3DIC formation with dies bonded to formed RDLs
A method includes forming a dielectric layer over a carrier, forming a plurality of bond pads in the dielectric layer, and performing a planarization to level top surfaces of the dielectric layer and the plurality of bond pads with each other. A device die is bonded to the dielectric layer and portions of the plurality of bond pads through hybrid bonding. The device die is encapsulated in an encapsulating material. The carrier is then demounted from the device die and the dielectric layer.
1. A method comprising:
providing a first carrier;
forming a conductive layer over the first carrier;
forming a plurality of metal bond pads over the conductive layer;
after forming the plurality of metal bond pads, forming a passivation layer over the conductive layer, the passivation layer surrounding the plurality of metal bond pads, wherein a first surface of the passivation layer is level with surfaces of the plurality of metal bond pads;
electrically coupling a plurality of electrode pads formed on an active surface of a semiconductor chip with the plurality of metal bond pads;
forming a molding compound over the first carrier and the plurality of metal bond pads;
removing the first carrier; and
forming a redistribution layer over the plurality of metal bond pads and a surface of the semiconductor chip opposite the active surface, the redistribution layer being electrically coupled to the plurality of metal bond pads.
2. The method of claim 1 , wherein the molding compound encapsulates the semiconductor chip, wherein a first surface of the molding compound proximal the first carrier is coplanar with a first surface of the semiconductor chip.
3. The method of claim 2 , further comprising grinding the molding compound so that a second surface of the molding compound distal the first carrier is coplanar with a second surface of the semiconductor chip.
4. The method of claim 2 , further comprising mounting a second carrier to a second surface of the molding compound, the semiconductor chip being between the first surface of the molding compound and the second surface of the molding compound.
5. The method of claim 1 , further comprising forming an electrical connector electrically coupled to the plurality of electrode pads through the plurality of metal bond pads, wherein the molding compound is formed encapsulating the electrical connector.
6. The method of claim 1 , further comprising forming a dielectric layer on the conductive layer after forming the conductive layer and prior to forming the plurality of metal bond pads.
7. A method comprising:
forming a conductive layer;
forming a plurality of metal bond pads over the conductive layer, wherein surfaces of the metal bond pads opposite the conductive layer are coplanar with one another;
after forming the plurality of metal bond pads, forming a passivation layer over the conductive layer, the passivation layer surrounding the plurality of metal bond pads;
attaching a first semiconductor chip and a second semiconductor chip to the plurality of metal bond pads, wherein a first plurality of electrode pads formed on an active surface of the first semiconductor chip are electrically coupled to the plurality of metal bond pads;
forming an electrical connector electrically coupled to the plurality of metal bond pads;
forming a molding compound over the passivation layer and the plurality of metal bond pads, the molding compound encapsulating the first semiconductor chip, the second semiconductor chip, and the electrical connector, wherein a surface of the molding compound is level with surfaces of the first plurality of electrode pads; and
forming a redistribution layer over the plurality of metal bond pads and a surface of the first semiconductor chip opposite the active surface, the redistribution layer being electrically coupled to the plurality of metal bond pads through the electrical connector.
8. The method of claim 7 , further comprising forming a second electrical connector electrically coupled to a second plurality of electrode pads of the second semiconductor chip, wherein the molding compound is formed encapsulating the first semiconductor chip, the electrical connector, the second semiconductor chip, and the second electrical connector.
9. The method of claim 7 , further comprising forming a dielectric layer over a first carrier, wherein the metal bond pads and the passivation layer are formed over the dielectric layer.
10. The method of claim 9 , further comprising forming the conductive layer in the dielectric layer, the conductive layer having surfaces coplanar with each other, the conductive layer being electrically coupled to the metal bond pads.
11. The method of claim 10 , further comprising:
removing the first carrier; and
forming a plurality of solder balls over the conductive layer, the plurality of solder balls being electrically coupled to the conductive layer.
12. The method of claim 7 , further comprising forming a dielectric layer on the conductive layer, wherein the dielectric layer is in direct contact with a top surface of the conductive layer, and wherein the dielectric layer is in direct contact with bottom surfaces of the plurality of metal bond pads.
13. A method comprising:
forming a plurality of bond pads over a carrier;
after forming the plurality of bond pads, forming a first dielectric layer surrounding the plurality of bond pads;
electrically coupling a first semiconductor chip to the plurality of bond pads, wherein the first semiconductor chip has an active surface and a plurality of electrode pads formed on the active surface, and wherein the plurality of electrode pads are electrically coupled to the plurality of bond pads;
forming a molding compound over the first semiconductor chip and the plurality of bond pads, wherein the molding compound has a surface coplanar with bottom surfaces of the plurality of electrode pads;
removing the carrier; and
forming a redistribution layer on the molding compound, the redistribution layer being electrically coupled to the plurality of bond pads.
14. The method of claim 13 , further comprising forming a conductive layer and a second dielectric layer surrounding the conductive layer over the carrier, wherein the plurality of bond pads and the first dielectric layer are formed over the conductive layer and the second dielectric layer.
15. The method of claim 13 , wherein forming the molding compound comprises using an underfill material.
16. The method of claim 13 , further comprising electrically coupling a second semiconductor chip to the plurality of bond pads, wherein the second semiconductor chip are electrically coupled to the plurality of bond pads, and wherein the molding compound encapsulates the second semiconductor chip.
17. The method of claim 13 , further comprising forming one or more vias connecting one or more of the plurality of bond pads to the redistribution layer.
18. The method of claim 13 , wherein the redistribution layer is formed on a surface of the first semiconductor chip opposite the active surface.
19. The method of claim 13 , further comprising forming a plurality of solder balls electrically coupled to the plurality of bond pads.
20. The method of claim 17 , wherein the one or more vias are formed before forming the molding compound.