IP Library › Granted Patent US 11,822,122
Granted Patent B2
US 11,822,122 · App. 17/462,491 · Granted Nov 21, 2023

Waveguide structures

Inventors: Yusheng Bian (Ballston Lake, NY); Ajey Poovannummoottil Jacob (Watervliet, NY); Steven M. Shank (Jericho, VT)
Assignee: GLOBALFOUNDRIES U.S. INC.
G02B6/1225G02B1/002G02B1/005G02B6/125G02B2006/1213G02B2006/12061G02B2006/12147
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Quick Facts
Patent No.
US 11,822,122
App. No.
17/462,491
Granted
Nov 21, 2023
Kind
B2
Abstract

The present disclosure relates to semiconductor structures and, more particularly, to waveguide structures with metamaterial structures and methods of manufacture. The structure includes: at least one waveguide structure; and metamaterial structures separated from the at least one waveguide structure by an insulator material, the metamaterial structures being structured to decouple the at least one waveguide structure to simultaneously reduce insertion loss and crosstalk of the at least one waveguide structure.

Claims (20)

1. A structure comprising:

a plurality of waveguide structures; and

metamaterial structures separated from the plurality of waveguide structures by an insulator material, the metamaterial structures being structured to decouple the plurality of waveguide structures to simultaneously reduce insertion loss and crosstalk of the plurality of waveguide structures; and

additional metamaterial structures above the plurality of waveguide structures and which are composed of different material than the metamaterial structures and the plurality of waveguide structures.

2. The structure of claim 1 , wherein the plurality of waveguide structures is a plurality of planar waveguide structures in parallel to one another and the metamaterial structures are composed of geometric shapes provided between the plurality of planar waveguide structures.

3. The structure of claim 2 , wherein the plurality of planar waveguide structures and the metamaterial structures are composed of a same material on a same level of a device.

4. The structure of claim 3 , wherein the plurality of planar waveguide structures and the metamaterial structures are composed of Si or SiN material.

5. A structure comprising:

at least one waveguide structure; and

metamaterial structures separated from the at least one waveguide structure by an insulator material, the metamaterial structures being structured to decouple the at least one waveguide structure to simultaneously reduce insertion loss and crosstalk of the at least one waveguide structure,

wherein the metamaterial structures are on opposing sides of the at least one waveguide structure, and

wherein the metamaterial structures are above and at a same level as the at least one waveguide structure.

6. The structure of claim 1 , wherein the plurality of planar waveguide structures are parallel to one another and the metamaterial structures are composed of geometric shapes provided above the plurality of planar waveguide structures.

7. The structure of claim 6 , wherein the plurality of planar waveguide structures and the metamaterial structures are composed of different material on a different level of a device.

8. The structure of claim 6 , wherein the metamaterial structures are geometric shapes provided in two levels, each of which are above the plurality of planar waveguide structures.

9. A structure comprising:

a waveguide structure; and

metamaterial structures separated from the waveguide structure by an insulator material, the metamaterial structures being structured to reduce insertion loss and crosstalk of the waveguide structure,

wherein the metamaterial structures are above and at the same level as the waveguide structure, and the metamaterial structures above the waveguide structure are composed of different materials and the metamaterial structures at the same level of the waveguide structure are of a same material.

10. The structure of claim 5 , wherein the at least one waveguide structure and the metamaterial structures are of different materials.

Continuity (2)
Division 16549466 · Aug 23, 2019
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