Stacked semiconductor device and method
A semiconductor device and a method of forming the same are provided. The semiconductor device includes a first substrate, a capacitor within the first substrate, a diode structure within the first substrate adjacent the capacitor, and a first interconnect structure over the capacitor and the diode structure. A first conductive via of the first interconnect structure electrically couples the capacitor to the diode structure.
1. A method comprising:
forming a capacitor in a first substrate;
forming a diode structure in the first substrate adjacent the capacitor; and
forming a first interconnect structure over the capacitor and the diode structure, wherein a first conductive via of the first interconnect structure electrically couples the capacitor to the diode structure.
2. The method of claim 1 , wherein the first substrate is a p-type substrate, and wherein forming the diode structure comprises implanting n-type impurities into the first substrate to form a first n-type well in the first substrate.
3. The method of claim 2 , wherein forming the diode structure further comprises implanting p-type impurities into the first n-type well to form a p-type well in the first n-type well.
4. The method of claim 3 , wherein forming the diode structure further comprises implanting n-type impurities into the p-type well to form a second n-type well in the p-type well.
5. The method of claim 1 , further comprising forming a second interconnect structure over a second substrate.
6. The method of claim 5 , further comprising bonding the first interconnect structure to the second interconnect structure.
7. A method comprising:
forming one or more trenches in a first substrate;
forming a capacitor in the one or more trenches, the capacitor comprising a lower electrode and an upper electrode;
forming a diode structure within the first substrate; and
forming a first interconnect structure over the diode structure and the capacitor, wherein forming the first interconnect structure comprises:
forming a first dielectric layer over the diode structure and the capacitor; and
forming a first interconnect line over the first dielectric layer, wherein the first interconnect line is coupled to the diode structure and a first one of the lower electrode and the upper electrode.
8. The method of claim 7 , wherein the first substrate is an n-type substrate, and wherein forming the diode structure comprises forming a first p-type well within the first substrate.
9. The method of claim 8 , wherein forming the diode structure further comprises forming an n-type well within the first p-type well.
10. The method of claim 9 , wherein forming the diode structure further comprises forming a second p-type well within the n-type well.
11. The method of claim 7 , wherein forming the first interconnect structure further comprises:
forming a second interconnect line over the first dielectric layer, wherein the second interconnect line is coupled to a second one of the lower electrode and the upper electrode.
12. The method of claim 7 , wherein forming the first interconnect structure further comprises:
forming a second interconnect line, wherein the second interconnect line is coupled to a second one of the lower electrode and the upper electrode, wherein the second interconnect line is in a different metallization layer than the first interconnect line.
13. The method of claim 7 , wherein the first interconnect line is coupled to the diode structure by a first conductive via, wherein the first conductive via is in physical contact with an upper surface of the diode structure.
14. A method comprising:
forming a first interconnect structure, forming the first interconnect structure comprising:
forming a diode structure on a first side of a first substrate;
forming a capacitor on the first side of the first substrate, wherein the capacitor comprises a lower electrode and an upper electrode;
forming a first interconnect line electrically coupling the upper electrode of the capacitor to the diode structure; and
forming an upper insulating layer over the first interconnect line;
bonding an integrated circuit die to upper insulating layer of the first interconnect structure; and
forming a through via from a second side of the first substrate to the first interconnect line.
15. The method of claim 14 , wherein forming the capacitor comprises forming the capacitor in a trench in the first substrate.
16. The method of claim 14 , wherein the capacitor is adjacent the capacitor in the first substrate.
17. The method of claim 14 , wherein forming the first interconnect structure further comprises:
forming a second interconnect line and the first interconnect line in a same metallization layer, wherein the second interconnect line is electrically coupled to the lower electrode of the capacitor.
18. The method of claim 16 , wherein the first substrate is a p-type substrate, and wherein forming the diode structure comprises implanting n-type impurities into the first substrate to form a first n-type well in the first substrate.
19. The method of claim 18 , wherein forming the diode structure further comprises implanting p-type impurities into the first n-type well to form a p-type well in the first n-type well.
20. The method of claim 14 , further comprising:
forming a second interconnect structure over the first substrate, wherein the first substrate is between the first interconnect structure and the second interconnect structure.