Stacked die assembly
A sensor device comprising: a lead frame; a first/second semiconductor die having a first/second sensor structure at a first/second sensor location, and a plurality of first/second bond pads electrically connected to the lead frame; the semiconductor dies having a square or rectangular shape with a geometric center; the sensor locations are offset from the geometrical centers; the second die is stacked on top of the first die, and is rotated by a non-zero angle and optionally also offset or shifted with respect to the first die, such that a perpendicular projection of the first and second sensor location coincide.
1. A sensor device comprising:
a lead frame;
a first semiconductor die having a first rectangular shape with a first geometrical center, and being electrically connected to the lead frame, and comprising a first sensor structure situated at a first sensor location;
a second semiconductor die having a second rectangular shape equal to the first rectangular shape, and having a second geometrical center, and being electrically connected to the lead frame, and comprising a second sensor structure situated at a second sensor location;
wherein:
the first rectangular shape has a length defining a length direction, and a width defining a width direction perpendicular to the length direction, said length being equal to or larger than said width;
the first sensor location is offset from the first geometrical center by a first predetermined offset along the length direction, and by a second predetermined offset in the width direction;
at least one of the first and second predetermined offset is different from zero;
the second sensor location is offset from the second geometrical center;
the second semiconductor die is stacked on top of the first semiconductor die, and is rotated by 180° with respect to the first semiconductor die about an imaginary axis perpendicular to the lead frame; and
the second semiconductor die is shifted in the first direction by a first distance equal to twice the first predetermined offset and shifted in the second direction by a second distance equal to twice the second predetermined offset.
2. The sensor device according to claim 1 ,
wherein the first semiconductor die comprises a plurality of first bond pads wire-bonded to the lead frame; and
wherein the second semiconductor die comprises a plurality of second bond pads wire-bonded to the lead frame;
wherein the first wire bonds and the second wire bonds are situated on a same side of the lead frame.
3. The sensor device according to claim 1 , wherein the relative position of the first sensor location with respect to the first rectangular shape is identical to the relative position of the second sensor location with respect to the second semiconductor die.
4. The sensor device according to claim 1 , wherein the second semiconductor die has a layout identical to that of the first semiconductor die.
5. The sensor device according to claim 1 , wherein one of the first and second predetermined offset is equal to zero, and the other of the first and second predetermined offset is different from zero.
6. The sensor device according to claim 1 , wherein each of the first and second predetermined offset is different from zero.
7. The sensor device according to claim 1 ,
wherein each of said first and second semiconductor die has an active side and a passive side, and
wherein the active side of the first semiconductor die is oriented in the same direction as the active side of the second semiconductor die.
8. The sensor device according to claim 1 , wherein the second semiconductor die is stacked on top of the first semiconductor die, without a spacer or interposer.
9. The sensor device according to claim 1 , wherein the first sensor structure on the first semiconductor die is identical to the second sensor structure on the second semiconductor die.
10. The sensor device according to claim 1 , wherein the first sensor structure on the first semiconductor die is different from the second sensor structure on the second semiconductor die.
11. The sensor device according to claim 1 , wherein the first sensor structure and the second sensor structure are magnetic sensor structures.
12. The sensor device according to claim 1 , wherein the first semiconductor die is situated between the second semiconductor die and the lead frame.
13. The sensor device according to claim 1 , wherein the sensor device comprises only two semiconductor dies, namely said first semiconductor die and said second semiconductor die.
14. The sensor device according to claim 1 , wherein the first semiconductor die and the second semiconductor die overlap by at least 60%.
15. The sensor device according to claim 11 , wherein each of the first and second semiconductor die is configured for providing a linear or an angular position based on magnetic field gradients.
16. A sensor system comprising:
a magnetic sensor device according to claim 11 ; and
a magnetic source arranged in the vicinity of the magnetic sensor device.
17. The sensor system according to claim 16 , wherein said magnetic source comprises at least one permanent magnet.
18. A sensor device comprising:
a lead frame;
a first semiconductor die having a first rectangular shape with a first geometrical center, and being electrically connected to the lead frame, and comprising a first sensor structure situated at a first sensor location;
a second semiconductor die having a second rectangular shape equal to the first rectangular shape, and having a second geometrical center, and being electrically connected to the lead frame, and comprising a second sensor structure situated at a second sensor location;
wherein:
the first rectangular shape has a length defining a length direction, and a width defining a width direction perpendicular to the length direction, said length being equal to or larger than said width;
the first sensor location is offset from the first geometrical center by a first predetermined offset along the length direction, and by a second predetermined offset in the width direction;
at least one of the first and second predetermined offset is different from zero;
the second sensor location is offset from the second geometrical center; and
the second semiconductor die is stacked on top of the first semiconductor die, and is rotated by 90° with respect to the first semiconductor die about an imaginary axis perpendicular to the lead frame.
19. The sensor device according to claim 18 , wherein one of the first and second predetermined offset is equal to zero, and the other of the first and second predetermined offset is different from zero.
20. The sensor device according to claim 18 , wherein each of the first and second predetermined offset is different from zero.
21. The sensor device according to claim 18 , wherein the first semiconductor die and the second semiconductor die overlap by at least 60%.
22. The sensor device according to claim 18 , wherein the first semiconductor die comprises a plurality of first bond pads wire-bonded to the lead frame; and
wherein the second semiconductor die comprises a plurality of second bond pads wire-bonded to the lead frame; and
wherein the first wire bonds and the second wire bonds are situated on a same side of the lead frame.
23. A sensor device comprising:
a lead frame;
a first semiconductor die having a first rectangular shape with a first geometrical center, and being electrically connected to the lead frame, and comprising a first sensor structure situated at a first sensor location;
a second semiconductor die having a second rectangular shape equal to the first rectangular shape, and having a second geometrical center, and being electrically connected to the lead frame, and comprising a second sensor structure situated at a second sensor location;
wherein:
the first sensor location is offset from the first geometrical center;
the second sensor location is offset from the second geometrical center; and
the second semiconductor die is stacked on top of the first semiconductor die, and is rotated by an angle in a range from 10° to 85° with respect to the first semiconductor die about an imaginary axis perpendicular to the lead frame.
24. The sensor device according to claim 23 , wherein one of the first and second predetermined offset is equal to zero, and the other of the first and second predetermined offset is different from zero.
25. The sensor device according to claim 23 , wherein each of the first and second predetermined offset is different from zero.
26. The sensor device according to claim 23 , wherein the first semiconductor die and the second semiconductor die overlap by at least 60%.
27. The sensor device according to claim 23 , wherein the first semiconductor die comprises a plurality of first bond pads wire-bonded to the lead frame; and
wherein the second semiconductor die comprises a plurality of second bond pads wire-bonded to the lead frame; and
wherein the first wire bonds and the second wire bonds are situated on a same side of the lead frame.