Ceramic electronic component
A ceramic electronic component includes: a body including dielectric layers and internal electrodes; and external electrodes disposed on the body and connected to the internal electrodes, wherein the dielectric layer includes a plurality of dielectric crystal grains, and at least one of the plurality of dielectric crystal grains has a core-double shell structure, the double shell includes a first shell surrounding at least a portion of the core and a second shell surrounding at least a portion of the first shell, the first shell includes a first element, one or more of Sn, Sb, Ge, Si, Ga, In, or Zr, and the second shell includes a second element, one or more of Ca or Sr.
1. A ceramic electronic component comprising:
a body including dielectric layers and internal electrodes; and
external electrodes disposed on the body and connected to the internal electrodes,
wherein the dielectric layer includes a plurality of dielectric crystal grains,
at least one of the plurality of dielectric crystal grains has a core-double shell structure comprising a core and a double shell,
the double shell of the core-double shell structure includes a first shell surrounding at least a portion of the core and a second shell surrounding at least a portion of the first shell,
the first shell includes one or more of a first element selected from the group consisting of Sn, Sb, Ge, Si, Ga, In, and Zr, and
the second shell includes a second element of one or more of Ca or Sr.
2. The ceramic electronic component of claim 1 , wherein C 1 S1 is higher than C 1 S2 and C 1 C , and C 2 S2 is higher than C 2 C and C 2 S1 in which C 1 C , C 1 S1 , and C 1 S2 are concentrations (mol %) of the first element in the core, the first shell, and the second shell, respectively based on a total amount of dielectric crystal grain having the core-double shell structure, and C 2 C , C 2 S1 , and C 2 S2 are concentrations (mol %) of the second element in the core, the first shell, and the second shell, respectively based on a total amount of dielectric crystal grain having the core-double shell structure.
3. The ceramic electronic component of claim 2 , wherein C 1 C is 0.01*C 1 S1 or less, and C 2 C and C 2 S1 are 0.01*C 2 S2 or less.
4. The ceramic electronic component of claim 2 , wherein C 2 S2 /C 1 S1 is 0.1 or more and 1.0 or less.
5. The ceramic electronic component of claim 2 , wherein the first element comprises Sn, and the second element comprises Ca, and
C 2 S2 /C 1 S1 is 0.55 or more and 1.0 or less.
6. The ceramic electronic component of claim 2 , wherein the first element comprises Sn, and the second element comprises Sr, and
C 2 S2 /C 1 S1 is 0.53 or more and 1.0 or less.
7. The ceramic electronic component of claim 1 , wherein LS 2 /LS 1 is 0.1 or more and 1 or less in which LS 1 is a length of the first shell measured at a major axis passing through a center of the core-double shell structure, and LS 2 is a length of the second shell measured at the major axis.
8. The ceramic electronic component of claim 7 , wherein the first element comprises Sn, and the second element comprises Ca, and
S 2 /LS 1 is 0.43 or more and 1 or less.
9. The ceramic electronic component of claim 7 , wherein the first element comprise Sn and the second element is Sr, and
LS 2 /LS 1 is 0.38 or more and 1 or less.
10. The ceramic electronic component of claim 7 , wherein LS 1 is 4 to 100 nm.
11. The ceramic electronic component of claim 7 , wherein LS 2 is 2 to 60 nm.
12. The ceramic electronic component of claim 7 , wherein LC is 10 to 200 nm in which LC is a length of the core measured at the major axis passing through the center of the core-double shell structure.
13. The ceramic electronic component of claim 1 , wherein the core includes BaTiO 3 ,
the first shell includes Ba(Ti, Sn)O 3 , and
the second shell includes one or more of (Ba, Ca)TiO 3 and (Ba, Sr)TiO 3 .
14. The ceramic electronic component of claim 1 , wherein a content of the first element included in the first shell is 0.5 to 5 mol % based on a total amount of the core-double shell structure, and
a content of the second element included in the second shell is 0.5 to 5 mol % based on a total amount of the core-double shell structure.
15. The ceramic electronic component of claim 1 , wherein in the core-double shell structure, the first shell is disposed to cover 90 area % or more of a surface of the core, and
the second shell is disposed to cover 90 area % or more of a surface of the first shell.
16. The ceramic electronic component of claim 1 , wherein at least one of the plurality of dielectric crystal grains has a core-shell structure.
17. The ceramic electronic component of claim 1 , wherein a ratio of a number of dielectric crystal grains having the core-double shell structure to a number of dielectric crystal grains in the dielectric component is 50% or more.
18. The ceramic electronic component of claim 1 , wherein an average grain size of the dielectric crystal grains of the dielectric layer is 50 nm or more and 300 nm or less.
19. The ceramic electronic component of claim 1 , wherein an average thickness of the dielectric layer is 0.55 μm or less.
20. The ceramic electronic component of claim 1 , wherein an average thickness of the internal electrode is 0.45 μm or less.
21. The ceramic electronic component of claim 1 , wherein a concentration (mol %) of Sn in the first shell is more than twice of a concentration (mol %) of Sn in the core.
22. The ceramic electronic component of claim 1 , wherein a concentration (mol %) of Ca in the second shell is more than twice of a concentration (mol %) of Ca in the core.
23. The ceramic electronic component of claim 1 , wherein a concentration (mol %) of Sr in the second shell is more than twice of a concentration (mol %) of sr in the core.
24. A dielectric crystal grain having a core-double shell structure, wherein the core-double shell structure includes a core, a first shell dispose at least a portion of the core, and a second shell dispose at a portion of the first shell,
the core includes BaTiO 3 ,
the first shell includes one or more of a first element selected from the group consisting of Sn, Sb, Ge, Si, Ga, In, and Zr, and
the second shell includes a second element of Ca or Sr.
25. The ceramic electronic component of claim 24 , wherein C 1 S1 is higher than C 1 S2 and C 1 C , and C 2 S2 is higher than C 2 C and C 2 S1 in which C 1 C , C 1 S1 , and C 1 S2 are concentrations (mol %) of the first element in the core, the first shell, and the second shell, respectively based on a total amount of dielectric crystal grain having the core-double shell structure, and C 2 C , C 2 S1 , and C 2 S2 are concentrations (mol %) of the second element in the core, the first shell, and the second shell, respectively based on a total amount of dielectric crystal grain having the core-double shell structure.
26. The ceramic electronic component of claim 24 , wherein the first element comprises Sn.
27. The ceramic electronic component of claim 24 , wherein the second element is Ca.
28. The dielectric crystal grain of claim 24 , wherein
the first shell includes Ba(Ti, Sn)O 3 , and
the second shell includes one or more of (Ba, Ca)TiO 3 and (Ba, Sr)TiO 3 .
29. The dielectric crystal grain of claim 24 , wherein a content of the first element included in the first shell is 0.5 to 5 mol % based on a total amount of the core-double shell structure, and
a content of the second element included in the second shell is 0.5 to 5 mol % based on a total amount of the core-double shell structure.
30. A ceramic electronic component comprising:
a body including dielectric layers and internal electrodes; and
external electrodes disposed on the body and connected to the internal electrodes,
wherein the dielectric layer includes a plurality of dielectric crystal grains,
at least one of the plurality of dielectric crystal grains has a core-double shell structure comprising a core and a double shell,
the double shell of the core-double shell structure includes a first shell surrounding at least a portion of the core and a second shell surrounding at least a portion of the first shell,
the first shell includes one or more of a first element selected from the group consisting of Sn, Sb, Ge, Si, Ga, In, and Zr, and
a concentration (mol %) of the first element in the first shell is more than twice of a concentration (mol %) of the first element in the core.
31. The ceramic electronic component of claim 30 , wherein the second shell includes a second element of Ca, and
a concentration (mol %) of Ca in the second shell is more than twice of a concentration (mol %) of Ca in the core.
32. The ceramic electronic component of claim 30 , wherein the second shell includes a second element of Sr, and
a concentration (mol %) of Sr in the second shell is more than twice of a concentration (mol %) of Sr in the core.
33. The ceramic electronic component of claim 30 , wherein LS 2 /LS 1 is 0.1 or more and 1 or less in which LS 1 is a length of the first shell measured at a major axis passing through a center of the core-double shell structure, and LS 2 is a length of the second shell measured at the major axis.
34. The ceramic electronic component of claim 33 , wherein LS 1 is 4 to 100 nm.
35. The ceramic electronic component of claim 33 , wherein LS 2 is 2 to 60 nm.
36. The ceramic electronic component of claim 33 , wherein LC is 10 to 200 nm in which LC is a length of the core measured at the major axis passing through the center of the core-double shell structure.
37. The ceramic electronic component of claim 30 , wherein the core includes BaTiO 3 ,
the first shell includes Ba(Ti, Sn)O 3 , and
the second shell includes one or more of (Ba, Ca)TiO 3 and (Ba, Sr)TiO 3 .
38. The ceramic electronic component of claim 30 , wherein the first element includes Sn, and
a concentration (mol %) of Sn in the first shell is more than twice of a concentration (mol %) of Sn in the core.