Low-k gate spacer and methods for forming the same
Embodiments of the present disclosure relate to a FinFET device having gate spacers with reduced capacitance and methods for forming the FinFET device. Particularly, the FinFET device according to the present disclosure includes gate spacers formed by two or more depositions. The gate spacers are formed by depositing first and second materials at different times of processing to reduce parasitic capacitance between gate structures and contacts introduced after epitaxy growth of source/drain regions.
1. A method of forming a semiconductor device, the method comprising:
forming a first dielectric layer over a fin structure and a dummy gate stack, the dummy gate stack being over the fin structure;
depositing a sacrificial layer over the first dielectric layer;
performing an etch process to expose portions of the fin structure while sidewalls of the dummy gate stack remain covered by the sacrificial layer and the first dielectric layer;
growing source/drain regions from the exposed portions of the fin structure;
removing the sacrificial layer to expose the first dielectric layer adjacent the dummy gate stack;
after removing the sacrificial layer, forming a third dielectric layer on the first dielectric layer, wherein the third dielectric layer directly contacts the first dielectric layer;
removing the third dielectric layer; and
after removing the third dielectric layer, depositing a second dielectric layer on the first dielectric layer.
2. The method of claim 1 , wherein the second dielectric layer comprises a low-k dielectric.
3. The method of claim 2 , wherein the second dielectric layer has a thickness in a range from 20 angstroms to 40 angstroms.
4. The method of claim 2 , wherein the second dielectric layer includes pores having a median radius in a range from 0.4 nm to 0.43 nm.
5. The method of claim 2 , wherein the second dielectric layer is a porous film having a porosity in a range from 2.00% to 3.50%.
6. The method of claim 1 , wherein depositing a sacrificial layer comprises using a conformal deposition process.
7. The method of claim 1 , wherein removing the sacrificial layer is performed after growing the source/drain regions.
8. The method of claim 1 , wherein a portion of the first dielectric layer remains adjacent the source/drain regions.
9. A method of forming a semiconductor device, the method comprising:
forming a first dummy gate over a first fin structure and a second dummy gate over a second fin structure;
forming a first spacer layer over the first dummy gate, the first fin structure, the second dummy gate, and the second fin structure;
forming a first sacrificial layer over the first spacer layer;
removing portions of the first sacrificial layer and the first spacer layer to expose the first fin structure;
forming first source/drain regions on the first fin structure;
removing the first sacrificial layer;
forming a second sacrificial layer over the first spacer layer, the second dummy gate, and the second fin structure;
removing portions of the second sacrificial layer and the first spacer layer to expose the second fin structure, wherein, after removing portions of the second sacrificial layer and the first spacer layer to expose the second fin structure, portions of the first spacer layer remain along sidewalls of the second fin structure to form spacer portions; and
forming second source/drain regions on the second fin structure.
10. The method of claim 9 , further comprising:
removing the second sacrificial layer; and
forming a second spacer layer over the first spacer layer, wherein the second spacer layer has a lower dielectric constant than the first sacrificial layer and the second sacrificial layer.
11. The method of claim 10 , wherein the second spacer layer is a low-k dielectric layer.
12. The method of claim 10 , further comprising forming an etch stop layer over the second spacer layer.
13. The method of claim 12 , wherein forming the second spacer layer comprises forming the second spacer layer over the first source/drain regions, wherein the second spacer layer is interposed between the etch stop layer and the first source/drain regions.
14. The method of claim 13 , wherein forming the second spacer layer comprises forming the second spacer layer over the second source/drain regions, wherein the second spacer layer is interposed between the etch stop layer and the second source/drain regions.
15. The method of claim 14 , wherein the second spacer layer is porous.
16. A semiconductor device comprising:
a first transistor on a substrate, the first transistor comprising:
a first epitaxial source/drain region over a first fin;
a first gate structure adjacent the first epitaxial source/drain region, wherein the first gate structure includes:
a first high-k dielectric layer over the first fin; and
a first gate electrode over the first high-k dielectric layer;
a first gate spacer along a sidewall of the first gate structure; and
a second gate spacer along a sidewall of the first gate spacer and over the first epitaxial source/drain region, wherein the first gate spacer is disposed between the first gate structure and the second gate spacer; and
a second transistor on the substrate, the second transistor comprising:
a second epitaxial source/drain region over a second fin, the second epitaxial source/drain region having a smaller cross-sectional area than the first epitaxial source/drain region;
a second gate structure adjacent the second epitaxial source/drain region, wherein the second gate structure includes:
a second high-k dielectric layer over the second fin; and
a second gate electrode over the second high-k dielectric layer;
a third gate spacer along a sidewall of the second gate structure;
a fourth gate spacer along a sidewall of the second gate spacer and over the second epitaxial source/drain region, wherein the third gate spacer is disposed between the second gate structure and the fourth gate spacer; and
spacer portions along opposing sidewalls of the second epitaxial source/drain region, wherein the spacer portions, the first gate spacer, and the third gate spacer are formed of a same material, wherein the first epitaxial source/drain region is free of the spacer portions.
17. The semiconductor device of claim 16 , wherein a thickness of the second gate spacer is 40% to 70% of a total thickness of the first gate spacer and the second gate spacer.
18. The semiconductor device of claim 16 , wherein the second gate spacer and the fourth gate spacer are formed of a same low-k dielectric layer.
19. The semiconductor device of claim 18 , further comprising:
a first dielectric layer over the first epitaxial source/drain region; and
a second dielectric layer over the second epitaxial source/drain region, wherein the first dielectric layer, the second dielectric layer, the second gate spacer, and the fourth gate spacer are formed of the same low-k dielectric layer.
20. The semiconductor device of claim 19 , further comprising an etch stop layer over the second gate spacer, the fourth gate spacer, the first dielectric layer, and the second dielectric layer.