Sensor device for transcapacitive sensing with shielding
A silicon sensor device includes: a plurality of metal layers; and a plurality of dielectric layers. Each of the plurality of metal layers is disposed on a respective dielectric layer, and wherein each of the plurality of metal layers is separated from an adjacent metal layer by a respective dielectric layer. The plurality of metal layers include: a first metal layer comprising a plurality of transmitter electrodes and a plurality of receiver electrodes; a second metal layer disposed beneath the first metal layer, wherein the second metal layer comprises a plurality of routing traces for the plurality of transmitter electrodes and a plurality of shielding blocks; and one or more circuit layers disposed beneath the second metal layer. A respective shielding block of the plurality of shielding blocks is configured to shield a respective portion of a respective receiver electrode of the plurality of receiver electrodes.
1. A silicon sensor device, comprising:
a plurality of metal layers; and
a plurality of dielectric layers, wherein each of the plurality of metal layers is disposed on a respective dielectric layer, and wherein each of the plurality of metal layers is separated from an adjacent metal layer by a respective dielectric layer;
wherein the plurality of metal layers include:
a first metal layer comprising a plurality of transmitter electrodes and a plurality of receiver electrodes;
a second metal layer disposed beneath the first metal layer, wherein the second metal layer comprises a plurality of routing traces for the plurality of transmitter electrodes and a plurality of shielding blocks; and
one or more circuit layers disposed beneath the second metal layer;
wherein a respective shielding block of the plurality of shielding blocks is configured to shield a respective portion of a respective receiver electrode of the plurality of receiver electrodes from energy and/or noise originating from the one or more circuit layers; and
wherein the plurality of metal layers and the plurality of dielectric layers are disposed on a same die.
2. The silicon sensor device according to claim 1 , wherein the plurality of shielding blocks are connected to the plurality of routing traces.
3. The silicon sensor device according to claim 1 , wherein the plurality of shielding blocks are not connected to the plurality of routing traces.
4. The silicon sensor device according to claim 1 , wherein the plurality of shielding blocks are connected to one another via shielding traces.
5. The silicon sensor device according to claim 4 , wherein the plurality of shielding blocks and the shielding traces form a ground plane.
6. The silicon sensor device according to claim 1 , wherein a respective shielding block of the plurality of shielding blocks is formed of solid metal.
7. The silicon sensor device according to claim 1 , wherein a respective shielding block of the plurality of shielding blocks comprises both a solid metal portion and a metal mesh portion.
8. The silicon sensor device according to claim 1 , wherein a respective shielding block of the plurality of shielding blocks is formed of metal mesh.
9. The silicon sensor device according to claim 1 , further comprising:
a plurality of vias disposed in a dielectric layer between the first and second metal layers, wherein the plurality of vias connect the plurality of transmitter electrodes in the first metal layer to the plurality of routing traces in the second metal layer.
10. The silicon sensor device according to claim 1 , wherein the one or more circuit layers comprise: an electrostatic discharge (ESD) protection circuit, an analog front end, a transmission driver circuit, a voltage regulator, a random access memory (RAM), a flash memory, control circuits, and/or a controller.
11. An input sensing device, comprising:
a plurality of sensor electrodes, including a plurality of transmitter electrodes and a plurality of receiver electrodes;
a plurality of routing traces for the plurality of transmitter electrodes;
a plurality of shielding blocks; and
a processing system coupled to the plurality of sensor electrodes, wherein the processing system is configured to obtain an image of an input object in a sensing region by driving sensing signals onto the plurality of transmitter electrodes and obtaining resulting signals via the plurality of receiver electrodes;
wherein the plurality of transmitter electrodes and the plurality of receiver electrodes are disposed on a first metal layer of the input sensing device;
wherein the plurality of routing traces and the plurality of shielding blocks are disposed on a second metal layer of the input sensing device disposed beneath the first metal layer;
wherein at least a part of the processing system is disposed on one or more circuit layers disposed beneath the second metal layer;
wherein a respective shielding block of the plurality of shielding blocks is configured to shield a respective portion of a respective receiver electrode of the plurality of receiver electrodes from energy and/or noise originating from the one or more circuit layers.
12. The input sensing device according to claim 11 , wherein the plurality of shielding blocks are not connected to the plurality of routing traces.
13. The input sensing device according to claim 11 , wherein the plurality of shielding blocks are connected to one another via shielding traces.
14. The input sensing device according to claim 11 , wherein a respective shielding block of the plurality of shielding blocks is formed of solid metal.
15. The input sensing device according to claim 11 , wherein a respective shielding block of the plurality of shielding blocks comprises both a solid metal portion and a metal mesh portion.
16. A sensor device, comprising:
a plurality of metal layers; and
a plurality of dielectric layers, wherein each of the plurality of metal layers is disposed on a respective dielectric layer, and wherein each of the plurality of metal layers is separated from an adjacent metal layer by a respective dielectric layer;
wherein the plurality of metal layers include:
a first metal layer comprising a plurality of transmitter electrodes and a plurality of receiver electrodes;
a second metal layer disposed beneath the first metal layer, wherein the second metal layer comprises a plurality of routing traces for the plurality of transmitter electrodes and a plurality of shielding blocks; and
one or more circuit layers disposed beneath the second metal layer;
wherein a respective shielding block of the plurality of shielding blocks is configured to shield a respective portion of a respective receiver electrode of the plurality of receiver electrodes from energy and/or noise originating from the one or more circuit layers.
17. The sensor device according to claim 16 , wherein the plurality of shielding blocks are not connected to the plurality of routing traces.
18. The sensor device according to claim 16 , wherein the plurality of shielding blocks are connected to one another via shielding traces.
19. The sensor device according to claim 16 , wherein a respective shielding block of the plurality of shielding blocks is formed of solid metal.
20. The sensor device according to claim 16 , wherein a respective shielding block of the plurality of shielding blocks comprises both a solid metal portion and a metal mesh portion.