PECVD deposition system for deposition on selective side of the substrate
A plasma processing system is provided. The system includes a chamber, a controller and a showerhead disposed in the chamber. A first gas manifold is connected to the showerhead for providing a first gas from a first gas source responsive to control from the controller. A shower-pedestal is disposed in the chamber and oriented opposite the showerhead. A second gas manifold is connected to the shower-pedestal for providing a second gas from a second gas source responsive to control from the controller. A substrate support for holding a substrate at a spaced apart relationship from the shower-pedestal is provided. A radio frequency (RF) power supply for providing power to the showerhead to generate a plasma is provided. The plasma is used for depositing a film on a back-side of the substrate, when present in the chamber. The substrate is held by the substrate support in the spaced apart relationship from the shower-pedestal, during backside deposition. The showerhead provides a purge gas during the backside deposition.
1. A shower-pedestal for supplying processing gases to an underside of a wafer during semiconductor processing operations, the shower-pedestal comprising:
a top surface;
an enclosed plenum region located within the shower-pedestal;
a plurality of orifices arranged on the top surface and connected to the enclosed plenum region; and
a plurality of spacers, the spacers extending away from the top surface and configured to support a carrier ring thereover, wherein each spacer has a spacer top surface having a corresponding recessed region, each recessed region configured to receive a corresponding support extension projecting from the carrier ring that the spacers are configured to receive.
2. The shower-pedestal of claim 1 , wherein:
the orifices are arranged in a first hole pattern in an interior area of the top surface and in a second hole pattern that encircles the interior area, and
the orifices in the first hole pattern extend along directions perpendicular to the top surface.
3. The shower-pedestal of claim 2 , wherein the orifices in the second hole pattern extend along non-perpendicular angles relative to the top surface.
4. The shower-pedestal of claim 1 , further comprising a gas entry path that leads to a baffle located within the enclosed plenum region.
5. The shower-pedestal of claim 4 , wherein the orifices are distributed across an interior region of the top surface.
6. The shower-pedestal of claim 1 , wherein the orifices are arranged in a plurality of concentric circular rings centered on a center of the shower-pedestal and extending to an outer region of the shower-pedestal.
7. The shower-pedestal of claim 6 , wherein at least an outer ring of the orifices includes a plurality of angled orifices that are tilted away from perpendicular to the top surface and in a direction away from the center of the shower-pedestal.
8. The shower-pedestal of claim 1 , wherein there are three spacers.
9. The shower-pedestal of claim 8 , wherein the spacers each have one or more support surfaces configured to mate with support extensions on a carrier ring that the spacers are configured to support.
10. The shower-pedestal of claim 1 , wherein the shower-pedestal further includes a plurality of lift pin holes, each lift pin hole configured to allow a corresponding lift pin to pass therethrough.
11. The shower-pedestal of claim 1 , further comprising a plurality of lift pins, each lift pin configured to extend through a corresponding hole in the shower-pedestal.