Liquid ejection head substrate and liquid ejection head
Long-term reliability of a liquid ejection head substrate and a liquid ejection head is improved by suppressing dissolution of an intermediate layer due to anodization. A liquid ejection head substrate including: a flow passage forming member having an ejection orifice and a flow passage; a heating resistance element for ejecting a liquid; an insulating layer covering the heating resistance element; a protecting layer whose surface is exposed to the flow passage; and an intermediate layer provided between the flow passage forming member and the protecting layer, in which the intermediate layer contains a material represented by a following composition formula (I): Si w1 O x1 C y1 (I), 39≤w1≤62 (at. %), 32≤x1≤55 (at. %), and 6≤y1≤29 (at. %), and w1+x1+y1=100 (at %).
1. A liquid ejection head substrate comprising:
a flow passage forming member having an ejection orifice and a flow passage;
a heating resistance element for ejecting a liquid;
an insulating layer covering the heating resistance element;
a conductive protecting layer provided on or above the insulating layer and whose surface is exposed to the flow passage; and
an intermediate layer provided between the flow passage forming member and the conductive protecting layer, wherein
the intermediate layer contains a material represented by the following composition formula (I):
Si w1 O x1 C y1 (I)
in formula (I), 39≤w1≤62 at. %, 32≤x1≤55 at. %, 6≤y1≤29 at. %, and w1+x1+y1=100 at %.
2. The liquid ejection head substrate according to claim 1 , wherein
w1, x1, and z1 in the composition formula (I) satisfy the following relational formula:
39≤w1≤43 at. %,
35≤x1≤44 at. %, and
13≤y1≤24 at. %.
3. The liquid ejection head substrate according to claim 1 , wherein
the intermediate layer has a layer made of the material represented by the composition formula (I), and a film thickness of the intermediate layer is 100 nm or more.
4. The liquid ejection head substrate according to claim 1 , wherein
the intermediate layer includes a lower layer in contact with the conductive protecting layer and an upper layer covering the lower layer, the lower layer contains the material represented by the composition formula (I), and the upper layer contains a material represented by the following composition formula (II):
Si w2 C y2 N z2 (II)
in formula (II), 30≤w2≤59 at. %, y2≥5 at. %, z2≥15 at. %, and w2+y2+z2=100 at %.
5. The liquid ejection head substrate according to claim 4 , wherein
the upper layer of the intermediate layer is a layer made of the material represented by the composition formula (II), and a film thickness of the upper layer is 50 nm or more.
6. The liquid ejection head substrate according to claim 1 , wherein
a film thickness of the intermediate layer is 300 nm or less.
7. The liquid ejection head substrate according to claim 1 , wherein
the conductive protecting layer contains tantalum.
8. The liquid ejection head substrate according to claim 1 , wherein
the conductive protecting layer contains iridium.
9. The liquid ejection head substrate according to claim 1 , further comprising:
an organic intermediate layer between the flow passage forming member and the intermediate layer.
10. A liquid ejection head comprising:
a liquid ejection head substrate including a flow passage forming member having an ejection orifice and a flow passage, a heating resistance element for ejecting a liquid, an insulating layer covering the heating resistance element, a conductive protecting layer provided on or above the insulating layer and whose surface is exposed to the flow passage; and an intermediate layer provided between the flow passage forming member and the conductive protecting layer, wherein
the intermediate layer contains a material represented by the following composition formula (I):
Si w1 O x1 C y1 (I)
in formula (I), 39≤w1≤62 at. %, 32≤x1≤55 at. %, 6≤y1≤29 at. %, and w1+x1+y1=100 at %.
11. A liquid ejection head substrate comprising:
a flow passage forming member having an ejection orifice and a flow passage;
a heating resistance element for ejecting a liquid;
an insulating layer covering the heating resistance element;
a conductive protecting layer provided on or above the insulating layer and whose surface is exposed to the flow passage; and
an intermediate layer provided between the flow passage forming member and the conductive protecting layer, wherein
the intermediate layer contains a material represented by the following composition formula (III):
Si w3 O x3 C y3 N z3 (III)
in formula (III), 37≤w3≤60 at. %, 30≤x3≤53 at. %, 6≤y3≤29 at. %, 4≤z3≤9 at. %, and w3+x3+y3+z3=100 at %.
12. The liquid ejection head substrate according to claim 11 , wherein
w3, x3, y3, and z3 in the composition formula (III) satisfy
the following relational formula:
37≤w3≤39 at. %,
33≤x3≤41 at. %,
12≤y3≤22 at. %, and
7≤z3≤8 at. %.
13. The liquid ejection head substrate according to claim 11 , wherein
the intermediate layer has a layer made of the material represented by the composition formula (III), and a film thickness of the intermediate layer is 100 nm or more.
14. The liquid ejection head substrate according to claim 11 , wherein
a film thickness of the intermediate layer is 300 nm or less.
15. The liquid ejection head substrate according to claim 11 , wherein
the conductive protecting layer contains tantalum.
16. The liquid ejection head substrate according to claim 11 , wherein
the conductive protecting layer contains iridium.
17. The liquid ejection head substrate according to claim 11 , further comprising:
an organic intermediate layer between the flow passage forming member and the intermediate layer.