Dielectric layers for digital microfluidic devices
An electrowetting system is disclosed. The system includes electrodes configured to manipulate droplets of fluid in a microfluidic space. Each electrode is coupled to circuitry operative to selectively apply a driving voltage to the electrode. The system includes a dielectric stack including a first dielectric pair comprising a first layer having a first dielectric constant and a second layer having a second dielectric constant. The second dielectric constant is larger than the first dielectric constant. The dielectric stack includes a second dielectric pair comprising a third layer having a third dielectric constant and a fourth layer having a fourth dielectric constant. The fourth dielectric constant is larger than the third dielectric constant. A ratio of a thickness of the fourth layer to a thickness of the third layer (T 4 :T 3 ) is in the range from about 2:1 to about 8:1. The second dielectric pair is thinner than the first dielectric pair.
1. An electrowetting system for performing droplet operations, the system including:
a plurality of electrodes configured to manipulate droplets of fluid in a microfluidic space, circuitry operatively coupled to the plurality of electrodes to selectively apply drive signals to one or more of the plurality of electrodes; and
a dielectric stack disposed over the plurality of electrodes comprising:
a first dielectric layer;
a second dielectric layer, the second dielectric layer having a dielectric constant greater than a dielectric constant of the first dielectric layer;
a third dielectric layer; and
a fourth dielectric layer, the fourth dielectric layer having a dielectric constant greater than a dielectric constant of the third dielectric layer, and the first and second dielectric layer forming a first dielectric pair and the third and fourth dielectric layer forming a second dielectric pair, the first dielectric pair having a first thickness ratio (T 1 :T 2 ) of the first dielectric layer to the second dielectric layer of about 1:1 and the second dielectric pair having a second thickness ratio (T 4 :T 3 ) of the fourth dielectric layer to the third dielectric layer of between about 4:1 to about 6:1; and
the total thickness of the second dielectric pair is thinner than the total thickness of the first dielectric pair.
2. The electrowetting system of claim 1 , wherein the first dielectric layer and the third dielectric layer each comprise a material independently selected from the group consisting of alumina (Al 2 O 3 ), silica (SiO 2 ), and silicon nitride (Si 3 N 4 ).
3. The electrowetting system of claim 1 , wherein the first dielectric layer and the third dielectric layer is alumina (Al 2 O 3 ).
4. The electrowetting system of claim 1 , wherein the second dielectric layer and the fourth dielectric layer each comprise a material independently selected from the group consisting of hafnium oxide (HfO 2 ), tantalum oxide (Ta 2 O 5 ), titanium oxide (TiO 2 ), zirconium oxide (ZrO 2 ), yttrium oxide (Y 2 O 3 ), and lanthanum oxide (La 2 O 5 ).
5. The electrowetting system of claim 1 , wherein the second dielectric layer and the fourth dielectric layer is hafnium oxide (HfO 2 ).
6. The electrowetting system of claim 1 , wherein the first, second, third, and fourth dielectric layers are formed by atomic layer deposition (ALD).
7. The electrowetting system of claim 1 , the dielectric stack further comprising:
a fifth dielectric layer;
a sixth dielectric layer, the sixth dielectric layer having a dielectric constant greater than a dielectric constant of the fifth dielectric layer;
a seventh dielectric layer; and
an eighth dielectric layer, the eighth dielectric layer having a dielectric constant greater than a dielectric constant of the seventh dielectric layer; and
the fifth and sixth dielectric layer forming a third dielectric pair and the seventh and eighth dielectric layer forming a fourth dielectric pair, the third dielectric pair having a thickness ratio (T 6 :T 5 ) of the sixth layer to the fifth layer of between about 4:1 to about 6:1 and the fourth dielectric pair having a thickness ratio (T 8 :T 7 ) of the eighth layer to the seventh layer of between about 4:1 to about 6:1.
8. The electrowetting system of claim 7 , wherein,
the third dielectric pair is thinner than the first dielectric pair; and
the fourth dielectric pair is thinner than the first dielectric pair.
9. The electrowetting system of claim 7 , wherein:
the total thickness of the first dielectric pair is greater than a total thickness of the third dielectric pair and greater than the total thickness of the fourth dielectric pair.
10. The electrowetting system of claim 7 , wherein the first, third, fifth and seventh dielectric layer is alumina (Al 2 O 3 ).
11. The electrowetting system of claim 7 , wherein the second, fourth, sixth and eighth dielectric layer is hafnium oxide (HfO 2 ).
12. The electrowetting system of claim 7 , wherein the fifth, sixth, seventh, and eighth dielectric layers are formed by atomic layer deposition (ALD).
13. The electrowetting system of claim 7 , wherein the seventh dielectric layer is formed of alumina (Al 2 O 3 ), and the eighth dielectric layer is formed of hafnium oxide (HfO 2 ).
14. The electrowetting system of claim 1 wherein,
the second dielectric layer is disposed over the first dielectric layer;
the third dielectric layer is disposed over the second dielectric layer; and
the fourth dielectric layer is disposed over the third dielectric layer.
15. The electrowetting system of claim 14 wherein,
a fifth dielectric layer is disposed over the fourth dielectric layer;
a sixth dielectric layer is disposed over the fifth dielectric layer;
a seventh dielectric layer is disposed over the sixth dielectric layer; and
an eighth dielectric layer is disposed over the seventh dielectric layer.
16. The electrowetting system of claim 1 , wherein the first dielectric layer is formed of alumina (Al 2 O 3 ), and the second dielectric layer is formed of hafnium oxide (HfO 2 ).
17. The electrowetting system of claim 16 , wherein the third dielectric layer is formed of alumina (Al 2 O 3 ), and the fourth dielectric layer is formed of hafnium oxide (HfO 2 ).
18. The electrowetting system of claim 16 , wherein a fifth dielectric layer is formed of alumina (Al 2 O 3 ), and a sixth dielectric layer is formed of hafnium oxide (HfO 2 ).
19. The electrowetting system of claim 1 , comprising a protective layer disposed over the dielectric stack.
20. The electrowetting system of claim 19 , wherein the protective layer includes parylene.
21. The electrowetting system of claim 1 , comprising a hydrophobic layer disposed over the dielectric stack.
22. The electrowetting system of claim 21 , wherein the hydrophobic layer includes Teflon®.
23. An electrowetting system for performing droplet operations, the system including:
a plurality of electrodes configured to manipulate droplets of fluid in a microfluidic space, circuitry operatively coupled to the plurality of electrodes to selectively apply drive signals to one or more of the plurality of electrodes; and
a dielectric stack disposed over the plurality of electrodes comprising:
a first dielectric layer formed of alumina (Al 2 O 3 ), the first dielectric layer having a thickness of about 50 nanometers;
a second dielectric layer formed of hafnium oxide (HfO 2 ), the second dielectric layer having a thickness of about 50 nanometers;
a third dielectric layer formed of alumina (Al 2 O 3 ), the third dielectric layer having a thickness of about 5 nanometers; and
a fourth dielectric layer formed of hafnium oxide (HfO 2 ), the fourth dielectric layer having a thickness of about 28 nanometers.
24. The electrowetting system of claim 23 , wherein the first dielectric layer, the second dielectric layer, the third dielectric layer, and the fourth dielectric layer further comprise silicon nitride (Si 3 N 4 ).
25. The electrowetting system of claim 23 , wherein the first dielectric layer, second dielectric layer, third dielectric layer, and fourth dielectric layer are formed by atomic layer deposition (ALD).
26. The electrowetting system of claim 23 , comprising a protective layer disposed over the dielectric stack.
27. The electrowetting system of claim 26 , wherein the protective layer includes parylene.
28. The electrowetting system of claim 27 , comprising a hydrophobic layer disposed over the dielectric stack.
29. The electrowetting system of claim 28 , wherein the hydrophobic layer includes Teflon®.
30. An electrowetting system for performing droplet operations, the system including:
a plurality of electrodes configured to manipulate droplets of fluid in a microfluidic space, circuitry operatively coupled to the plurality of electrodes to selectively apply drive signals to one or more of the plurality of electrodes; and
a dielectric stack disposed over the plurality of electrodes comprising:
a first dielectric layer formed of alumina (Al 2 O 3 ), the first dielectric layer having a thickness of about 50 nanometers;
a second dielectric layer formed of hafnium oxide (HfO 2 ), the second dielectric layer having a thickness of about 50 nanometers, the first dielectric layer and the second dielectric layer forming a first dielectric pair;
a third dielectric layer formed of alumina (Al 2 O 3 ), the third dielectric layer having a thickness of about 5 nanometers;
a fourth dielectric layer formed of hafnium oxide (HfO 2 ), the fourth dielectric layer having a thickness of about 28 nanometers, the third dielectric layer and the fourth dielectric layer forming a second dielectric pair;
a fifth dielectric layer formed of alumina (Al 2 O 3 ), the fifth dielectric layer having a thickness of about 5 nanometers;
a sixth dielectric layer formed of hafnium oxide (HfO 2 ), the sixth dielectric layer having a thickness of about 28 nanometers, the fifth dielectric layer and the sixth dielectric layer forming a third dielectric pair;
a seventh dielectric layer formed of alumina (Al 2 O 3 ), the seventh dielectric layer having a thickness of about 5 nanometers; and
an eighth dielectric layer formed of hafnium oxide (HfO 2 ), the eighth dielectric layer having a thickness of about 28 nanometers, the seventh dielectric layer and the eighth dielectric layer forming a fourth dielectric pair.