Temperature-based bandgap reference circuit
Circuits, systems, and methods to switch modes based on temperature and to provide reference voltages are discussed herein. For example, a bandgap reference circuit may include one or more impedance elements and one or more switches coupled to the one or more impedance elements. The one or more switches may be controllable based on a temperature signal. The bandgap reference circuit may be configured to provide a bandgap reference voltage that is associated with less than a particular amount of voltage variation.
1. A bandgap reference system comprising:
a first bandgap reference circuit coupled to a low dropout regulator and configured to provide a first bandgap reference voltage to the low dropout regulator; and
a second bandgap reference circuit coupled to the low dropout regulator and including one or more impedance elements and one or more switches coupled to the one or more impedance elements, the one or more switches being controllable based at least in part on a temperature signal that is associated with a temperature, the second bandgap reference circuit being configured to provide a second bandgap reference voltage at an output node based at least in part on one or more currents that pass through the one or more impedance elements, the one or more impedance elements and the one or more switches being coupled between the output node and a ground.
2. The bandgap reference system of claim 1 wherein the first bandgap reference circuit is associated with a first amount of reference voltage variation over a temperature range and the second bandgap reference circuit is associated with a second amount of reference voltage variation over the temperature range, the second amount of reference voltage variation being less than the first amount of reference voltage variation.
3. The bandgap reference system of claim 1 further comprising a temperature circuit configured to receive a regulated voltage from the low dropout regulator and output the temperature signal.
4. The bandgap reference system of claim 1 further comprising an analog-to-digital converter configured to receive the temperature signal, convert the temperature signal, and provide the converted temperature signal to the second bandgap reference circuit.
5. The bandgap reference system of claim 1 wherein the second bandgap reference circuit includes a current generation circuit configured to generate a Proportional-to-Absolute-Temperature (PTAT) current and provide the PTAT current to a node.
6. The bandgap reference system of claim 5 wherein the second bandgap reference circuit includes an input bandgap circuit coupled to the node, the input bandgap circuit configured to receive an input bandgap reference voltage from the first bandgap reference circuit, convert the input bandgap reference voltage to an input bandgap reference current, and provide a first current to the node based at least in part on the temperature signal, the first current being associated with the input bandgap reference current.
7. The bandgap reference system of claim 6 wherein the one or more currents are based at least in part on the PTAT current and the first current.
8. The bandgap reference system of claim 1 wherein the one or more switches include one or more transistors.
9. The bandgap reference system of claim 1 further comprising the low dropout regulator coupled to the first bandgap reference circuit, the low dropout regulator configured to receive the first bandgap reference voltage and provide a regulated voltage based at least in part on the first bandgap reference voltage.
10. A bandgap reference circuit comprising:
an input bandgap circuit coupled to a node, the input bandgap circuit being configured to receive an input bandgap reference signal from another bandgap reference circuit and provide a first current to the node, the first current being associated with the input bandgap reference signal; and
a reference circuit coupled to the node and including a first impedance element, a second impedance element, and a switch coupled to the first impedance element, the switch being selectively enabled, based at least in part on a temperature signal, to allow current flow through the first impedance element, the reference circuit being configured to receive a second current via the node and provide an output bandgap reference signal based at least in part on the second current passing through at least one of the first impedance element or the second impedance element.
11. The bandgap reference circuit of claim 10 wherein the bandgap reference circuit is associated with a first amount of reference voltage variation over a temperature range and the other bandgap reference circuit is associated with a second amount of reference voltage variation over the temperature range, the first amount of reference voltage variation being less than the second amount of reference voltage variation.
12. The bandgap reference circuit of claim 10 wherein the input bandgap circuit includes a voltage-to-current circuit to receive the input bandgap reference signal from the other bandgap reference circuit and generate an input bandgap reference current based at least in part on the input bandgap reference signal.
13. The bandgap reference circuit of claim 12 wherein the input bandgap circuit includes a current digital-to-analog converter to receive the input bandgap reference current from the voltage-to-current circuit, generate the first current based at least in part on the input bandgap reference current, and provide the first current to the node.
14. The bandgap reference circuit of claim 13 wherein the switch is a transistor.
15. The bandgap reference circuit of claim 14 further comprising a start-up circuit configured to receive a voltage from a low dropout regulator and power-up the bandgap reference circuit based at least in part on the received voltage, the received voltage being based at least in part on the input bandgap reference signal from the other bandgap reference circuit.
16. The bandgap reference circuit of claim 10 wherein the second current includes a Proportional-to-Absolute Temperature (PTAT) current and the first current.
17. A radio-frequency module comprising:
a packaging substrate configured to receive a plurality of components; and
a semiconductor die mounted on the packaging substrate, the semiconductor die including a bandgap reference circuit that includes an input bandgap circuit coupled to a node and a reference circuit coupled to the node, the input bandgap circuit configured to receive an input bandgap reference signal associated with another bandgap reference circuit and provide a first current to the node, the first current being associated with the input bandgap reference signal, the reference circuit including one or more impedance elements and one or more switches coupled to the one or more impedance elements, the one or more impedance elements and the one or more switches being coupled between the node and a ground, the one or more switches being controllable based at least in part on a temperature signal, the reference circuit being configured to receive a second current via the node and provide an output bandgap reference signal based at least in part on the second current.
18. The radio-frequency module of claim 17 further comprising the other bandgap reference circuit configured to provide the input bandgap reference signal.
19. The radio-frequency module of claim 18 further comprising a low dropout regulator coupled to the other bandgap reference circuit, the low dropout regulator configured to receive the input bandgap reference signal and provide a regulated voltage based at least in part on the input bandgap reference signal.
20. The radio-frequency module of claim 19 further comprising a temperature circuit coupled to the low dropout regulator, the temperature circuit configured to receive the regulated voltage and output the temperature signal.