Apparatuses including contacts in a peripheral region
Apparatuses and methods for manufacturing semiconductor memory devices are described. An example method includes: forming first interconnects; forming first dielectric layers above the first interconnects in a peripheral region; removing portions of the first dielectric layers to form first openings through the first dielectric layers in the peripheral region to expose the first interconnects at bottoms of the first openings; depositing first conductive material in the peripheral region to form first contact portions in the first openings; forming second dielectric layers on the first dielectric layers and the first contact portions in the peripheral region; removing second portions of the second dielectric layers to form second openings through the second dielectric layers to expose the first contact portions at bottoms of the second openings; depositing second conductive material to form a plurality of second contact portions in the corresponding first openings; and forming second interconnects on the second contact portions.
1. An apparatus comprising:
a plurality of first interconnects extending in a first direction;
a plurality of second interconnects above the plurality of first interconnects, the plurality of second interconnects extending in a second direction different from the first direction;
a plurality of contacts, wherein each contact of the plurality of contacts comprises:
a first portion coupled to a corresponding first interconnect of the plurality of first interconnects; and
a second portion on the first portion, the second portion coupled to a corresponding second interconnect of the plurality of second interconnects,
wherein the first portion has a first cross section including:
a first length in the first direction; and
a first width that is perpendicular to the first length and less than the first length, and
wherein the second portion has a second cross section including:
a second length in the second direction; and
a second width perpendicular to the second length and less than the second length.
2. The apparatus of claim 1 , wherein the first direction and the second direction are perpendicular to each other when viewed from above the apparatus.
3. The apparatus of claim 1 , wherein the first cross section has an oval shape with a long diameter in the first direction.
4. The apparatus of claim 3 , wherein the first cross section has a short diameter that is smaller than a sum of a width of each first interconnect and an interval between adjacent first interconnects of the plurality of first interconnects.
5. The apparatus of claim 1 , wherein the second cross section has an oval shape with a long diameter in the second direction.
6. The apparatus of claim 5 , wherein the second cross section has a short diameter that is smaller than a sum of a width of each second interconnect and an interval between adjacent second interconnects of the plurality of second interconnects.
7. The apparatus of claim 1 , wherein the one or more first interconnects, the one or more second interconnects, and the one or more contacts include one or more conductive materials.
8. The apparatus of claim 7 , wherein the one or more contacts comprises tungsten.
9. The apparatus of claim 7 , wherein the first interconnect and the second interconnect comprise at least one of copper or aluminum.
10. The apparatus of claim 1 , further comprising:
a memory array region comprising a plurality of memory cells; and
a peripheral region,
wherein the plurality of contacts are disposed in the peripheral region.
11. The apparatus of claim 10 , wherein each memory cell of the plurality of memory cells further comprises:
a transistor on a substrate;
a capacitor on the transistor including:
a lower capacitor electrode coupled to the transistor; and
an upper capacitor electrode; and
a power supply line coupled to the upper capacitor electrode;
wherein a height of the first portion from the substrate and a height of a portion of the power supply line from the substrate in the memory array region are substantially the same.
12. The apparatus of claim 11 , wherein the portion of the power supply line is a first portion,
wherein the power supply line includes a second portion in the peripheral region under the plurality of first interconnects.
13. An apparatus comprising:
a first interconnect extending in a first direction;
a second interconnect above the first interconnect, the second interconnect extending in a second direction different from the first direction; and
a contact coupled between the first interconnect and the second interconnect, wherein the contact comprises:
a first portion on the first interconnect, wherein a cross section of the first portion has an oval shape having a long diameter in the first direction; and
a second portion between the first portion and the second interconnect, wherein a cross section of the second portion has an oval shape having a long diameter in the second direction.
14. The apparatus of claim 13 , further comprising:
a substrate;
a memory region and a peripheral region;
a plurality of capacitors of a plurality of memory cells disposed in the memory array region and above the substrate; and
a power supply line extending above the plurality of capacitors in the memory array region and further extending above the substrate and under the plurality of first interconnects in the peripheral region.
15. The apparatus of claim 14 , wherein the cross section of the first portion has a short diameter in the second direction that is smaller than a sum of a width of each first interconnect and a first interval between the first interconnect and another first interconnect adjacent to the first interconnect, and
wherein the cross section of the second portion has a short diameter that is smaller than a sum of a width of the second interconnect and a second interval between the second interconnect and another second interconnect adjacent to the second interconnect.