Preparation method for solar cell back electrode and application thereof

1. A preparation method for a solar cell back electrode, comprising:

printing or spraying a layer of conductive barrier layer paste on back-side aluminum paste;

directly printing the conductive barrier layer paste on a back-side aluminum electrode;

after drying, printing back-side silver paste in coordination on the conductive barrier layer paste; and

after drying and sintering, forming the solar cell back electrode.

2. The preparation method for the solar cell back electrode of claim 1 , wherein the conductive barrier layer paste comprises the following components:

20 to 80 parts by weight of metal nitride powder, nitrogen-silicon compound powder, oxide powder or low-melting-point metal powder in total;

0.5 to 5 parts by weight of lead-free glass powder;

10 to 40 parts by weight of organic binder; and

0.1 to 1 part by weight of organic additives.

3. The preparation method for the solar cell back electrode of claim 1 , wherein the back-side silver paste in coordination comprises the following components:

5 to 60 parts by weight of hollow spherical silver powder with purity greater than 99.99% under special requirements;

5 to 30 parts by weight of flaky silver powder;

0.5 to 5 parts by weight of lead-free glass powder;

10 to 50 parts by weight of organic binder; and

0.1 to 1 part by weight of organic additives,

wherein a grain size D50 of the hollow spherical silver powder is 5 μm to 20 μm, and a grain size D50 of the flaky silver powder is 2 μm to 30 μm.

4. The preparation method for the solar cell back electrode of claim 2 , wherein

the metal nitride powder comprises one or more of ZrN, TiN, TaN, MoN and CaN, with a grain size D50 being 0.1 μm to 10 μm;

the nitrogen-silicon compound powder comprises one or more of SiNx, BNx and VNx, with a grain size D50 being 0.3 μm to 15 μm; and

the oxide powder comprises one or more of Al 2 O 3 , SiO 2 , TiO 2 , ZrO, SnO 2 , MoO 2 , CaO and NiO, with a grain size D50 being 0.3 μm to 15 μm.

5. The preparation method for the solar cell back electrode of claim 2 , wherein the lead-free glass powder is prepared by: melting several of Bi 2 O 3 , B 2 O 3 , ZnO, TeO 2 , SiO 2 , MnO 2 , CaO, Al 2 O 3 , CuO, SrO and BaO in parts by weight, with a grain size D50 being controlled at 0.7 μm to 5 μm and a softening point being adjustable within a range from 500° C. to 700° C.

6. The preparation method for the solar cell back electrode of claim 2 , wherein the organic binder comprises the following components:

1 to 30 parts by weight of organic resin;

50 to 90 parts by weight of organic solvent; and

0.5 to 10 parts by weight of organic additives.

7. The preparation method for the solar cell back electrode of claim 3 , wherein the lead-free glass powder is prepared by melting several of Bi 2 O 3 , B 2 O 3 , SiO 2 , Na 2 O, MnO 2 , CaO, Al 2 O 3 , CuO, ZnO, SrO, BaO and TeO 2 , with a grain size D50 being controlled at 0.3 μm to 3 μm and a softening point being adjustable within a range from 400° C. to 600° C.

8. The preparation method for the solar cell back electrode of claim 3 , wherein the organic binder comprises the following components:

0.5 to 20 parts by weight of organic resin;

40 to 90 parts by weight of organic solvent; and

0.5 to 10 parts by weight of organic additives.

9. The preparation method for the solar cell back electrode of claim 1 , comprising:

directly spraying or printing the conductive barrier layer paste on the back-side aluminum paste; and

adjusting optionally a solar cell back electrode width and a printed pattern,

wherein a thickness of the conductive barrier layer paste is about 1 μm to 5 μm; and

the conductive barrier layer has a bidirectional barrier function, which not only prevents a mutual diffusion between aluminum and silver, but also prevents a mutual diffusion between the silver and silicon.

10. A method of applying the preparation method for the solar cell back electrode of claim 1 , comprising:

applying the preparation method for the solar cell back electrode to Passivated Emitter and Rear Contact cell back electrodes, full-area aluminum back surface field cells or cells with a high back side passivation degree, sensitive and thin passivation layers which can be damaged easily, or mainstream passivation layers such as SiNx, Al 2 O 3 and SiO 2 .