Substrate processing apparatus and substrate processing method
A substrate processing apparatus for cleaning and drying a substrate under processing, including supplying a cleaning liquid onto the substrate under processing to form a cleaning liquid layer, supplying a gas onto the substrate under processing to partially remove the cleaning liquid layer and thus generate a first dry region on the substrate under processing, expanding the first dry region to generate a second dry region by controlling the movement speed of the boundary between the cleaning liquid layer and the first dry region to be less than or equal to a predetermined speed, and further expanding the second dry region to generate a third dry region.
1. A substrate processing apparatus for cleaning and drying a substrate under processing, comprising:
a substrate holding portion to hold the substrate;
a liquid nozzle that supplies a liquid onto the substrate under processing to form a liquid layer;
a gas nozzle that supplies a gas onto the substrate under processing to form a dry region;
a controller programmed to control the liquid nozzle and the gas nozzle; and
a monitoring mechanism configured to monitor an interface of the dry region constituting a boundary between the liquid layer and the dry region,
wherein:
the controller is programmed to carry out the substrate processing including:
(1) a liquid layer forming step to form and expand the liquid layer on the substrate;
(2) a dry region forming step to form a dry region and to expand the dry region to a predetermined size; and
(3) a dry region expanding step to further expand the dry region from the predetermined size, and
wherein the controller is programmed to, in the dry region forming step, while causing the liquid nozzle to supply the liquid and causing the gas nozzle to supply the gas, based on a monitoring result of the monitoring mechanism, adjust at least one of a liquid landing position of the liquid on the substrate under processing and a gas landing position of the gas on the substrate under processing to change a relative distance between the landing position of the liquid and the landing position of the gas from a first distance to a second distance being more than the first distance,
form the dry region by controlling a movement speed of the interface of the dry region to be less than or equal to a predetermined speed.
2. The substrate processing apparatus according to claim 1 , wherein the controller is configured to, based on the monitoring result of the monitoring mechanism, control an oscillation state or an injection angle of the liquid nozzle.
3. The substrate processing apparatus according to claim 1 , wherein
the liquid nozzle has an actuator to oscillate the liquid nozzle, and
the controller is configured to, based on the monitoring result of the monitoring mechanism, until the dry region is expanded to the predetermined size, form the dry region by controlling a liquid injection direction to move from a first direction to a second direction by the actuator, while causing the gas nozzle to supply the gas.
4. The substrate processing apparatus according to claim 1 , wherein
the liquid nozzle has a horizontal moving mechanism, and
the controller is configured to, based on the monitoring result of the monitoring mechanism, until the dry region is expanded to the predetermined size, form the dry region by controlling the liquid landing position to move from a first position to a second position by the horizontal movement mechanism, while causing the gas nozzle to supply the gas.
5. The substrate processing apparatus according to claim 1 , wherein
the liquid nozzle includes a first liquid nozzle and a second liquid nozzle, the second liquid nozzle being located further to the gas nozzle than the first nozzle, and
the controller is configured to, based on the monitoring result of the monitoring mechanism, until the dry region is expanded to the predetermined size, form the dry region by controlling the liquid nozzle to change from a first injecting state in which the liquid is injected onto a first position by at least the first liquid nozzle to a second injecting state in which the liquid is injected onto a second position by the second liquid nozzle, while causing the gas nozzle to supply the gas.
6. The substrate processing apparatus according to claim 5 , wherein the controller is configured to adjust injecting the liquid from the first liquid nozzle and the second liquid nozzle and stopping injecting the liquid, and the liquid nozzle is configured to, in the first injecting state, provide the liquid onto the first position by injecting the liquid by the first liquid nozzle and the second liquid nozzle, and in the second injecting state, provide the liquid onto the second position by stopping injecting the liquid by the first liquid nozzle and by injecting the liquid by the second liquid nozzle.
7. The substrate processing apparatus according to claim 1 , wherein the controller is configured to adjust an angle of the liquid injected from the liquid nozzle, and the controller is configured to, based on the monitoring result of the monitoring mechanism, until the dry region is expanded to the predetermined size, form the dry region by controlling the liquid nozzle to change the angle of the liquid injected from the liquid nozzle from a first angle to a second angle, while causing the gas nozzle to supply the gas.
8. The substrate processing apparatus according to claim 1 , wherein
a shape of the dry region is a circle, and
a radius of the dry region in the predetermined size is equal to or less than the second distance.
9. A substrate processing apparatus for cleaning and drying a substrate under processing, comprising:
a substrate holding portion to hold the substrate;
a liquid nozzle that supplies a liquid onto the substrate under processing to form a liquid layer;
a gas nozzle that supplies a gas onto the substrate under processing to form a dry region;
a controller programmed to control the liquid nozzle and the gas nozzle; and
a monitoring mechanism configured to monitor an interface of the dry region constituting a boundary between the liquid layer and the dry region,
wherein:
the controller is programmed to, carry out the substrate processing including:
(1) a liquid layer forming step to form and expand the liquid layer on the substrate;
(2) a dry region forming step to form a dry region and to expand the dry area to a predetermined size; and
(3) a dry region expanding step to further expand the dry region from the predetermined size,
the controller is programmed to, in the liquid layer forming step, control a liquid landing position at which the liquid provided from the liquid nozzle lands on the substrate to be a predetermined position, thereby forming the liquid layer, and
the controller is programmed to, in the dry region forming step, control a gas landing position at which the gas provided from the gas nozzle lands on the substrate to be the predetermined position, thereby causing the dry region to be in a first size, and to control the liquid landing position to move closer the predetermined position on the substrate, thereby causing the dry region to be reduced to a second size, the second size being smaller than the first size, and
the controller is programmed to, in the dry region expanding step, control the liquid nozzle to move the liquid landing position, thereby causing the dry region to be expanded to a third size, the third size being larger than the second size.
10. The substrate processing apparatus according to claim 9 , wherein
a shape of the dry region is a circle, and
a radius of the dry region in the second size is less than a distance between the gas nozzle and the liquid nozzle.
11. The substrate processing apparatus according to claim 9 , wherein
the predetermined position on the substrate is a central portion of the substrate.
12. The substrate processing apparatus according to claim 9 , wherein the controller is configured to, based on the monitoring result of the monitoring mechanism, control an oscillation state or an injection angle of the liquid nozzle.