Semiconductor device including metal insulator metal capacitor and method of making
A semiconductor device includes a substrate. The semiconductor device further includes a circuit layer over the substrate. The semiconductor device further includes a test line electrically connected to the circuit layer. The semiconductor device further includes a capacitor on the substrate. The capacitor includes a first conductor, wherein the first conductor is on a portion of the substrate exposed by the circuit layer. The capacitor further includes an insulator surrounding the first conductor.
1. A semiconductor device, comprising:
a substrate;
a circuit layer over the substrate;
a test line electrically connected to the circuit layer; and
a capacitor on the substrate, the capacitor comprising:
a first conductor, wherein the first conductor is on a portion of the substrate exposed by the circuit layer; and
an insulator surrounding the first conductor.
2. The semiconductor device of claim 1 , wherein the insulator further surrounds the test line.
3. The semiconductor device of claim 1 , wherein the capacitor further comprises a second conductor, and the insulator is between the first conductor and the second conductor.
4. The semiconductor device of claim 3 , wherein the first conductor is between the circuit layer and the second conductor.
5. The semiconductor device of claim 3 , wherein the second conductor is on the portion of the substrate exposed by the circuit layer.
6. The semiconductor device of claim 1 , wherein the test line directly connects to the circuit layer.
7. The semiconductor device of claim 1 , further comprising a via electrically connecting the test line to the circuit layer.
8. The semiconductor device of claim 1 , wherein the circuit layer is electrically connected to the capacitor.
9. The semiconductor device of claim 8 , wherein the circuit layer comprises a memory device electrically connected to the capacitor.
10. The semiconductor device of claim 1 , wherein the test line has a serpentine shape.
11. A semiconductor device, comprising:
a substrate;
a circuit layer over the substrate;
a test line electrically connected to the circuit layer; and
a capacitor, wherein an entirety of the capacitor is on a portion of the substrate exposed by the circuit layer, the capacitor comprising:
a first conductor;
a second conductor; and
an insulator between the first conductor and the second conductor.
12. The semiconductor device of claim 11 , wherein the circuit layer is electrically connected to the capacitor.
13. The semiconductor device of claim 11 , wherein the insulator is between the capacitor and the test line.
14. The semiconductor device of claim 11 , wherein a height of the first conductor from a top surface of the insulator to the substrate is greater than a height of the test line from the top surface of the insulator to the circuit layer.
15. The semiconductor device of claim 11 , wherein the second conductor is between the first conductor and the circuit layer.
16. The semiconductor device of claim 11 , wherein the test line comprises a same material as at least one of the first conductor or the second conductor.
17. A semiconductor device, comprising:
a substrate;
a circuit layer over the substrate;
a test line electrically connected to the circuit layer; and
a capacitor on the substrate, the capacitor comprising:
a first conductor, wherein the first conductor is on a first portion of the substrate exposed by the circuit layer;
a second conductor, wherein the second conductor is on a second portion of the substrate exposed by the circuit layer; and
an insulator between the first conductor and the second conductor.
18. The semiconductor device of claim 17 , wherein the insulator is between the first conductor and the test line.
19. The semiconductor device of claim 17 , wherein the insulator surrounds the first conductor and surrounds the second conductor.
20. The semiconductor device of claim 17 , wherein a top-most surface of the test line is coplanar with a top-most surface of the insulator.