IP Library › Granted Patent US 11,830,659
Granted Patent B2
US 11,830,659 · App. 17/402,714 · Granted Nov 28, 2023

Shielding structure and inductor device

Inventors: Hsiao-Tsung Yen (Hsinchu, TW); Yi-Syue Han (Hsinchu, TW)
Assignee: REALTEK SEMICONDUCTOR CORPORATION
H01F27/2885H05K9/0073
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Quick Facts
Patent No.
US 11,830,659
App. No.
17/402,714
Granted
Nov 28, 2023
Kind
B2
Abstract

A shielding structure is disclosed. The shielding structure includes a patterned shielding layer and a ring structure. The patterned shielding layer is extended along a plane and located between an inductor structure and a substrate. The ring structure is coupled to and stacked on the patterned shielding layer along a first direction. The first direction is perpendicular to the plane. The ring structure surrounds the patterned shielding layer. The ring structure includes at least one opening and a ground terminal.

Claims (25)

1. A shielding structure, comprising:

a patterned shielding layer, extended along a plane and located between an inductor structure and a substrate; and

a ring structure, coupled to and stacked on the patterned shielding layer along a first direction, wherein the first direction is perpendicular to the plane, wherein the ring structure surrounds the patterned shielding layer, wherein the ring structure comprises at least one opening and a ground terminal, wherein the ring structure partially overlaps the patterned shielding layer in the first direction.

2. The shielding structure of claim 1 , wherein the patterned shielding layer includes a first side, a second side, a third side and a fourth side, and the ring structure is disposed along the first side, the second side, the third side and the fourth side.

3. The shielding structure of claim 2 , wherein the patterned shielding layer comprises a first opening of the at least one opening in the first side.

4. The shielding structure of claim 1 , wherein the patterned shielding layer comprises a first sub patterned shielding layer and a second sub patterned shielding layer, wherein the ring structure surrounds the first sub patterned shielding layer and the second sub patterned shielding layer.

5. The shielding structure of claim 4 , wherein the first sub patterned shielding layer comprises a first sub side, a second sub side and a third sub side, and the second sub patterned shielding layer comprises a fourth sub side, a fifth sub side and a sixth sub side, wherein the ring structure is further configured to be disposed along the first sub side, the second sub side, the third sub side, the fourth sub side, the fifth sub side and the sixth sub side.

6. The shielding structure of claim 5 , wherein the ring structure comprises a first opening of the at least one opening in the first sub side.

7. The shielding structure of claim 5 , wherein a seventh sub side is comprised between the first sub patterned shielding layer and the second sub patterned shielding layer, and the ring structure is disposed along the seventh sub side.

8. The shielding structure of claim 7 , wherein the ring structure comprises a first opening of the at least one opening in the first sub side, and the ring structure comprises a second opening of the at least one opening in the seventh sub side.

9. The shielding structure of claim 8 , wherein the first sub side and the seventh sub side are located in a second direction.

10. The shielding structure of claim 7 , wherein the ring structure comprises a first opening of the at least one opening in the first sub side, and the ring structure comprises a second opening of the at least one opening in the fourth sub side.

11. The shielding structure of claim 10 , wherein the first sub side and the fourth sub side are located in a second direction.

12. The shielding structure of claim 11 , wherein the seventh sub side is located in the second direction.

13. The shielding structure of claim 11 , wherein the seventh sub side is located in a third direction.

14. The shielding structure of claim 7 , wherein the ring structure forms a first sub ring structure in the first sub side, the second sub side, the third sub side and the seventh sub side, and forms a second sub ring structure in the fourth sub side, the fifth sub side, the sixth sub side and the seventh sub side.

15. An inductor device, comprising:

an inductor structure;

a patterned shielding layer, extended along a plane and located between the inductor structure and a substrate; and

a ring structure, coupled to and stacked on the patterned shielding layer along a first direction, wherein the first direction is perpendicular to the plane, wherein the ring structure surrounds the patterned shielding layer, wherein the ring structure comprises a first opening and a ground terminal, wherein the ring structure partially overlaps the patterned shielding layer in the first direction.

16. The inductor device of claim 15 , wherein the first opening of the ring structure and a second opening of the inductor structure overlap in a second direction.

17. The inductor device of claim 15 , wherein the ring structure comprises a second opening, wherein the inductor structure comprises a connection part, and the connection part comprises an intersection part at the second opening of the ring structure.

18. The inductor device of claim 15 , wherein the inductor structure is located at an inner side of the ring structure.

19. The inductor device of claim 15 , wherein the ring structure comprises an area, and the patterned shielding layer is disposed in the area.

20. The inductor device of claim 15 , wherein the ground terminal and the first opening overlap in a second direction.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 16, 2021
From: YEN, HSIAO-TSUNG; HAN, YI-SYUE
To: REALTEK SEMICONDUCTOR CORPORATION
Reel/Frame 057184/0956 →
Priority Claims (1)
TW 110106004 · Feb 20, 2021 · national
Continuity (1)
Related Publication 20220270811A1 · Aug 25, 2022