Light emitting stacked structure and display device having the same

1. A light emitting stacked structure comprising:

a first epitaxial stack including a first n-type semiconductor layer, a first p-type semiconductor layer, and a first active layer disposed between the first n-type semiconductor layer and the first p-type semiconductor layer;

a second epitaxial stack disposed on the first epitaxial stack and including a second n-type semiconductor layer, a second p-type semiconductor layer, and a second active layer disposed between the second n-type semiconductor layer and the second p-type semiconductor layer;

a third epitaxial stack disposed on the second epitaxial stack and including a third n-type semiconductor layer, a third p-type semiconductor layer, and a third active layer disposed between the third n-type semiconductor layer and the third p-type semiconductor layer; and

a shared electrical path disposed between two adjacent epitaxial stacks facing each other,

wherein two semiconductor layers of the two adjacent epitaxial stacks with the shared electrical path therebetween each has a polarity, and

wherein the shared electrical path is disposed between the second epitaxial stack and the third epitaxial stack.

2. The light emitting stacked structure of claim 1 , wherein the shared electrical path comprises a transparent conductive oxide.

3. The light emitting stacked structure of claim 2 , wherein the transparent conductive oxide comprises SnO, InO 2 , ZnO, ITO, or ITZO.

4. The light emitting stacked structure of claim 2 , wherein the same polarity is p-type.

5. The light emitting stacked structure of claim 4 , wherein the shared electrical path comprises p-type contact electrodes.

6. The light emitting stacked structure of claim 5 , wherein the p-type contact electrodes have a thickness of about 2000 Å to about 2 μm.

7. The light emitting stacked structure of claim 2 , wherein the same polarity is n-type and the shared electrical path comprises n-type contact electrodes.

8. The light emitting stacked structure of claim 1 , further comprising an adhesive layer disposed between the first epitaxial stack and the second epitaxial stack.

9. The light emitting stacked structure of claim 8 , wherein the adhesive layer comprises a transparent conductive oxide.

10. The light emitting stacked structure of claim 8 , wherein the adhesive layer comprises at least one of:

an organic material including at least one of epoxy polymer, photoresist, parylene, PMMA, BCB, and SUB; and

an inorganic material including at least one of silicon oxide, aluminum oxide, and melting glass.

11. The light emitting stacked structure of claim 1 , wherein the first epitaxial stack is configured to emit red light.

12. The light emitting stacked structure of claim 11 , wherein the second and third epitaxial stacks are configured to emit green light and blue light, respectively.

13. The light emitting stacked structure of claim 1 , further comprising a substrate under the first epitaxial stack.

14. The light emitting stacked structure of claim 13 , further comprising an adhesive layer disposed between the first epitaxial stack and the substrate.

15. The light emitting stacked structure of claim 14 , wherein the adhesive layer comprises a conductive material.

16. The light emitting stacked structure of claim 14 , wherein the adhesive layer comprises an opaque material configured to absorb light.