Solid-state imaging device including driver circuits comprising multi-stage buffer elements

1. A solid-state imaging device comprising:

a plurality of pixels disposed in a matrix of pixel rows and pixel columns;

a plurality of control wires provided for the pixel rows or the pixel columns, and each connected to at least two pixels out of the plurality of pixels, the at least two pixels being included in one of the pixel rows or the pixel columns for which the control wire is provided;

a plurality of drive circuits that are provided for the plurality of control wires, wherein each of the plurality of drive circuits includes buffer elements in at least two stages, and outputs a control signal to a corresponding one of the plurality of control wires for which the drive circuit is provided, the buffer elements in the at least two stages being connected in series and having output wires; and

a first wire that short-circuits the output wires of the buffer elements in one of the at least two stages in at least two of the plurality of drive circuits, wherein:

each of the plurality of drive circuits further includes:

an input terminal; and

an output terminal,

the input terminal is independently provided for each of the plurality of drive circuits,

the output terminal is independently provided for each of the plurality of drive circuits, and

in each of the plurality of drive circuits, the buffer elements in the at least two stages are provided between the input terminal and the output terminal.

2. The solid-state imaging device according to claim 1 ,

wherein the first wire averages delays of at least two of the plurality of control wires that occur in at least two of the pixel rows or at least two of the pixel columns.

3. The solid-state imaging device according to claim 1 ,

wherein the plurality of pixels include optical black pixels and normal pixels that are not the optical black pixels, and

the first wire has a length longer than a side out of four sides that define an effective region constituted by the normal pixels, the side extending parallel to the first wire.

4. The solid-state imaging device according to claim 1 ,

wherein the plurality of drive circuits include M drive circuit groups into which the plurality of drive circuits are divided, M being an integer greater than or equal to 2, and

the first wire is provided for each of the M drive circuit groups, and short-circuits output wires of the buffer elements in the M drive circuit group.

5. The solid-state imaging device according to claim 4 ,

wherein one of the M drive circuit groups consists of one or more drive circuits that operate in a pixel-thinned operation mode.

6. The solid-state imaging device according to claim 1 ,

wherein the first wire is provided for each of the at least two stages of the buffer elements, excluding a most upstream stage.

7. The solid-state imaging device according to claim 6 ,

wherein the first wire provided for buffer elements in one stage out of the buffer elements in the at least two stages has impedance lower than impedance of the first wire provided for buffer elements in a stage upstream from the one stage out of the buffer elements in the at least two stages.

8. The solid-state imaging device according to claim 6 ,

wherein the first wire provided for buffer elements in one stage out of the buffer elements in the at least two stages has a width greater than a width of the first wire provided for buffer elements in a stage upstream from the one stage out of the buffer elements in the at least two stages.

9. The solid-state imaging device according to claim 1 ,

wherein buffer elements in one stage out of the buffer elements in the at least two stages have drive capability higher than drive capability of buffer elements in a stage upstream from the one stage out of the buffer elements in the at least two stages.

10. The solid-state imaging device according to claim 1 ,

wherein the plurality of pixels each include a photoelectric converter that converts light into charge, and a read electrode for reading the charge from the photoelectric converter, and

the plurality of control wires are each connected to the read electrode in each of the at least two pixels.

11. The solid-state imaging device according to claim 1 ,

wherein the plurality of pixels each include a reset electrode for resetting charge in the pixel, and

the plurality of control wires are each connected to the reset electrode in each of the at least two pixels.

12. The solid-state imaging device according to claim 1 ,

wherein the plurality of pixels each include a photoelectric converter that converts light into charge, a first read electrode for reading the charge from the photoelectric converter, and a reset electrode for resetting the charge in the pixel,

the plurality of control wires provided for the pixel columns each include a first read control wire connected to the first read electrode in each of the at least two pixels, and a reset control wire connected to the reset electrode in each of the at least two pixels, and

the solid-state imaging device includes, for each of the pixel columns, a first drive circuit connected to the first read control wire, and a second drive circuit connected to the reset control wire, the first drive circuit and the second drive circuit being included in the plurality of drive circuits.

13. The solid-state imaging device according to claim 12 ,

wherein the plurality of pixels each further include a second read electrode for reading the charge from the photoelectric converter,

the plurality of control wires provided for the pixel columns each further include a second read control wire connected to the second read electrode in each of the at least two pixels, and

the solid-state imaging device further includes, for each of the pixel columns, a third drive circuit connected to the second read control wire, the third drive circuit being included in the plurality of drive circuits.

14. The solid-state imaging device according to claim 1 , further comprising:

a wire swapper that causes wires in the plurality of drive circuits to cross, to substantially swap between buffer elements in a same stage in the plurality of drive circuits, out of the buffer elements in the at least two stages in each of the plurality of drive circuits.

15. The solid-state imaging device according to claim 14 ,

wherein the wire swapper includes a selection circuit that selects, according to a selection switch signal, drive circuits to be swapped out of the plurality of drive circuits.

16. The solid-state imaging device according to claim 15 ,

wherein two or more wire swappers are provided, the two or more wire swappers each being the wire swapper, and

each of the two or more wire swappers is provided at input wires or output wires of the buffer elements in the at least two stages in the plurality of drive circuits.

17. An imaging apparatus comprising:

the solid-state imaging device according to claim 1 ; and

a signal processing circuit that generates a depth image or a brightness image based on a signal received by the solid-state imaging device.