Display panel and a display device including a pixel circuit and a driver circuit

1. A display panel, comprising:

a base substrate;

a first transistor and a second transistor, wherein the first transistor and the second transistor are formed on the base substrate, wherein the first transistor comprises a first active layer, a first gate, a first source, and a first drain, wherein the first active layer comprises silicon, wherein the second transistor comprises a second active layer, a second gate, a third gate, a second source, and a second drain, and wherein the second active layer comprises an oxide semiconductor, and wherein the second active layer is located on a side of the first active layer facing away from the base substrate; and

a first insulating layer and a second insulating layer, wherein the first insulating layer and the second insulating layer are located on both sides of the second active layer, wherein the first insulating layer is located between the second gate and the second active layer, wherein the second insulating layer is located between the third gate and the second active layer, and wherein a thickness of the first insulating layer is less than a thickness of the second insulating layer,

wherein a concentration of hydrogen in the first insulating layer is higher than a concentration of hydrogen in the second insulating layer; and

wherein the display panel comprises a pixel circuit and a driver circuit providing a driving signal for the pixel circuit, wherein the driver circuit comprises the second transistor, and wherein the pixel circuit or the driver circuit comprises the first transistor.

2. The display panel of claim 1 , further comprising:

a third insulating layer located on a side of the second gate facing away from the base substrate, wherein a concentration of hydrogen in the third insulating layer is lower than the concentration of hydrogen in the first insulating layer, and the first insulating layer is located on a side of the second active layer facing away from the base substrate.

3. The display panel of claim 2 ,

wherein the third gate is located on a side of the second insulating layer facing towards the base substrate, and

wherein the concentration of hydrogen in the third insulating layer is lower than or equal to the concentration of hydrogen in the second insulating layer.

4. The display panel of claim 2 ,

wherein the concentration of hydrogen in the first insulating layer is C1, the concentration of hydrogen in the second insulating layer is C2, and the concentration of hydrogen in the third insulating layer is C3, and

wherein C1≤C2−C3.

5. The display panel of claim 2 ,

wherein a concentration of oxygen in the first insulating layer is lower than a concentration of oxygen in the second insulating layer, and

wherein a ratio of the concentration of oxygen in the first insulating layer to a concentration of silicon in the first insulating layer is A, and a ratio of the concentration of oxygen in the second insulating layer to a concentration of silicon in the second insulating layer is B, wherein A<B.

6. The display panel of claim 5 ,

wherein the concentration of hydrogen in the first insulating layer is C1, and the concentration of hydrogen in the second insulating layer is C2,

wherein C1 (A−1)≤C2×(B1),

wherein a concentration of oxygen to a concentration of silicon in the third insulating layer is C, and

wherein A<C<B.

7. The display panel of claim 6 ,

wherein the concentration of hydrogen in the third insulating layer is C3, and

wherein C2×(C−1)≤C3×(B−1).

8. The display panel of claim 1 ,

wherein the first insulating layer comprises silicon oxide SiO x , and the second insulating layer comprises silicon oxide SiO y , wherein x is a ratio of a number of oxygen to a number of silicon in the first insulating layer, y is a ratio of a number of oxygen to a number of silicon in the second insulating layer, and x<y.

9. The display panel of claim 1 ,

wherein the concentration of hydrogen in the first insulating layer is C1, and the concentration of hydrogen in the second insulating layer is C2, and

wherein C1=n×C2, and 1<n<5.

10. The display panel of claim 1 ,

wherein the first insulating layer is located on a side of the second active layer facing away from the base substrate,

wherein in the first insulating layer, a concentration of hydrogen on a side of the first insulating layer facing towards the second active layer is lower than a concentration of hydrogen on a side of the first insulating layer facing away from the second active layer, and

wherein in the second insulating layer, a concentration of hydrogen on a side of the second insulating layer facing towards the second active layer is lower than a concentration of hydrogen on a side of the second insulating layer facing away from the second active layer.

11. The display panel of claim 1 ,

wherein the pixel circuit comprises a third transistor, wherein the third transistor comprises a third active layer, a third source, a third drain, and a fourth gate, and wherein the third active layer comprises an oxide semiconductor,

wherein the display panel further comprises a fourth insulating layer and a fifth insulating layer, wherein the fourth insulating layer is located on a side of the third active layer facing away from the base substrate and further between the third active layer and the fourth gate, and wherein the fifth insulating layer is located on a side of the third active layer facing towards the base substrate, and

wherein a concentration of hydrogen in the fourth insulating layer is higher than a concentration of hydrogen in the fifth insulating layer.

12. The display panel of claim 11 ,

wherein the third transistor is a switch transistor of the pixel circuit, and wherein the concentration of hydrogen in the first insulating layer is higher than the concentration of hydrogen in the fourth insulating layer.

13. The display panel of claim 11 ,

wherein the third transistor is a drive transistor of the pixel circuit, and wherein the concentration of hydrogen in the first insulating layer is lower than the concentration of hydrogen in the fourth insulating layer.

14. The display panel of claim 11 ,

wherein the pixel circuit comprises a fourth transistor, wherein the fourth transistor comprises a fourth active layer, a fourth source, a fourth drain, and a fifth gate, and wherein the fourth active layer comprises an oxide semiconductor,

wherein the display panel further comprises a sixth insulating layer and a seventh insulating layer, wherein the sixth insulating layer is located on a side of the fourth active layer facing away from the base substrate and further between the fourth active layer and the fifth gate, and wherein the seventh insulating layer is located on a side of the fourth active layer facing towards the base substrate, and

wherein a concentration of hydrogen in the sixth insulating layer is higher than a concentration of hydrogen in the seventh insulating layer.

15. The display panel of claim 14 , wherein the third transistor is a drive transistor of the pixel circuit, and the fourth transistor is a switch transistor of the pixel circuit, and

wherein the concentration of hydrogen in the fourth insulating layer is higher than the concentration of hydrogen in the sixth insulating layer.

16. A display device, comprising the display panel according to claim 1 .

17. A display panel, comprising:

a second transistor, wherein the second transistor comprises a second active layer, a second gate, a third gate, a second source, and a second drain, and wherein the second active layer comprises an oxide semiconductor; and

a first insulating layer and a second insulating layer, wherein the first insulating layer and the second insulating layer are located on both sides of the second active layer, wherein the first insulating layer is located between the second gate and the second active layer, wherein the second insulating layer is located between the third gate and the second active layer, and wherein a thickness of the first insulating layer is less than a thickness of the second insulating layer,

wherein a concentration of hydrogen in the first insulating layer is higher than a concentration of hydrogen in the second insulating layer; and

wherein the display panel comprises a pixel circuit and a driver circuit providing a driving signal for the pixel circuit, wherein the driver circuit comprises the second transistor.

18. A display device, comprising the display panel according to claim 17 .

19. A display panel, comprising:

a second transistor, wherein the second transistor comprises a second active layer, a second gate, a third gate, a second source, and a second drain, and wherein the second active layer comprises an oxide semiconductor; and

a first insulating layer and a second insulating layer, wherein the first insulating layer and the second insulating layer are located on both sides of the second active layer, wherein the first insulating layer is located between the second gate and the second active layer, wherein the second insulating layer is located between the third gate and the second active layer, and wherein a thickness of the first insulating layer is less than a thickness of the second insulating layer,

wherein a concentration of hydrogen in the first insulating layer is higher than a concentration of hydrogen in the second insulating layer.

20. A display device, comprising the display panel according to claim 19 .