Automated voltage demarcation (VDM) adjustment for memory device
A system can include a memory devices and a processing device coupled with the memory devices. The processing device can receive a command and determine whether the command includes a value for a voltage associated with a read at the memory device. The processing device can also, responsive to the command failing to specify the value, select a second value, from multiple values, for the voltage associated with the read at the memory device based at on a duration subsequent to a previous write operation satisfying a threshold criterion. The processing device can also apply the voltage having the second value at memory cells of the memory device to determine a logic state for the memory cells.
1. A system comprising:
a memory device; and
a processing device, operatively coupled with the memory device, to perform operations comprising:
receiving a memory access command with respect to a set of memory cells of the memory device;
determining whether the memory access command specifies a first voltage demarcation (VDM) value;
responsive to determining that the memory access command does not specify the first VDM value, determining a period of time elapsed since a most recent write operation performed with respect to the set of memory cells;
responsive to determining that the period of time is below a first threshold period of a plurality of periods, comparing the period of time to a second threshold period of the plurality of periods, wherein the first threshold period is a highest threshold period of the plurality of periods;
responsive to determining that the period of time exceeds the second threshold period, selecting a second VDM value of a plurality of predefined VDM values corresponding to respective threshold periods, wherein the second VDM value corresponds to the second threshold period; and
utilizing the second VDM value for performing a memory access operation specified by the memory access command.
2. The system of claim 1 , wherein the operations further comprise:
responsive to determining that the memory access command specifies the first VDM value, utilizing the first VDM value for performing a memory access operation specified by the memory access command.
3. The system of claim 1 , wherein the operations further comprise:
determining whether a register stores a first configuration or a second configuration, wherein selecting the second VDM is performed responsive to determining the register stores the first configuration.
4. The system of claim 3 , wherein the operations further comprise:
responsive to determining the register stores the second configuration, selecting a default VDM value.
5. The system of claim 1 , wherein determining the time elapsed since the most recent write operation further comprises:
storing a first time value associated with performing a previous write operation at the memory device; and
calculating a difference between a current time value and the first time value.
6. The system of claim 5 , wherein the operations further comprise:
receiving a second memory access command to perform a write operation;
storing a third time value associated with performing the write operation corresponding to the second memory access command; and
calculating a difference between the current time value and the third time value.
7. The system of claim 1 , wherein the operations further comprise:
receiving a second memory access command;
determining whether the second memory access command specifies a third VDM value;
responsive to determining that the memory access command does not specify the third VDM value, selecting, based on a second period of time elapsed since the most recent write operation performed with respect to the set of memory cells, a fourth VDM value from the plurality of predefined VDM values; and
utilizing the fourth VDM value for performing a second memory access operation specified by the second memory access command.
8. The system of claim 1 , wherein the memory access command is one of: a read command or a write command.
9. A method, comprising:
receiving a memory access command with respect to a set of memory cells of a memory device;
determining whether the memory access command specifies a first voltage demarcation (VDM) value;
responsive to determining that the memory access command does not specify the first VDM value, determining a period of time elapsed since a most recent write operation performed with respect to the set of memory cells;
responsive to determining that the period of time is below a first threshold period of a plurality of periods, comparing the period of time to a second threshold period of the plurality of periods, wherein the first threshold period is a highest threshold period of the plurality of periods;
responsive to determining that the period of time exceeds the second threshold period, selecting a second VDM value of a plurality of predefined VDM values corresponding to respective threshold periods, wherein the second VDM value corresponds to the second threshold period; and
utilizing the second VDM value for performing a memory access operation specified by the memory access command.
10. The method of claim 9 , further comprising:
responsive to determining that the memory access command specifies the first VDM value, utilizing the first VDM value for performing a memory access operation specified by the memory access command.
11. The method of claim 9 , further comprising:
determining whether a register stores a first configuration or a second configuration, wherein selecting the second VDM value is performed responsive to determining the register stores the first configuration.
12. The method of claim 11 , further comprising:
responsive to determining the register stores the second configuration, selecting a default VDM value.
13. The method of claim 9 , wherein to determine a duration subsequent to a previous write operation, the method further comprises:
storing a first time value associated with performing the previous write operation at the memory device; and
calculating a difference between a current time value and the first time value.
14. The method of claim 13 , further comprising:
receiving a second memory access command to perform a write operation;
storing a third time value associated with performing the write operation corresponding to the second memory access command; and
calculating a difference between the current time value and the third time value.
15. The method of claim 9 , further comprising:
receiving a second memory access command;
determining whether the second memory access command specifies a third VDM value;
responsive to determining that the memory access command does not specify the third VDM value, selecting, based on a second period of time elapsed since the most recent write operation performed with respect to the set of memory cells, a fourth VDM value from the plurality of predefined VDM values; and
utilizing the fourth VDM value for performing a second memory access operation specified by the second memory access command.
16. The method of claim 9 , wherein the command is one of: a read command or a write command.
17. A non-transitory computer readable medium comprising instructions, which when executed by a processing device, cause the processing device to perform operations comprising:
receive a memory access command with respect to a set of memory cells of a memory device;
determining whether the memory access command specifies a first voltage demarcation (VDM) value;
responsive to determining that the memory access command does not specify the first VDM value, determining a period of time elapsed since a most recent write operation performed with respect to the set of memory cells;
responsive to determining that the period of time is below a first threshold period of a plurality of periods, comparing the period of time to a second threshold period of the plurality of periods, wherein the first threshold period is a highest threshold period of the plurality of periods;
responsive to determining that the period of time exceeds the second threshold period, selecting a second VDM value of a plurality of predefined VDM values corresponding to respective threshold periods, wherein the second VDM value corresponds to the second threshold period; and
utilizing the second VDM value for performing a memory access operation specified by the memory access command.
18. The non-transitory computer readable medium of claim 17 , wherein the operations further comprise:
responsive to determining that the memory access command specifies the first VDM value, utilizing the first VDM value for performing a memory access operation specified by the memory access command.
19. The non-transitory computer readable medium of claim 17 , wherein the operation further comprise:
determining whether a register stores a first configuration or a second configuration, wherein selecting the second VDM value is performed responsive to determining the register stores the first configuration.
20. The non-transitory computer readable medium of claim 19 , wherein the operations further comprise:
responsive to determining the register stores the second configuration, selecting a default VDM value.