Selective processing with etch residue-based inhibitors

1. A method of conducting a deposition on a semiconductor substrate, the method comprising:

selectively depositing a sacrificial material on a semiconductor substrate, the substrate comprising a surface having a plurality of regions of substrate materials having different selectivities for the sacrificial material, such that substantial deposition of the sacrificial material occurs on a first region of the substrate surface, and no substantial deposition occurs on a second region of the substrate surface;

depositing a non-sacrificial material on the substrate such that substantial deposition of the non-sacrificial material occurs on the second region and no substantial deposition of the non-sacrificial material occurs on sacrificial material on the first region; and

removing the sacrificial material such that net deposition of the non-sacrificial material occurs substantially only on the second region.

2. The method of claim 1 , wherein the selectivity of the deposition of the non-sacrificial material is based on a difference in electrical properties of the first and second regions substrate materials.

3. The method of claim 1 , wherein deposition of the sacrificial material occurs on a first region of the substrate surface by non-covalent bonding and deposition of the non-sacrificial material occurs on the second region of the substrate surface by covalent bonding.

4. The method of claim 1 , wherein the substantial deposition of the non-sacrificial material on the second region and no substantial deposition of the non-sacrificial material on the sacrificial material on the first region of the substrate has a chemical basis.

5. The method of claim 1 , wherein the first and second regions are dielectric and metal, respectively.

6. The method of claim 1 , wherein the first and second regions are different dielectrics, respectively.

7. The method of claim 6 , wherein the different dielectrics have different dielectric constants.

8. The method of claim 7 , wherein the dielectric constant of the first region is lower than the dielectric constant of the second region.

9. The method of claim 8 , wherein dielectric constant of the second region is greater by at least a factor of 4 than the dielectric constant of the first region.

10. The method of claim 8 , wherein the dielectric of the first region is SiO 2 or SiN, and the dielectric of the second regions is ZrO 2 .

11. The method of claim 1 or 10 , wherein the sacrificial material is a fluorocarbon (CF x ) or boron oxide (BO x Cl y ).

12. The method of claim 1 , wherein the non-sacrificial material is a metal.

13. The method of claim 12 , wherein the metal is selected from the group consisting of Cu, Al, W, Co and Ti.

14. The method of claim 1 , wherein the deposition of the non-sacrificial material is a blanket deposition.

15. The method of claim 1 , wherein the selective deposition of the sacrificial material occurs during a periodic etch back/reset operation during which etch residues produced provide some or all of the sacrificial material for the selective deposition.

16. An apparatus for processing substrates, the apparatus comprising:

one or more process chambers, each process chamber having a chuck;

one or more gas inlets into the process chambers and associated flow-control hardware; and

a controller having a processor and a memory, wherein

the processor and the memory are communicatively connected with one another,

the at least one processor is at least operatively connected with the flow-control hardware, and

the memory stores computer-executable instructions for controlling the at least one processor to at least control the flow-control hardware by:

conducting a deposition on a semiconductor substrate including selectively depositing a sacrificial material on a semiconductor substrate, the substrate having a surface with a plurality of regions of substrate materials having different selectivities for the sacrificial material, such that substantial deposition of the sacrificial material occurs on a first region of the substrate surface, and no substantial deposition occurs on a second region of the substrate surface;

depositing a non-sacrificial material on the substrate, such that substantial deposition of the non-sacrificial material occurs on the second region and no substantial deposition of the non-sacrificial material occurs on the first region; and,

removing the sacrificial material such that net deposition of the non-sacrificial material occurs substantially only on the second region.

17. The apparatus of claim 16 , wherein the computer-executable instructions further provide that the selectivity of the deposition of the non-sacrificial material is based on a difference in electrical properties of the first and second regions substrate materials.

18. The apparatus of claim 17 , wherein the selective deposition of the sacrificial material occurs during a periodic etch back/reset operation during which etch residues produced provide some or all of the sacrificial material for the selective deposition.

19. The apparatus of claim 16 , wherein the computer-executable instructions further provide that the deposition of the sacrificial material occurs on the first region of the substrate surface by non-covalent bonding and deposition of the non-sacrificial material occurs on the second region of the substrate surface by covalent bonding.

20. The apparatus of 16, wherein the computer-executable instructions further provide that the substantial deposition of the non-sacrificial material on the second region and no substantial deposition of the non-sacrificial material on the sacrificial material on the first region of the substrate has a chemical basis.