Hardware switch on main feed line in a radio frequency plasma processing chamber
Embodiments provided herein generally include apparatus, e.g., plasma processing systems, and methods for the plasma processing of a substrate in a processing chamber. Some embodiments are directed to a radio-frequency (RF) generation system. The RF generation system generally includes an RF generator, and a vacuum interrupter configured to selectively decouple the RF generator from a bias electrode of a plasma chamber based on detection of a fault condition associated with operation of the plasma chamber.
1. A radio-frequency (RF) generation system, comprising:
a first RF generator; and
a vacuum interrupter comprising
a first electrode disposed in a vacuum housing,
a second electrode disposed in the vacuum housing, and
a metal enclosure coupled to ground and at least partially around the vacuum housing;
the vacuum interrupter configured to selectively decouple the first RF generator from a bias electrode of a plasma chamber based on detection of a fault condition associated with operation of the plasma chamber by decoupling the first electrode from the second electrode.
2. The RF generation system of claim 1 , further comprising a controller configured to:
detect the fault condition; and
control the selective decoupling of the first RF generator from the bias electrode by the vacuum interrupter based on the detection.
3. The RF generation system of claim 2 , wherein the controller is further configured to
turn off the first RF generator based on the detection of the fault condition.
4. The RF generation system of claim 2 , further comprising an actuator configured to control the vacuum interrupter, wherein the controller is configured to control the vacuum interrupter via the actuator.
5. The RF generation system of claim 4 , wherein the actuator comprises a pneumatic actuator or a magnetic actuator.
6. The RF generation system of claim 2 , wherein the controller is configured to detect the fault condition based on at least one of:
a voltage on a RF feedline between the first RF generator and the bias electrode of the plasma chamber; or
a current between the first RF generator and the plasma chamber.
7. The RF generation system of claim 2 , further comprising an RF matching network coupled between the first RF generator and the plasma chamber, wherein the controller is configured to detect the fault condition by detecting a change in impedance associated with the RF matching network.
8. The RF generation system of claim 1 , further comprising:
a first filter coupled between the first RF generator and the vacuum interrupter;
a second RF generator; and
a second filter coupled between the second RF generator and the vacuum interrupter.
9. The RF generation system of claim 8 , further comprising:
an RF matching circuit coupled between the first RF generator and the first filter; and
another RF matching circuit coupled between the second RF generator and the second filter.
10. A method for plasma processing, comprising:
generating, via a first RF generator, an RF signal provided to a bias electrode of a plasma chamber;
detecting a fault condition associated with operation of the plasma chamber; and
decoupling, via a vacuum interrupter, the first RF generator from the bias electrode of the plasma chamber based on the detection of the fault condition;
the vacuum interrupter comprising
a first electrode disposed in a vacuum housing,
a second electrode disposed in the vacuum housing, and
a metal enclosure coupled to ground and at least partially around the vacuum housing;
wherein decoupling the first RF generator from the bias electrode of the plasma chamber comprises decoupling the first electrode from the second electrode based on the detection of the fault condition.
11. The method of claim 10 ,
further comprising turning off the first RF generator based on the detection of the fault condition.
12. The method of claim 10 , wherein the first RF generator is decoupled from the bias electrode of the plasma chamber by controlling an actuator for the vacuum interrupter.
13. The method of claim 10 , wherein detecting the fault condition comprises:
detecting a change in a voltage on a RF feedline between the first RF generator and the plasma chamber; or
detecting a change in a current between the first RF generator and the bias electrode of the plasma chamber.
14. The method of claim 10 , wherein detecting the fault condition comprises detecting a change in impedance associated with a RF matching network coupled between the first RF generator and the bias electrode of the plasma chamber.
15. The method of claim 10 , further comprising:
filtering the RF signal generated by the first RF generator;
generating, via a second RF generator, another RF signal; and
filtering the other RF signal, wherein the filtered RF signal and the filtered other RF signal are combined and provided to the bias electrode of the plasma chamber through the vacuum interrupter.
16. A method for plasma processing, comprising:
generating, via a first RF generator, an RF signal provided to a bias electrode of a plasma chamber;
detecting a fault condition associated with operation of the plasma chamber; and
decoupling, via a vacuum interrupter, the first RF generator from the bias electrode of the plasma chamber based on the detection of the fault condition;
filtering the RF signal generated by the first RF generator;
generating, via a second RF generator, another RF signal; and
filtering the other RF signal, wherein the filtered RF signal and the filtered other RF signal are combined and provided to the bias electrode of the plasma chamber through the vacuum interrupter.