Via interconnects for a magnetoresistive random-access memory device
A via interconnect structure for an MRAM device is provided. The via interconnect structure includes an interlayer dielectric layer having a via formed therein, a magnetic metal layer formed in the via, the magnetic metal layer having a cavity formed therein, and a nonmagnetic metal layer formed in the cavity of the magnetic metal layer. The magnetic metal layer is configured such that magnetization vectors of the magnetic metal layer are least substantially in-plane relative to an MRAM stack structure of the MRAM device.
1. A via interconnect structure for an MRAM device, the via interconnect structure comprising:
an interlayer dielectric layer having a via formed therein;
a magnetic metal layer formed in the via, the magnetic metal layer having a cavity formed therein; and
a nonmagnetic metal layer formed in the cavity of the magnetic metal layer,
wherein the magnetic metal layer is configured such that magnetization vectors of the magnetic metal layer are least substantially in-plane relative to an MRAM stack structure of the MRAM device.
2. The via interconnect structure of claim 1 , wherein an upper surface of the nonmagnetic metal layer is above an upper surface of the magnetic metal layer.
3. The via interconnect structure of claim 2 , wherein the upper surface of the nonmagnetic metal layer is at least substantially coplanar with the upper surface of the interlayer dielectric layer.
4. The via interconnect structure of claim 1 , wherein an upper surface of the nonmagnetic metal layer is at least substantially coplanar with an upper surface of the magnetic metal layer.
5. The via interconnect structure of claim 1 , wherein an upper surface of the nonmagnetic metal layer, an upper surface of the magnetic metal layer, and an upper surface of the interlayer dielectric layer are at least substantially coplanar.
6. The via interconnect structure of claim 1 , wherein the nonmagnetic metal layer comprises at least one material selected from the group consisting of W and TaN.
7. The via interconnect structure of claim 1 , wherein the magnetic metal layer comprises Co.
8. An MRAM device comprising:
a via interconnect structure including
an interlayer dielectric layer having a via formed therein,
a magnetic metal layer formed in the via, the magnetic metal layer having a cavity formed therein, and
a nonmagnetic metal layer formed in the cavity of the magnetic metal layer; and
an MRAM stack structure formed on the via interconnect structure,
wherein the magnetic metal layer is configured such that magnetization vectors of the magnetic metal layer are least substantially in-plane relative to the MRAM stack structure.
9. The MRAM device of claim 8 , wherein an upper surface of the nonmagnetic metal layer is above an upper surface of the magnetic metal layer.
10. The MRAM device of claim 9 , wherein the nonmagnetic metal layer directly contacts the MRAM stack structure.
11. The MRAM device of claim 9 , wherein the upper surface of the nonmagnetic metal layer is at least substantially coplanar with an upper surface of the interlayer dielectric layer.
12. The MRAM device of claim 8 , wherein an upper surface of the nonmagnetic metal layer is at least substantially coplanar with an upper surface of the magnetic metal layer.
13. The MRAM device of claim 12 , wherein the nonmagnetic metal layer and the magnetic metal layer directly contact the MRAM stack structure.