Quantum dot device and display device
A quantum dot device includes: a first electrode and a second electrode facing each other; a quantum dot layer between the first electrode and the second electrode, and an electron auxiliary layer between the quantum dot layer and the second electrode, the electron auxiliary layer including a first nanoparticle and a second nanoparticle which is larger than the first nanoparticle, wherein a work function of the first electrode is greater than a work function of the second electrode, and wherein a difference between a lowest unoccupied molecular orbital energy level of the quantum dot layer and a lowest unoccupied molecular orbital energy level of the electron auxiliary layer is less than about 1.1 electronvolts.
1. A quantum dot device, comprising:
a first electrode and a second electrode facing each other, a work function of the first electrode being greater than a work function of the second electrode;
a quantum dot layer between the first electrode and the second electrode, the quantum dot layer comprising a blue light-emitting cadmium-free quantum dot; and
an electron auxiliary layer between the quantum dot layer and the second electrode, the electron auxiliary layer being a single electron auxiliary layer comprising a mixture of a first nanoparticle and a second nanoparticle, each of the first nanoparticle and the second nanoparticle being a zinc-containing oxide, and
wherein a lowest unoccupied molecular orbital energy level of the electron auxiliary layer is greater than a lowest unoccupied molecular orbital energy level of the quantum dot layer, and a difference between the lowest unoccupied molecular orbital energy level of the quantum dot layer and the lowest unoccupied molecular orbital energy level of the electron auxiliary layer is less than about 1.1 electronvolts.
2. The quantum dot device of claim 1 , wherein an average particle size of the second nanoparticle is larger than an average particle size of the first nanoparticle.
3. The quantum dot device of claim 2 , wherein
the average particle size of the first nanoparticle is in a range from about 1.5 nanometers to about 3.3 nanometers, and
the average particle size of the second nanoparticle is in a range from about 3.5 nm to about 5 nanometers.
4. The quantum dot device of claim 1 , wherein
the first nanoparticle is represented by Zn 1-x M x O (wherein, M is Mg, Ca, Zr, W, Li, Ti, or a combination thereof, and 0.01≤x<0.5), and
the second nanoparticle is ZnO.
5. The quantum dot device of claim 1 , wherein the lowest unoccupied molecular orbital energy level of the quantum dot layer is in a range from about 2.5 electronvolts to about 3.6 electronvolts, and a bandgap energy of the quantum dot layer is in a range from about 2.4 electronvolts to about 2.9 electronvolts.
6. The quantum dot device of claim 5 ,
the quantum dot comprises indium, zinc, and phosphorus, and
a mole ratio of the zinc relative to the indium is greater than or equal to about 25:1.
7. The quantum dot device of claim 5 , wherein the quantum dot comprises zinc, tellurium, and selenium.
8. The quantum dot device of claim 7 , wherein
the quantum dot comprises a core comprising zinc, tellurium, and selenium, and
a shell on at least a part of the core, the shell having a different composition than that of the core.
9. The quantum dot device of claim 8 , wherein the shell comprises ZnSeS, ZnS, or a combination thereof.
10. A display device comprising the quantum dot device of claim 1 .
11. A quantum dot device, comprising:
a first electrode and a second electrode facing each other, a work function of the first electrode being greater than a work function of the second electrode;
a quantum dot layer between the first electrode and the second electrode, the quantum dot layer comprising a blue light-emitting cadmium-free quantum dot; and
an electron auxiliary layer between the quantum dot layer and the second electrode,
wherein the electron auxiliary layer comprises
a first electron auxiliary layer close to the quantum dot layer between the quantum dot layer and the second electrode, the first electron auxiliary layer comprising a first nanoparticle, and
a second electron auxiliary layer close to the second electrode between the quantum dot layer and the second electrode, the second electron auxiliary layer comprising a second nanoparticle,
each of the first nanoparticle and the second nanoparticle is a zinc-containing oxide,
a lowest unoccupied molecular orbital energy level of the first electron auxiliary layer is less than a lowest unoccupied molecular orbital energy level of the second electron auxiliary layer, and
the lowest unoccupied molecular orbital energy level of the first electron auxiliary layer is greater than a lowest unoccupied molecular orbital energy level of the quantum dot layer.
12. The quantum dot device of claim 11 , wherein an average particle size of the second nanoparticle is larger than an average particle size of the first nanoparticle.
13. The quantum dot device of claim 12 , wherein
the average particle size of the first nanoparticle is in a range from about 1.5 nanometers to about 3.3 nanometers, and
the average particle size of the second nanoparticle is in a range from about 3.5 nm to about 5 nanometers.
14. The quantum dot device of claim 11 , wherein
the first nanoparticle is represented by Zn 1-x M x O (wherein, M is Mg, Ca, Zr, W, Li, Ti, or a combination thereof, and 0.01≤x<0.5), and
the second nanoparticle is ZnO.
15. The quantum dot device of claim 11 , wherein the lowest unoccupied molecular orbital energy level of the quantum dot layer is in a range from about 2.5 electronvolts to about 3.6 electronvolts, and
a difference between the lowest unoccupied molecular orbital energy level of the quantum dot layer and the lowest unoccupied molecular orbital energy level of the first electron auxiliary layer being less than about 1.1 eV.
16. The quantum dot device of claim 15 , wherein the quantum dot comprises zinc, tellurium, and selenium.
17. The quantum dot device of claim 16 , wherein
the quantum dot comprises a core comprising zinc, tellurium, and selenium, and
a shell on at least a part of the core, the shell having a different composition than that of the core.
18. The quantum dot device of claim 17 , wherein the shell comprises ZnSeS, ZnS, or a combination thereof.
19. The quantum dot device of claim 15 ,
the quantum dot comprises indium, zinc, and phosphorus, and
a mole ratio of the zinc relative to the indium is greater than or equal to about 25:1.
20. A display device comprising the quantum dot device of claim 11 .