster, and water.
7. The polishing slurry composition according to claim 6 , wherein the CMP particles are present in the slurry composition in an amount of 0.1 wt % to 10 wt %.
8. The polishing slurry composition according to claim 6 , further comprising a peroxy group (—O—O—) as an oxidizing agent.
9. The polishing slurry composition according to claim 6 , further comprising an iron-containing catalyst.