Compact FINFET CMOS

1. A compact CMOS structure comprising a region of material in a semiconductor substrate, said region of said semiconductor substrate not requiring the presence of N and P-type wells, which material forms rectifying junctions with both field induced N and P-type semiconductor,

said compact CMOS structure further comprising at least two channels projecting from electrical contact with said region of material in a semiconductor substrate which forms rectifying junctions with both field induced N and P-type semiconductor, said channels being substantially parallel and adjacent to one another;

said compact CMOS structure further comprising a gate structure offset with respect to said channels by insulating material;

said compact CMOS structure further comprising substantially non-rectifying junctions to said material which forms rectifying junctions with both field induced N and P-type semiconductor, and to distal ends of said at least two channels;

such that in use a voltage is applied between the substantially non-rectifying junctions at the distal ends of said at least two channels and a voltage is applied to said gate which, when switched between the voltages applied to the substantially non-rectifying distal ends of said at least two channels, causes a voltage to appear at the substantially non-rectifying junction to said region of material which forms rectifying junctions with both field induced N and P-type semiconductor which is inverted, in that when the higher of said voltages applied to the substantially non-rectifying junctions to said distal ends of said at least two channels is applied to said gate, the voltage at the substantially non-rectifying junction to said region of material which forms rectifying junctions with both field induced N and P-type semiconductor is low, and vice-versa.

2. A compact CMOS structure as in claim 1 , wherein the at least two channels are silicon, and the region of material which forms rectifying junctions with both field induced N and P-type semiconductor is chromium disilicide.

3. A compact CMOS structure as in claim 1 , in which the gate is a composite of metal and non-metal components.

4. A compact FINFET CMOS structure comprising a region of material in a semiconductor substrate, said region of said semiconductor substrate not requiring the presence of N and P-type wells, which material forms rectifying junctions with both field induced N and P-type semiconductor,

said compact CMOS structure further comprising at least two FIN channels projecting from electrical contact with said region of material in a semiconductor substrate which forms rectifying junctions with both field induced N and P-type semiconductor, said FIN channels being substantially parallel and adjacent to one another;

said compact FINFET CMOS structure further comprising a gate structure offset with respect to said FIN channels by insulating material;

said compact FINFET CMOS structure further comprising substantially non-rectifying junctions to said material which forms rectifying junctions with both field induced N and P-type semiconductor, and to distal ends of said at least two FIN channels;

such that in use a voltage is applied between the substantially non-rectifying junctions at the distal ends of said at least two FIN channels and a voltage is applied to said gate which, when switched between the voltages applied to the substantially non-rectifying distal ends of said at least two FIN channels, causes a voltage to appear at the substantially non-rectifying junction to said region of material which forms rectifying junctions with both field induced N and P-type semiconductor which is inverted, in that when the higher of said voltages applied to the substantially non-rectifying junctions to said distal ends of said at least two FIN channels is applied to said gate, the voltage at the substantially non-rectifying junction to said region of material which forms rectifying junctions with both field induced N and P-type semiconductor is low, and vice-versa.

5. A compact CMOS structure comprising a region of material in a semiconductor substrate, said region of said semiconductor substrate not requiring the presence of N and P-type wells, which material forms rectifying junctions with both field induced N and P-type semiconductor,

said compact CMOS structure further comprising at least two channels or fins projecting from electrical contact with said region of material in a semiconductor substrate which forms rectifying junctions with both field induced N and P-type semiconductor, said channels or fins being substantially parallel and adjacent to one another;

said compact CMOS structure further comprising a gate structure offset with respect to said channels or fins by insulating material;

said compact CMOS structure further comprising substantially non-rectifying junctions to said material which forms rectifying junctions with both field induced N and P-type semiconductor, and to distal ends of said at least two channels or fins;

such that in use a voltage is applied between the substantially non-rectifying junctions at the distal ends of said at least two channels or fins and a voltage is applied to said gate which, when switched between the voltages applied to the substantially non-rectifying distal ends of said at least two channels or fins, causes a voltage to appear at the substantially non-rectifying junction to said region of material which forms rectifying junctions with both field induced N and P-type semiconductor which is inverted, in that when the higher of said voltages applied to the substantially non-rectifying junctions to said distal ends of said at least two channels or fins is applied to said gate, the voltage at the substantially non-rectifying junction to said region of material which forms rectifying, junctions with both field induced N and P-type semiconductor is low, and vice-versa

wherein the at least two channels or fins are silicon, and the region of material which forms rectifying junctions with both field induced N and P-type semiconductor is chromium disilicide.

6. A compact CMOS structure formed in a semiconductor substrate by:

a) selecting a semiconductor substrate, identifying insulating material, and identifying material that forms rectifying junctions with both N and P-type field induced doping in said semiconductor substrate when present in said semiconductor substrate;

b) fashioning said semiconductor substrate, said insulating material and said material that forms rectifying junctions with both N and P-type field induced doping when said material is present in said semiconductor substrate, to comprise said compact CMOS structure;

said compact CMOS structure being characterized by further comprising two channels projecting from electrical contact with said region of material that forms rectifying junctions with both N and P-type field induced doping in said semiconductor substrate, wherein said channels are substantially parallel and adjacent to one another;

said compact CMOS structure further comprising a gate structure offset with respect to said channels by said insulating material; and

said compact CMOS structure further comprising substantially non-rectifying junctions to said material which forms rectifying junctions with both field induced N and P-type semiconductor, and to distal ends of said two channels;

such that in use a voltage is applied between the substantially non-rectifying junctions at the distal ends of said two channels and a voltage is applied to said gate which, when switched between the voltages applied to the substantially non-rectifying distal ends of said two channels, causes a voltage to appear at the substantially non-rectifying junction to said region of material which forms rectifying junctions with both field induced N and P-type semiconductor which is inverted, in that when the higher of said voltages applied to the substantially non-rectifying junctions to said distal ends of said two channels is applied to said gate, the voltage at the substantially non-rectifying junction to said region of material which forms rectifying junctions with both field induced N and P-type semiconductor is low, and vice-versa.