Lateral diffused metal oxide semiconductor device
A lateral diffused metal oxide semiconductor (LDMOS) device includes a first fin-shaped structure on a substrate, a second fin-shaped structure adjacent to the first fin-shaped structure, a shallow trench isolation (STI) between the first fin-shaped structure and the second fin-shaped structure, a first gate structure on the first fin-shaped structure, a second gate structure on the second fin-shaped structure, and an air gap between the first gate structure and the second gate structure.
1. A lateral diffused metal oxide semiconductor (LDMOS) device, comprising:
a first fin-shaped structure on a substrate;
a second fin-shaped structure adjacent to the first fin-shaped structure;
a third fin-shaped structure between the first fin-shaped structure and the second fin-shaped structure;
a first shallow trench isolation (STI) between the first fin-shaped structure and the third fin-shaped structure;
a second STI between the second fin-shaped structure and the third fin-shaped structure;
a first gate structure on the first fin-shaped structure;
a second gate structure on the second fin-shaped structure;
a third gate structure on the third fin-shaped structure; and
a first air gap between the first gate structure and the third gate structure.
2. The LDMOS device of claim 1 , further comprising:
a source region adjacent to one side of the first gate structure on the first fin-shaped structure;
a drain region adjacent to one side of the second gate structure on the second fin-shaped structure;
an interlayer dielectric (ILD) layer around the first gate structure and the second gate structure; and
a first contact plug on the source region; and
a second contact plug on the drain region.
3. The LDMOS device of claim 2 , wherein the first air gap is in the ILD layer.
4. The LDMOS device of claim 1 , wherein a width of the second gate structure is less than a width of the first gate structure.
5. The LDMOS device of claim 1 , wherein the first air gap is directly on the STI.
6. The LDMOS device of claim 1 , wherein the first gate structure and the second gate structure comprise metal gates.
7. The LDMOS device of claim 1 , further comprising a second air gap between the second gate structure and the third gate structure.
8. The LDMOS device of claim 7 , wherein the second air gap is directly on the STI.
9. A lateral diffused metal oxide semiconductor (LDMOS) device, comprising:
a first fin-shaped structure on a substrate;
a second fin-shaped structure adjacent to the first fin-shaped structure;
a shallow trench isolation (STI) between the first fin-shaped structure and the second fin-shaped structure;
a first gate structure on the first fin-shaped structure;
a second gate structure on the second fin-shaped structure;
a third gate structure on the STI; and
a first air gap between the first gate structure and the third gate structure.
10. The LDMOS device of claim 9 , further comprising:
a source region adjacent to one side of the first gate structure on the first fin-shaped structure;
a drain region adjacent to one side of the second gate structure on the second fin-shaped structure;
an interlayer dielectric (ILD) layer around the first gate structure and the second gate structure; and
a first contact plug on the source region; and
a second contact plug on the drain region.
11. The LDMOS device of claim 10 , wherein the first air gap is in the ILD layer.
12. The LDMOS device of claim 9 , wherein a width of the second gate structure is less than a width of the first gate structure.
13. The LDMOS device of claim 9 , wherein the first gate structure and the second gate structure comprise metal gates.
14. The LDMOS device of claim 13 , further comprising a second air gap between the second gate structure and the third gate structure.