High performance MOSFETs having varying channel structures
The present disclosure describes a method for the formation of gate-all-around nano-sheet FETs with tunable performance. The method includes disposing a first and a second vertical structure with different widths over a substrate, where the first and the second vertical structures have a top portion comprising a multilayer nano-sheet stack with alternating first and second nano-sheet layers. The method also includes disposing a sacrificial gate structure over the top portion of the first and second vertical structures; depositing an isolation layer over the first and second vertical structures so that the isolation layer surrounds a sidewall of the sacrificial gate structure; etching the sacrificial gate structure to expose each multilayer nano-sheet stack from the first and second vertical structures; removing the second nano-sheet layers from each exposed multilayer nano-sheet stack to form suspended first nano-sheet layers; forming a metal gate structure to surround the suspended first nano-sheet layers.
1. A semiconductor structure, comprising:
a fin over a substrate;
a first vertical structure over the substrate, wherein the first vertical structure comprises:
a first portion with alternating first and second nano-sheet layers; and
a second portion with the second nano-sheet layers, wherein the second nano-sheet layers from the first portion extend through the second portion; and
a gate structure over a portion of the fin and over the second portion of the first vertical structure, wherein the gate structure surrounds the second nano-sheet layers of the second portion of the first vertical structure and a top and a side portion of the fin, wherein a height of the gate structure over the portion of the fin is different from a height of the gate structure over the second portion of the first vertical structure, wherein a first portion of the gate structure adjacent the fin has a first bottom surface level with a second bottom surface of a second portion of the gate structure adjacent the first vertical structure.
2. The semiconductor structure of claim 1 , further comprising:
a source/drain epitaxial stack on the first portion of the first vertical structure and adjacent the gate structure; and
another source/drain epitaxial stack on the fin and adjacent to the gate structure.
3. The semiconductor structure of claim 1 , wherein a width of the first vertical structure is equal to or wider than a width of the fin.
4. The semiconductor structure of claim 3 , wherein the width of the first vertical structure is equal to a width of the second nano-sheet layers and ranges from about 4 nm to about 50 nm.
5. The semiconductor structure of claim 4 , further comprising:
another vertical structure over the substrate, wherein the another vertical structure comprises:
a first portion with the alternating first and second nano-sheet layers; and
a second portion with the second nano-sheet layers of the another vertical structure, wherein a width of second nano-sheet layers of the another vertical structure is different from the width of the second nano-sheet layers of the first vertical structure.
6. The semiconductor structure of claim 1 , wherein a pitch of the first nano-sheet layers is based on a thickness of the second nano-sheet layers, and wherein a pitch of the second nano-sheet layers is based on a thickness of the first nano-sheet layers.
7. The semiconductor structure of claim 1 , wherein the first nano-sheet layers comprise silicon-germanium and the second nano-sheet layers comprise silicon.
8. The semiconductor structure of claim 1 , wherein the first nano-sheet layers comprise silicon and the second nano-sheet layers comprise silicon-germanium.
9. The semiconductor structure of claim 1 , wherein the first and second nano-sheet layers comprise different epitaxially grown materials.
10. The semiconductor structure of claim 1 , wherein a top surface of the first and second nano-sheet layers are parallel to a ( 100 ) crystal plane.
11. A semiconductor structure comprising:
a first vertical structure over a substrate, wherein the first vertical structure comprises:
a first portion with alternating first and second nano-sheet layers; and
a second portion without the first nano-sheet layers and with a different number of second nano-sheet layers from the first portion;
a fin over the substrate;
a first gate structure surrounding top, bottom, and side surfaces of each of the second nano-sheet layers of the second portion of the first vertical structure; and
a second gate structure surrounding a portion of the fin, wherein the second gate structure is taller than the first gate structure, wherein a lower surface of the first gate structure is level with a lower surface of the second gate structure.
12. The semiconductor structure of claim 11 , further comprising:
a source/drain epitaxial stack on the first portion of the first vertical structure and adjacent to the first gate structure; and
another source/drain epitaxial stack on the fin and adjacent to the second gate structure.
13. The semiconductor structure of claim 11 , further comprising:
another vertical structure over the substrate, wherein the another vertical structure comprises:
a first portion with the alternating first and second nano-sheet layers; and
a second portion without the first nano-sheet layers and with an equal number of second nano-sheet layers as the first portion; and
a third gate structure surrounding each of the second nano-sheet layers of the second portion of the another vertical structure, wherein the third gate structure is taller than the first gate structure.
14. The semiconductor structure of claim 13 , wherein a width of the another vertical structure is equal to a width of the first vertical structure.
15. The semiconductor structure of claim 13 , wherein a width of the another vertical structure is different from a width of the first vertical structure.
16. The semiconductor structure of claim 13 , wherein the second portion of the first vertical structure has fewer second nano-sheet layers than the second portion of the another vertical structure.
17. The semiconductor structure of claim 11 , wherein the first nano-sheet layers comprise silicon and the second nano-sheet layers comprise silicon-germanium.
18. The semiconductor structure of claim 11 , wherein each of the first and second nano-sheet layers have a thickness that ranges from about 5 nm to about 20 nm.
19. A semiconductor structure comprising:
a vertical structure over a substrate, wherein the vertical structure comprises:
a channel region having a plurality of first nano-structure layers; and
a source/drain region, wherein at least some of the plurality of first nano-structures layers extends into the source/drain region;
a fin over the substrate;
a first gate structure surrounding top, bottom, and side surfaces of each of the plurality of first nano-structure layers of the channel region of the vertical structure; and
a second gate structure surrounding a portion of the fin, wherein a height of the second gate structure is different from a height of the first gate structure, wherein a bottom of the first gate structure is level with a bottom of the second gate structure.
20. The semiconductor structure of claim 19 , wherein the source/drain region comprises a different number of the plurality of first nano-structure layers than the channel region.