Amorphization and regrowth of source-drain regions from the bottom-side of a semiconductor assembly
A device is disclosed. The device includes a channel, a first source-drain region adjacent a first portion of the channel, the first source-drain region including a first crystalline portion that includes a first region of metastable dopants, a second source-drain region adjacent a second portion of the channel, the second source-drain region including a second crystalline portion that includes a second region of metastable dopants. A gate conductor is on the channel.
1. A device, comprising: a channel having a top surface; a first source-drain region adjacent a first portion of the channel, the first source-drain region including a first crystalline portion that includes a first region of dopants; a second source-drain region adjacent a second portion of the channel, the second source-drain region including a second crystalline portion that includes a second region of dopants, wherein a part or all of the first crystalline portion and the second crystalline portion includes silicide or germanide, the silicide or germanide on a bottom surface of the first source-drain region and the second source-drain region, the bottom surface of the first source-drain region and the second source-drain region opposite the top surface of the channel; a gate conductor over the top surface of the channel; a first contact beneath the first source-drain region and in contact with the silicide or germanide on the bottom surface of the first source-drain region; and a second contact beneath the second source-drain region and in contact with the silicide or germanide on the bottom surface of the the second source-drain region.
2. The device of claim 1 , further including a third contact connected to the first source-drain region and a fourth contact connected to the second source-drain region, the third contact opposite the first contact, and the fourth contact opposite the second contact.
3. The device of claim 2 , wherein the third contact is on a first side of the gate conductor and the fourth contact is on a second side of the gate conductor.
4. The device of claim 1 , further including a crystalline ring on a periphery of the first crystalline portion and the second crystalline portion.
5. The device of claim 1 , wherein the first crystalline portion and the second crystalline portion includes a dopant concentration gradient.