Method of forming a narrow trench

1. A method of forming a pattern on a substrate, the method comprising:

forming a first layer on an underlying layer of the substrate, the first layer patterned to have a first structure;

depositing a grafting material on side surfaces of the first structure, the grafting material including a solubility-shifting material;

diffusing the solubility-shifting material by a predetermined distance into a neighboring structure that abuts the solubility-shifting material, the solubility-shifting material changing solubility of the neighboring structure in a developer; and

removing soluble portions of the neighboring structure using the developer to form a second structure, wherein

the first structure comprises a first opening of the first layer,

the neighboring structure is a portion of the first layer,

the first layer comprises a photoresist material, and

the second structure comprises a second opening of the first layer, wherein a latent pattern of the second opening is formed by patterned exposure of the first layer to actinic radiation prior to diffusing the solubility-shifting material.

2. The method of claim 1 , wherein:

the solubility-shifting material renders the neighboring structure insoluble to the developer; and

the first opening is spaced apart from the second opening by at least the predetermined distance.

3. The method of claim 1 , wherein:

the solubility-shifting material renders the neighboring structure soluble to the developer; and

the first opening is joined with the second opening.

4. The method of claim 1 , wherein:

the solubility-shifting material comprises a thermal acid generator; and the method further comprises:

activating the thermal acid generator by heat prior to diffusing the solubility-shifting material into the filler material.

5. The method of claim 1 , wherein:

the solubility-shifting material comprises a photo acid generator; and the method further comprises:

activating the photo acid generator by actinic radiation prior to diffusing the solubility-shifting material into the filler material.

6. The method of claim 5 , wherein the actinic radiation is performed with a photomask so that the solubility-shifting material is activated by patterned exposure of actinic radiation.

7. The method of claim 1 , wherein the solubility-shifting material comprises a base that neutralizes an acid.

8. A method of forming a pattern on a substrate, comprising:

forming a patterned first layer on an underlying layer of the substrate, the patterned first layer including a first material and the underlying layer including a second material that is chemically different from the first material, the patterned first layer having a first structure;

depositing a grafting material on the substrate, the grafting material selectively adhering to uncovered surfaces of the first structure, the grafting material including a solubility-shifting material;

depositing a filler material on the substrate, the filler material abutting the grafting material;

diffusing the solubility-shifting material by a predetermined distance into an abutting portion of the filler material, the solubility-shifting material changing solubility of the abutting portion of the filler material in a developer; and

removing soluble portions of the filler material using the developer so that the remaining portions of the filler material form a second structure, wherein

the solubility-shifting material renders the abutting portion of the filler material insoluble to the developer; and

the first structure is in contact with the second structure.

9. The method of claim 8 , wherein the solubility-shifting material comprises a base that neutralizes an acid.

10. The method of claim 8 , wherein the filler material comprises a photoresist material.

11. The method of claim 10 , further comprising forming a latent pattern of the second structure in the photoresist material via patterned exposure of actinic radiation, prior to diffusing the solubility-shifting material into the filler material.

12. The method of claim 11 , wherein the latent pattern overlaps the abutting portion of the photoresist material.

13. The method of claim 8 , wherein the first structure comprises a mandrel or a line.

14. The method of claim 13 , further comprising hardening the mandrel or the line prior to depositing the grafting material on the substrate.

15. A method of forming a pattern on a substrate, comprising:

forming a patterned first layer on an underlying layer of the substrate, the patterned first layer including a first material and the underlying layer including a second material that is chemically different from the first material, the patterned first layer having a first structure;

depositing a grafting material on the substrate, the grafting material selectively adhering to uncovered surfaces of the first structure, the grafting material including a solubility-shifting material;

depositing a filler material on the substrate, the filler material abutting the grafting material;

diffusing the solubility-shifting material by a predetermined distance into an abutting portion of the filler material, the solubility-shifting material changing solubility of the abutting portion of the filler material in a developer; and

removing soluble portions of the filler material using the developer so that the remaining portions of the filler material form a second structure,

wherein the solubility-shifting material comprises a base that neutralizes an acid.

16. The method of claim 15 , wherein the filler material comprises a photoresist material.

17. The method of claim 16 , further comprising forming a latent pattern of the second structure in the photoresist material via patterned exposure of actinic radiation, prior to diffusing the solubility-shifting material into the filler material.

18. The method of claim 17 , wherein the latent pattern overlaps the abutting portion of the photoresist material.

19. The method of claim 15 , wherein the first structure comprises a mandrel or a line.

20. The method of claim 19 , further comprising hardening the mandrel or the line prior to depositing the grafting material on the substrate.