Semiconductor device
A semiconductor device includes a first area including a logic circuit, a second area including a functional circuit, a first power line, a second power line that supplies a power to the logic circuit and the functional circuit, and a first power switch circuit connected to the first power line and the second power line, wherein the first power switch circuit includes a first transistor larger than a transistor provided in the logic circuit and being connected to the first power line and the second power line, an end cap provided in an area next to the functional circuit, and a second transistor provided between the end cap and an area including the first transistor, the second transistor being of a same size as the transistor provided in the logic circuit and being connected to the first power line and the second power line.
1. A semiconductor device comprising:
a first power line;
a second power line;
an end cap; and
a first power switch circuit that includes a first transistor and a second transistor,
wherein
the first transistor is connected to the first power line and the second power line,
the second transistor is connected to the first power line and the second power line,
the first transistor includes a first number of first fins that are extended in a first direction and arranged in a second direction that is different from the first direction,
the second transistor includes a second number of second fins that are extended in the first direction and arranged in the second direction,
the first number is larger than the second number, and
the second transistor is provided between the end cap and the first transistor in the first direction.
2. The semiconductor device according to claim 1 , wherein the end cap includes the second number of third fins.
3. The semiconductor device according to claim 1 , wherein
the first power switch circuit includes a third transistor that is connected to the first power line and the second power line,
the third transistor includes the second number of fourth fins that are extended in the first direction and arranged in the second direction, and
the third transistor is next to the first transistor in the second direction.
4. The semiconductor device according to claim 1 , further comprising
a logic circuit; and
a functional circuit,
wherein the end cap is provided between the functional circuit and the second transistor in the first direction.
5. The semiconductor device according to claim 4 , wherein the logic circuit includes the second number of fifth fins that are extended in the first direction and arranged in the second direction.
6. The semiconductor device according to claim 1 , wherein
the first power switch circuit includes a fourth transistor that is connected to the first power line and the second power line,
the fourth transistor includes the second number of sixth fins that are extended in the first direction and arranged in the second direction, and
the fourth transistor is provided at an opposite side to the second transistor in the first direction.
7. The semiconductor device according to claim 4 , further comprising
a second power switch circuit that includes a fifth transistor and a sixth transistor,
wherein
the fifth transistor is connected to the first power line and the second power line,
the sixth transistor is connected to the first power line and the second power line,
the fifth transistor includes a third number of seventh fins that are extended in the first direction and arranged in the second direction,
the sixth transistor includes a fourth number of eighth fins that are extended in the first direction and arranged in the second direction,
the third number is larger than the fourth number, and
the sixth transistor is provided between the logic circuit and the fifth transistor in the first direction.
8. The semiconductor device according to claim 7 , wherein the logic circuit includes the fourth number of ninth fins that are extended in the first direction and arranged in the second direction.