Near-infrared absorbers, near-infrared absorbing/blocking films and photoelectric devices and organic sensors and electronic devices

1. A near-infrared absorber, comprising:

a compound represented by Chemical Formula 1:

wherein, in Chemical Formula 1,

Ar 1 is a first moiety represented by Chemical Formula A-1, the first moiety including a first aromatic ring and left and right linking groups:

wherein, in Chemical Formula A-1,

separate adjacent pairs of *'s inside the first aromatic ring are linking portions with separate, respective ones of an N—X 1 —N-containing pentagonal ring of Chemical Formula 1 and an N-containing hexagonal ring of Chemical Formula 1, and

*'s of the left and right linking groups are portions linked to separate, respective ones of L 1 and L 2 of Chemical Formula 1,

Ar 2 is a second moiety represented by Chemical Formula B-3b, the second moiety including a second aromatic ring:

wherein, in Chemical Formula B-3b,

Ar 3 and Ar 4 are independently a substituted or unsubstituted C6 to C30 arene group or a substituted or unsubstituted C3 to C30 heteroarene group, and

*'s inside the second aromatic ring are linking portions with the N-containing hexagonal ring of Chemical Formula 1,

X 1 is O, S, Se, Te, S(═O), S(═O 2 ), NR a , CR b R c , or SiR d R e , wherein R a , R b , R c , and R d are independently hydrogen, a C1 to C6 alkyl group, a C1 to C6 haloalkyl group, a C6 to C12 aryl group, a C3 to C12 heteroaryl group, a halogen, a cyano group, or a combination thereof,

L 1 and L 2 are same or different and are each represented by Chemical Formula C-1:

wherein, in Chemical Formula C-1,

Y 1 is O, S, Se, Te, S(═O), S(═O) 2 , NR a , or SiR b R c , wherein R a , R b , and R c are independently hydrogen, a C1 to C6 alkyl group, a C1 to C10 haloalkyl group, —SiH 3 , a C1 to C10 alkylsilyl group, —NH 2 , a C1 to C10 alkylamine group, a C6 to C12 aryl group, a C3 to C12 heteroaryl group, a halogen, a cyano group, or a combination thereof,

R b and R c are independently present or linked to each other to form a ring, and

each * is a linking point with Chemical Formula 1,

R 1 , R 2 , R 3 , and R 4 are independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 to C30 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, a substituted or unsubstituted silyl group, a halogen, or a combination thereof, and

R 1 and R 2 are independently present or linked to each other to form a ring, and R 3 and R 4 are independently present or linked to each other to form a separate ring.

2. The near-infrared absorber of claim 1 , wherein

the second moiety represented by Chemical Formula B-3b is represented by Chemical Formula B-3bb, each moiety including at least one aromatic ring:

wherein, in Chemical Formula B-3bb,

hydrogen of each aromatic ring is present or is replaced by a halogen, a cyano group, a C1 to C10 alkyl group, a C1 to C10 haloalkyl group, —SiH 3 , a C1 to C10 alkylsilyl group, a C6 to C20 aryl group, or a C3 to C20 heteroaryl group,

*'s inside the at least one aromatic ring are linking portions with an N-containing hexagonal ring of Chemical Formula 1, and

X a and X b are independently —O—, —S—, —Se—, —Te—, —NR a —, —SiR b R c —, or —GeR d R e —, wherein R a , R b , R c , R d , and R e are independently hydrogen, a halogen, a substituted or unsubstituted C1 to C10 alkyl group, or a substituted or unsubstituted C6 to C10 aryl group.

3. The near-infrared absorber of claim 1 , wherein in Chemical Formula 1, *—N(R 1 )(R 2 ) and *—N(R 3 )(R 4 ) are independently represented by Chemical Formula D-1 or Chemical Formula D-2:

wherein, in Chemical Formula D-1,

Ar 5 and Ar 6 are independently a substituted or unsubstituted C6 to C30 aryl group or a substituted or unsubstituted C3 to C30 heteroaryl group, and

* is a linking point with Chemical Formula 1,

wherein, in Chemical Formula D-2,

Ar 7 and Ar 8 are independently a substituted or unsubstituted C6 to C30 arene group or a substituted or unsubstituted C3 to C30 heteroarene group,

G is a single bond, —O—, —S—, —Se—, —Te—, —N═, —NR a —, —SiR b R c —, —GeR d R e —, —(CR f R g ) n —, or —(C(R h )═C(R i ))—, wherein R a , R b , R c , R d , R e , R f , R g , R h , and R i are independently hydrogen, a halogen, a substituted or unsubstituted C1 to C10 alkyl group, or a substituted or unsubstituted C6 to C10 aryl group, wherein R b and R c , R d and R e , R f and R g , or R h and R i are independently present or are linked to each other to form a ring, and n of —(CR f R g ) n — is an integer of 1 or 2, and

* is a linking point with Chemical Formula 1.

4. The near-infrared absorber of claim 3 , wherein Chemical Formula D-1 is represented by Chemical Formula D-1a or D-1b:

wherein, in Chemical Formula D-1a,

Z 1 to Z 10 are independently N or CR a , wherein R a is hydrogen, a C1 to C6 alkyl group, a C1 to C10 haloalkyl group, —SiH 3 , a C1 to C10 alkylsilyl group, —NH 2 , a C1 to C10 alkylamine group, a C6 to C12 aryl group, a C3 to C12 heteroaryl group, a halogen, a cyano group, or a combination thereof,

when Z 1 to Z 10 are CR x , R x 's are independently present or two adjacent groups of Z 1 to Z 10 are linked to each other to form a 5-membered aromatic ring or a 6-membered aromatic ring, and

* is a linking point with Chemical Formula 1,

wherein, in Chemical Formula D-1b,

X a and X b are independently —O—, —S—, —Se—, —Te—, —NR a —, —SiR b R c —, or —GeR d R e —, wherein R a , R b , R c , R d , and R e are independently hydrogen, a halogen, a substituted or unsubstituted C1 to C10 alkyl group, or a substituted or unsubstituted C6 to C10 aryl group,

Z 1 to Z 6 are independently N or CR x , wherein R x is hydrogen, a C1 to C6 alkyl group, a C1 to C10 haloalkyl group, —SiH 3 , a C1 to C10 alkylsilyl group, —NH 2 , a C1 to C10 alkylamine group, a C6 to C12 aryl group, a C3 to C12 heteroaryl group, a halogen, a cyano group, or a combination thereof,

when Z 1 to Z 6 are CR x , R x 's are independently present or two adjacent groups of Z 1 to Z 6 are linked to each other to form a 5-membered aromatic ring or a 6-membered aromatic ring, and

* is a linking point with Chemical Formula 1.

5. The near-infrared absorber of claim 3 , wherein Chemical Formula D-2 is represented by Chemical Formula D-2a, Chemical Formula D-2b, or Chemical Formula D-2c:

wherein, in Chemical Formula D-2a,

G is a single bond, —O—, —S—, —Se—, —Te—, —N═, —NR a —, —SiR b R c —, —GeR d R e —, —(CR f R g ) n —, or —(C(R h )═C(R i ))—, wherein R a , R b , R c , R d , R e , R f , R g , R h , and R i are independently hydrogen, a halogen, a substituted or unsubstituted C1 to C10 alkyl group, or a substituted or unsubstituted C6 to C10 aryl group, wherein R b and R c , R d and R e , R f and R g , or R h and R i are independently present or are linked to each other to form a ring, and n of —(CR f R g ) n — is an integer of 1 or 2,

Z 1 to Z 8 are independently N or CR x , wherein R x is hydrogen, a C1 to C6 alkyl group, a C1 to C10 haloalkyl group, —SiH 3 , a C1 to C10 alkylsilyl group, —NH 2 , a C1 to C10 alkylamine group, a C6 to C12 aryl group, a C3 to C12 heteroaryl group, a halogen, a cyano group, or a combination thereof,

when Z 1 to Z 8 are CR x , R x may independently be present or two adjacent groups of Z 1 to Z 8 may be linked to each other to form a 5-membered aromatic ring or a 6-membered aromatic ring, and

*is a linking point with Chemical Formula 1,

wherein, in Chemical Formula D-2b and Chemical Formula D-2c,

G is a single bond, —O—, —S—, —Se—, —Te—, —N═, —NR a —, —SiR b R c —, —GeR d R e —, —(CR f R g ) n —, or —(C(R h )═C(R i ))—, wherein R a , R b , R c , R d , R e , R f , R g , R h , and R i are independently hydrogen, a halogen, a substituted or unsubstituted C1 to C10 alkyl group, or a substituted or unsubstituted C6 to C10 aryl group, wherein R b and R c , R d and R e , R f and R g , or R h and R i are independently present or are linked to each other to form a ring, and n of —(CR f R g ) n — is an integer of 1 or 2,

X a and X b are independently —O—, —S—, —Se—, —Te—, —NR p —, —SiR q R r — or —GeR s R t —, wherein R p , R q , R r , R s , and R t are independently hydrogen, a halogen, a substituted or unsubstituted C1 to C10 alkyl group, or a substituted or unsubstituted C6 to C10 aryl group,

Z 1 to Z 4 are independently N or CR x (wherein R x is hydrogen, a C1 to C6 alkyl group, a C1 to C10 haloalkyl group, —SiH 3 , a C1 to C10 alkylsilyl group, —NH 2 , a C1 to C10 alkylamine group, a C6 to C12 aryl group, a C3 to C12 heteroaryl group, a halogen, a cyano group, or a combination thereof).

6. The near-infrared absorber of claim 1 , wherein the near-infrared absorber has a peak absorption wavelength in a wavelength region of about 750 nm to about 3000 nm.

7. A near-infrared absorbing/blocking film comprising the near-infrared absorber of claim 1 .

8. A photoelectric device, comprising:

a first electrode and a second electrode facing each other; and

an active layer between the first electrode and the second electrode,

wherein the active layer includes the near-infrared absorber of claim 1 that includes the compound represented by Chemical Formula 1.

9. The photoelectric device of claim 8 , wherein in Chemical Formula 1, *—N(R 1 )(R 2 ) and *—N(R 3 )(R 4 ) are independently represented by Chemical Formula D-1 or Chemical Formula D-2:

wherein, in Chemical Formula D-1,

Ar 5 and Ar 6 are independently a substituted or unsubstituted C6 to C30 aryl group or a substituted or unsubstituted C3 to C30 heteroaryl group, and

* is a linking point with Chemical Formula 1,

wherein, in Chemical Formula D-2,

Ar 7 and Ar 8 are independently a substituted or unsubstituted C6 to C30 arene group or a substituted or unsubstituted C3 to C30 heteroarene group,

G is a single bond, —O—, —S—, —Se—, —Te—, —N═, —NR a —, —SiR b R c —, —GeR d R e —, —(CR f R g ) n —, or —(C(R h )═C(R i ))—, wherein R a , R b , R c , R d , R e , R f , R g , R h , and R i are independently hydrogen, a halogen, a substituted or unsubstituted C1 to C10 alkyl group, or a substituted or unsubstituted C6 to C10 aryl group, wherein R b and R c , R d and R e , R f and R g , or R h and R i are independently present or are linked to each other to form a ring, and n of —(CR f R g ) n — is an integer of 1 or 2, and

* is a linking point with Chemical Formula 1.

10. The photoelectric device of claim 8 , wherein the active layer further includes fullerene.

11. The photoelectric device of claim 8 , wherein the active layer has a peak absorption wavelength in a wavelength region of about 750 nm to about 3000 nm.

12. An organic sensor comprising the photoelectric device of claim 8 .

13. An electronic device comprising the organic sensor of claim 12 .

14. An electronic device comprising the photoelectric device of claim 8 .

15. A photoelectric device, comprising:

a first electrode and a second electrode facing each other;

an active layer between the first electrode and the second electrode; and

a charge auxiliary layer between

the active layer and the first electrode, or

the active layer and the second electrode,

wherein the charge auxiliary layer includes the near-infrared absorber of claim 1 that includes the compound represented by Chemical Formula 1.

16. The photoelectric device of claim 15 , wherein the active layer further includes the near-infrared absorber.

17. An organic sensor, comprising:

a semiconductor substrate;

a first photoelectric device on the semiconductor substrate, the first photoelectric device configured to selectively absorb light in a first near-infrared wavelength region; and

an additional sensor configured to selectively absorb light in a separate wavelength region that is different from the first near-infrared wavelength region,

wherein the first photoelectric device includes the near-infrared absorber of claim 1 that includes the compound represented by Chemical Formula 1.

18. The organic sensor of claim 17 , wherein

the additional sensor is an infrared light sensor at least partially embedded within the semiconductor substrate, and the separate wavelength region is a separate near-infrared wavelength region that is different from the first near-infrared wavelength region, and

the first photoelectric device and the infrared light sensor overlap in a vertical direction that is perpendicular to a top surface of the semiconductor substrate.

19. The organic sensor of claim 17 , wherein

the additional sensor includes a plurality of photodiodes at least partially embedded within the semiconductor substrate, the plurality of photodiodes configured to selectively absorb light in separate visible wavelength regions, and

the first photoelectric device and the plurality of photodiodes overlap in a vertical direction that is perpendicular to a top surface of the semiconductor substrate.

20. The organic sensor of claim 19 , further comprising:

an additional photoelectric device on the semiconductor substrate, the additional photoelectric device being between the first photoelectric device and the semiconductor substrate, the additional photoelectric device configured to selectively absorb light in an additional wavelength region that is different from the first near-infrared wavelength region and the separate visible wavelength regions.

21. The organic sensor of claim 17 , wherein

the additional sensor includes at least one additional photoelectric device vertically stacked between the first photoelectric device and the semiconductor substrate, each separate photoelectric device of the at least one additional photoelectric device including a separate photoelectric conversion layer and configured to selectively absorb light in a respective wavelength region that is different from the first near-infrared wavelength region.

22. The organic sensor of claim 17 , wherein the first photoelectric device includes

a first electrode and a second electrode facing each other; and

an active layer between the first electrode and the second electrode, wherein the active layer includes the near-infrared absorber.

23. The organic sensor of claim 17 , wherein the first photoelectric device includes

a first electrode and a second electrode facing each other;

an active layer between the first electrode and the second electrode; and

a charge auxiliary layer between

the active layer and the first electrode, or

the active layer and the second electrode,

wherein the charge auxiliary layer includes the near-infrared absorber.