Semiconductor device and semiconductor apparatus including the same

1. A capacitor comprising:

a first electrode;

a second electrode which is apart from the first electrode; and

a dielectric layer between the first electrode and the second electrode, the dielectric layer comprising

a base material including an oxide of a base metal, the base material having a dielectric constant of about 20 to about 70, and

co-dopants including a Group 3 element and a Group 5 element.

2. The capacitor of claim 1 , wherein the Group 3 element comprises at least one of Sc, Y, B, Al, Ga, In, or Tl.

3. The capacitor of claim 1 , wherein the Group 5 element comprises at least one of V, Nb, Ta, N, P, As, Sb, or Bi.

4. The capacitor of claim 1 , wherein the base metal comprises at least of Hf, Zr, Pr, Nd, Gd, Dy, Yb, Pb, Zn, Ti, or Lu.

5. The capacitor of claim 1 , wherein

the dielectric layer comprises a compound represented by (A,B) x C y O z ,

where A refers to the Group 3 element,

B is the Group 5 element,

C refers to the base metal, and the base metal comprises at least one of Hf, Zr, Pr, Nd, Gd, Dy, Yb, Pb, Zn, Ti, or Lu, and

x+y+z=1, 0<x≤0.2, and 0<y≤0.5.

6. The capacitor of claim 1 , wherein at least one of the Group 3 element or the Group 5 element comprises d-orbitals.

7. The capacitor of claim 1 , wherein the Group 3 element comprises at least one of Sc, Y, or a combination thereof.

8. The capacitor of claim 1 , wherein the Group 5 element comprises at least one of V, Nb, Ta, or a combination thereof.

9. The capacitor of claim 1 , wherein

the Group 3 element is included in an amount greater than about 0.0 at % to about 20.0 at % based on all the co-dopants and metals of the dielectric layer, and

the Group 5 element is included in an amount greater than about 0.0 at % to about 20.0 at % based on all the co-dopants and the metals of the dielectric layer.

10. The capacitor of claim 1 , wherein the dielectric layer has an energy band wider than an energy band of the base material.

11. The capacitor of claim 1 , wherein the dielectric layer comprises at least one dopant pair in which the Group 3 element and the Group 5 element share an oxygen atom.

12. The capacitor of claim 11 , wherein the at least one dopant pair comprises at least two dopant pairs, and a distance between the at least two dopant pairs is equal to or less than 6 times an ionic radius of the base metal.

13. The capacitor of claim 1 , wherein the dielectric layer has a thickness of about 10 Å to about 100 Å.

14. The capacitor of claim 1 , wherein the dielectric layer has a dielectric constant of about 40 or more.

15. The capacitor of claim 1 , wherein a permittivity of the dielectric layer is greater than a permittivity of the base material by about 10% or more.

16. The capacitor of claim 1 , wherein at least one of the co-dopants has a substitutional formation energy of less than about 0 for the base material.

17. The capacitor of claim 1 , wherein at least one of the first electrode or the second electrode comprise a metal, a metal nitride, a metal oxide, or a combination thereof.

18. A semiconductor apparatus comprising:

the capacitor of claim 1 .

19. The semiconductor apparatus of claim 18 , wherein the semiconductor comprises:

a transistor; and

a charge-storage device electrically connected to the transistor,

wherein at least one of the transistor or the charge-storage device comprises the capacitor of claim 1 .

20. The semiconductor apparatus of claim 18 , wherein

the capacitor of claim 1 is included in a transistor,

the first electrode includes a channel region between a source and a drain,

the second electrode is a gate electrode, and

the dielectric layer is a gate insulating layer.