Laser processing apparatus, laser processing method, and method for manufacturing semiconductor apparatus
A laser processing apparatus and a laser processing method that can effectively prevent a processing time for one semiconductor film from increasing are provided. A laser processing apparatus ( 1 ) according to an embodiment includes a laser light source ( 2 ) configured to irradiate a semiconductor film (M 1 ) with a laser beam, a film state measuring instrument ( 5 ) configured to measure a state of the semiconductor film after the semiconductor film (M 1 ) is irradiated with the laser beam, and a laser light adjusting mechanism configured to adjust a timing at which the semiconductor film (M 1 ) is irradiated with a next laser beam and intensity of the laser beam according to the state of the semiconductor film (M 1 ) measured by the film state measuring instrument ( 5 ).
1. A laser processing apparatus comprising:
a laser light source emitting a laser beam;
a laser light adjusting mechanism including:
at least one partial reflection mirror configured to split the laser beam into a first laser beam pulse and a second laser beam pulse so as to irradiate a semiconductor film with the first laser beam pulse via a first optical path having a first optical path length and with the second laser beam pulse via a second optical path having a second optical path length; and
one or more optical elements configured to change the lengths of the first and second optical paths so as to adjust a timing at which the first and the second laser beam pulses irradiate the semiconductor film;
the laser light adjusting mechanism being further configured to change an intensity of the second laser beam pulse by changing transmittance of the at least one partial reflection mirror;
a film state measuring instrument configured to determine a state of the semiconductor film,
wherein the film state measuring instrument determines the state of the semiconductor film after the semiconductor film is irradiated with the first laser beam pulse and before the semiconductor film is irradiated with the second laser beam pulse,
wherein the intensity of the second laser beam pulse and the timing at which the second laser beam pulse irradiates the semiconductor film are adjusted based on the determined state, and
wherein the second optical path length of the second laser beam pulse is adjusted so that the second laser beam pulse irradiates the semiconductor film when the film state measuring instrument determines that a temperature of the semiconductor film has fallen to a temperature that is higher than or equal to 100° C. and lower than or equal to a predetermined melting point temperature.
2. The laser processing apparatus according to claim 1 , wherein
the film state measuring instrument is configured to determine the state of the semiconductor film by measuring a reflectance, a transmittance, an emissivity, or a resistance value of the semiconductor film.
3. The laser processing apparatus according to claim 1 , wherein
at least a part of the laser light adjusting mechanism is an attenuator provided in an optical path from the laser light source to the semiconductor film that is configured to attenuate a laser beam to adjust the laser beam to predetermined energy density.
4. The laser processing apparatus according to claim 1 , wherein
a plurality of the partial reflection mirrors are present, the optical path from the laser light source to the semiconductor film is divided into a plurality of optical paths by the plurality of the partial reflection mirrors, and by adjusting an optical length of the plurality of optical paths, an irradiation interval from when a laser beam pulse is applied until when a next laser beam pulse is applied is adjusted.