Underfill structure for semiconductor packages and methods of forming the same
A method for forming an underfill structure and semiconductor packages including the underfill structure are disclosed. In an embodiment, the semiconductor package may include a package including an integrated circuit die; an interposer bonded to the integrated circuit die by a plurality of die connectors; and an encapsulant surrounding the integrated circuit die. The semiconductor package may further include a package substrate bonded to the interposer by a plurality of conductive connectors; a first underfill between the package and the package substrate, the first underfill having a first coefficient of thermal expansion (CTE); and a second underfill surrounding the first underfill, the second underfill having a second CTE less than the first CTE.
1. A device comprising:
a first package comprising:
a first integrated circuit die;
an encapsulant around the first integrated circuit die; and
a redistribution layer over the encapsulant and the first integrated circuit die;
a plurality of functional connectors;
a second package bonded to the first package by the plurality of functional connectors, wherein the functional connectors and the redistribution layer electrically couple a second integrated circuit die of the second package to the first integrated circuit die;
a first underfill between the first package and the second package, the first underfill surrounding the plurality of functional connectors, wherein a first width of the first underfill adjacent the first package is less than a second width of the first underfill adjacent the second package; and
a second underfill surrounding the first underfill, the second underfill having a different material composition than the first underfill, wherein a topmost extent of the second underfill is disposed above a topmost surface of the first underfill.
2. The device of claim 1 , wherein the second underfill has a lower coefficient of thermal expansion (CTE) than the first underfill.
3. The device of claim 1 , wherein the second underfill extends below the second package directly between the first underfill and the redistribution layer.
4. The device of claim 1 , wherein the second underfill is in contact with a first side surface of the second package and a second side surface of the second package opposite the first side surface of the second package.
5. The device of claim 1 , wherein a lateral periphery of the first underfill extends beyond a lateral periphery of the first integrated circuit die.
6. The device of claim 1 , wherein the second underfill extends from a top surface of the redistribution layer to a sidewall of the second package.
7. The device of claim 1 , wherein a third width of the second underfill proximal the first package is greater than a fourth width of the second underfill proximal the second package and distal the first package.
8. A device comprising:
a first package comprising:
a front-side redistribution structure;
a first integrated circuit die over the front-side redistribution structure;
an encapsulant surrounding the first integrated circuit die; and
a back-side redistribution structure over the encapsulant and the first integrated circuit die;
a second package bonded to the first package by a conductive connector;
a first underfill between the first package and the second package, the first underfill having a first coefficient of thermal expansion (CTE), wherein a first width of the first underfill extending along a surface of the second package is greater than a second width of the first underfill extending along a surface of the first package; and
a second underfill surrounding the first underfill, the second underfill having a second CTE less than the first CTE, wherein the second underfill is in direct contact with the back-side redistribution structure and a substrate of the second package.
9. The device of claim 8 , wherein the second package comprises:
a second integrated circuit die over the substrate; and
a molding material over the substrate and surrounding the second integrated circuit die, wherein the second underfill is in direct contact with the molding material.
10. The device of claim 9 , wherein the second integrated circuit die is electrically coupled to the conductive connector by a wire bond extending through the molding material and a through via extending through the substrate.
11. The device of claim 8 , wherein the first package further comprises a via over the front-side redistribution structure, wherein the encapsulant surrounds the via, wherein the first integrated circuit die is electrically coupled to the back-side redistribution structure through the front-side redistribution structure and the via.
12. The device of claim 8 , further comprising an adhesive bonding the first integrated circuit die to the back-side redistribution structure.
13. The device of claim 8 , wherein the first underfill tapers from the second package toward the first package and wherein the second underfill tapers from the first package toward the second package.
14. A device comprising:
a die attached to a back-side redistribution structure;
an encapsulant encapsulating the die;
a front-side redistribution structure over the die and the encapsulant;
a conductive connector over the back-side redistribution structure;
a package bonded to the back-side redistribution structure through the conductive connector;
a first underfill deposited between the back-side redistribution structure and the package, wherein the first underfill surrounds the conductive connector, wherein a width of the first underfill along the back-side redistribution structure is less than a width of the first underfill along the package; and
a second underfill surrounding the first underfill, the second underfill having a lower coefficient of thermal expansion (CTE) than the first underfill, the second underfill having a first sidewall contacting the first underfill, the second underfill having a second sidewall opposite the first sidewall, the second sidewall extending from a sidewall of the package to a surface of the back-side redistribution structure.
15. The device of claim 14 , wherein the first underfill comprises curved sidewalls.
16. The device of claim 14 , wherein the first underfill comprises an epoxy material having a weight percentage of silicon in a range of 60% to 70%.
17. The device of claim 14 , wherein the first underfill has a first CTE in a range of 20 ppm/° C. to 30 ppm/° C.
18. The device of claim 17 , wherein a ratio of the first CTE of the first underfill to a second CTE of the second underfill is in a range of 4:1 to 2:1.
19. The device of claim 14 , wherein the second underfill has a higher concentration of silicon by weight than the first underfill.
20. The device of claim 14 , further comprising a via over the back-side redistribution structure adjacent the die, wherein the via is encapsulated by the encapsulant, and wherein the die is electrically coupled to the front-side redistribution structure though the back-side redistribution structure and the via.